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SILICON CARBIDE CERAMIC

Foreign code F200010082
File No. 5855
Posted date May 15, 2020
Country WIPO
International application number 2018JP018601
International publication number WO 2018212139
Date of international filing May 14, 2018
Date of international publication Nov 22, 2018
Priority data
  • P2017-096885 (May 15, 2017) JP
Title SILICON CARBIDE CERAMIC
Abstract The purpose of the present invention is to provide a SiC ceramic which has an excellent environmentally-resistant coating. The SiC ceramic contains a metal oxide, and is characterized by containing a surface-modified layer containing a silicate, wherein the surface-modified layer is derived from a SiC-ceramic forming raw material which is a base material.
Outline of related art and contending technology BACKGROUND ART
Silicon carbide (hereinafter also referred to as' SiC '.) A ceramic material (hereinafter 'SiC ceramic material' is also referred to.) Is, the weight, heat resistance (high temperature strength), the abrasion resistance (high hardness), chemical stability (oxidation resistance, corrosion resistance), high thermal conductivity, low thermal expansion coefficient, low-induced emission, has excellent physical properties such as low thermal decay. SiC ceramic material in the aerospace field to the engine and is used, SiC ceramic material is used to develop the aircraft aircraft material has been promoted. Nuclear field, for the purpose to reduce the risk of hydrogen explosion, and the like of the fuel rod cladding tube is applied to the SiC ceramic material has been studied.
Conventional, on the ceramic substrate, a rare earth nitrate hydrate and tetraethoxysilane used as starting material of sol-gel film formed by the, the coated film by heat treatment, a rare earth silicate film has been disclosed a technique for forming (Patent Document 1). In Patent Document 1, the ceramic substrate for forming a film on the sol-gel method is employed, the actual silicon nitride ceramic as the ceramic substrate is only disclosed. However, disclosed in Patent Document 1 sol-gel method a film formation technique, or a general film formation technique or the like by plasma spray, a sufficiently dense film cannot be formed, the coating film formed of the ceramic base plate (base material) is not high and the adhesion and, as a result, peeling of the coating, are lost to the environment has been a problem.
Then, the technique of Patent Document 1, silicon carbide ceramic substrate after being formed, the rare-earth nitrate hydrate the surface of the substrate and starting the commodity by a sol-gel method of tetraethoxysilane, water vapor from the group consisting of rare-earth silicate is formed on the corrosion film. In this technique, a release film such as water vapor corrosion in the case where the damage has occurred, again, such as a sol-gel method is applied to the damaged portion, a rare earth silicate as a raw material of the rare earth metal components supplied from the outside unless, self-healing of the film to water vapor corrosion cannot be expected.
The inventors of the present invention, so far, and the SiC phase, the phase of a material having low reactivity with respect to SiC the matrix of the multi-phase structure, is arranged in the matrix of the fiber reinforced composite material comprising SiC SiC SiC fibers (hereinafter 'SiC/SiC composite material' is also referred to.) (Patent Document 2) are developed.
The SiC/SiC composite material, and SiC of the SiC ceramic fiber composite by improving the toughness and, moreover, even under high-temperature oxidizing atmosphere to suppress oxidation by the formation of the oxide film of the silica can have an excellent durability. The SiC/SiC composite materials may be used, such as high-temperature water vapor in the environment and reacting with the silica, it is possible to maintain durability there was studied.
Scope of claims (In Japanese)[請求項1]
 金属酸化物を含有する炭化ケイ素セラミックスであって、
 ケイ酸塩を含む表面改質層を含み、
 当該表面改質層が母材である炭化ケイ素セラミックスの形成原料に由来する、
ことを特徴とする炭化ケイ素セラミックス。

[請求項2]
 前記表面改質層が、ケイ酸塩を50重量%以上含む、請求項1に記載の炭化ケイ素セラミックス。

[請求項3]
 前記ケイ酸塩を含む表面改質層が、前記母材である炭化ケイ素セラミックス表面付近に生成されている、請求項1又は2に記載の炭化ケイ素セラミックス。

[請求項4]
 前記金属酸化物が、酸化スカンジウム(Sc 2O 3)、酸化イットリウム(Y 2O 3)、酸化エリビウム(Er 2O 3)、酸化イッテルビウム(Yb 2O 3)、アルミナ(Al 2O 3)及び酸化ルテチウム(Lu 2O 3)からなる群から選ばれた少なくとも一種の金属酸化物である、請求項1~3のいずれかに記載の炭化ケイ素セラミックス。

[請求項5]
 前記ケイ酸塩が、スカンジウムシリケート(Sc 2Si 2O 7)、イットリウムシリケート(Y 2SiO 5)、エリビウムシリケート(ErSiO 5)、イッテルビウムシリケート(Yb 2SiO 5)、イッテルビウムシリケート(Yb 2Si 2O 7)、ケイ酸アルミニウム(Al 2SiO 5)及びルテチウムシリケート(LuSiO 5)からなる群から選ばれた少なくとも一種のケイ酸塩である、請求項1~4のいずれかに記載の炭化ケイ素セラミックス。

[請求項6]
 炭化ケイ素セラミックスを製造する方法であって、
 (1)分散媒中で炭化ケイ素形成原料、及び金属酸化物を分散する工程、
 (2)工程(1)で得られた分散物を焼結する工程、
 (3)工程(2)で得られた焼結物を熱処理して、母材である炭化ケイ素セラミックスにケイ酸塩を含む表面改質層を形成させる工程、
を含むことを特徴とする方法。

[請求項7]
 前記表面改質層が、ケイ酸塩を50重量%以上含む、請求項6に記載の方法。

[請求項8]
 前記工程(3)が、工程(2)で得られた焼結物を熱処理して、母材である炭化ケイ素セラミックスの表面付近にケイ酸塩を含む表面改質層を形成させる工程である、請求項7又は8に記載の方法。

[請求項9]
 前記金属酸化物が、酸化スカンジウム(Sc 2O 3)、酸化イットリウム(Y 2O 3)、酸化エリビウム(Er 2O 3)、酸化イッテルビウム(Yb 2O 3)、アルミナ(Al 2O 3)及び酸化ルテチウム(Lu 2O 3)からなる群から選ばれた少なくとも一種の酸化物である、請求項6~8のいずれかに記載の方法。

[請求項10]
 前記ケイ酸塩が、スカンジウムシリケート(Sc 2Si 2O 7)、イットリウムシリケート(Y 2SiO 5)、エリビウムシリケート(ErSiO 5)、イッテルビウムシリケート(Yb 2SiO 5)、イッテルビウムシリケート(Yb 2Si 2O 7)、ケイ酸アルミニウム(Al 2SiO 5)及びルテチウムシリケート(LuSiO 5)からなる群から選ばれた少なくとも一種のケイ酸塩である、請求項6~9のいずれかに記載の方法。

[請求項11]
 請求項1~5のいずれかに記載の炭化ケイ素セラミックスを母材とし、セラミックス繊維を含むことを特徴とするセラミックス繊維強化炭化ケイ素複合材料。

[請求項12]
 前記セラミックス繊維が、炭化ケイ素繊維、アルミナ繊維及び炭素繊維からなる群から選ばれた少なくとも一種のセラミックス繊維である、請求項11記載のセラミックス繊維強化炭化ケイ素複合材料。
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • KYOTO UNIVERSITY
  • Inventor
  • HINOKI, Tatsuya
  • YANAGAWA, Shohei
IPC(International Patent Classification)
Specified countries National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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