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Crystal, crystalline film, semiconductor device including crystalline film, and method for producing crystalline film

外国特許コード F200010117
整理番号 5927
掲載日 2020年5月18日
出願国 中華人民共和国
出願番号 201810954980
公報番号 109423691
出願日 平成30年8月21日(2018.8.21)
公報発行日 平成31年3月5日(2019.3.5)
優先権データ
  • 特願2017-158308 (2017.8.21) JP
  • 特願2018-050517 (2018.3.19) JP
発明の名称 (英語) Crystal, crystalline film, semiconductor device including crystalline film, and method for producing crystalline film
発明の概要(英語) According to an aspect of a present inventive subject matter, a crystal includes: a corundum-structured oxide semiconductor as a major component, the corundum-structured oxide semiconductor includinggallium and/or indium and doped with a dopant including germanium; a principal plane; a carrier concentration that is 1x1018/cm3 or more; and an electron mobility that is 20 cm2/Vs or more.
従来技術、競合技術の概要(英語) BACKGROUND ART
By way of background, it is known that gallium oxide (Ga2O3) has five different polymorphs, including α-phase, β-phase, γ-phase, δ-phase andphase (see NPL1: Rustum Roy et al., "Polymorphism of Ga2O3and the System Ga2O3-H2O"). In this five polymorphic forms, β-Ga2O3is considered to be the most thermodynamically stable, and the α-Ga2O3is considered to be a meta-stable. Gallium oxide (Ga2O3) exhibit a wide band gap and as potential of the semiconductor device of the semiconductor material is drawn more attention.
According to NPL 2, suggest a gallium oxide (Ga2O3) with indium and/or aluminum can be formed through the band gap of a mixed crystal to control (see NPL 2: Kentaro KANEKO, "Fabrication and physical properties of corundum-structured alloys based on gallium oxide", papers, Kyoto University, March 2013, summary and open to the public content in 31 January 2014). Wherein, by InXAlYGaZO3(0≤ X ≤ 2,0 ≤ Y ≤ 2,0 ≤ Z ≤ 2, X + Y + Z=1.5 to 2.5) InAlGaO-based semiconductor is indicated by very attractive material (see PCT International Publication No. WO2014/050793A1)..
However, since the β phase is gallium oxide has a stable phase, without the use of suitable film-forming method and are difficult to form a metastable corundum structure in the case of a crystal film of gallium oxide. Moreover, by a melt growth substrate cannot be used to corundum structure obtained by the block and the meta-stable α-Ga2O3. Thus, having the corundum structure α-Ga2O3the same structure of the sapphire substrate is used for on the sapphire substrate to form a α-Ga2O3,however, sapphire and α-Ga2O3lattice mismatch of not less (Δ a/a-4.5%, Δ c/c-3.3%), therefore, hetero-epitaxially grown on a sapphire substrate of the α-Ga2O3crystalline films tend to include a high density of dislocations. In addition, there is also accelerate the deposition rate, improve the α-phase and a crystalline film of gallium oxide/or α-phase crystal film of the mass of a mixed crystal of gallium oxide, to suppress crystal defects (including the occurrence of cracks, abnormal growth, and a twin crystal/or bending of a crystalline film) of a further challenge. In such a case, a crystalline semiconductor film is carried out without interruption of the corundum structure studies.
Disclosed is a bromide or iodide and/or indium gallium or through use of an chemical vapor deposition (CVD) an oxide crystal film is produced (see Japanese Patent Laid-Open No. 5397794). Furthermore, there is disclosed a multi-layered structure include a sapphire structure of corundum structure on a substrate having an insulating layer of the semiconductor layer and the corundum structure (see Japanese Patent Laid-Open No. 5343224 and publications 5397795 and Unexamined Japanese Patent Publication No. JP2014-72533). In addition, discloses the use of ELO substrate through CVD and forming the voids is deposited atomized (see Unexamined Japanese Patent Publication No. 2016-100592, Publication No. 2016-98166, Publication No. 2016-100593 and publications 2016-155714). Furthermore, there is disclosed through a halide vapor phase epitaxy (HVPE) method to form a corundum structure of a gallium oxide film. However, there is room for improvement in the film-forming rate or speed, and the need for a manufacturing method of a crystalline film with sufficient speed.
Moreover, in view of the α-Ga2O3is metastable, and a stabilized β-Ga2O3compared to a case, in the inhibition of the defect density in the more difficult to create α-Ga2O3film and those containing gallium and one or more metals from crystalline films of crystalline metal oxide. Therefore, in order to obtain α-Ga2O3film and those containing gallium and one or more metals from crystalline films of crystalline metal oxide, there are still various deal with the challenge.
特許請求の範囲(英語) [claim1]
1. A single crystal, comprising:
Corundum structure as a main component an oxide semiconductor, gallium and indium oxide of corundum structure doped with germanium-containing semiconductor comprises a dopant/or;
The main plane;
1X1018/cm3or a higher carrier concentration; and
20 Cm2/Vsor higher electron mobility.

[claim2]
2. The crystal according to claim 1, wherein,
A main crystal plane is the c-plane.

[claim3]
3. The crystal according to claim 1, wherein,
A main crystal plane is m-plane.

[claim4]
4. The crystal according to claim 1, wherein,
A main crystal plane including off angle.

[claim5]
5. The crystal according to claim 1, wherein,
Corundum structure including an oxide semiconductor mixed crystal, and one or more selected from a mixed crystal comprising gallium aluminum, indium, iron, chromium, vanadium, titanium, rhodium, nickel, cobalt and iridium metal.

[claim6]
6. The crystal according to claim 1, wherein,
Crystal as the crystal silicon film having a film shape.

[claim7]
7. The crystal according to claim 5, wherein is included in the corundum structure mixed crystal of an oxide semiconductor including 1x1017/cm3or more aluminum.

[claim8]
8. One crystalline silicon film, comprising:
An oxide semiconductor as a main component, oxide semiconductor including 1x1017/cm3or more aluminum;
1X1018/cm3or a higher carrier concentration; and
20 Cm2/Vsor higher electron mobility.

[claim9]
9. A crystalline film according to claim 8, wherein,
The oxide semiconductor comprises gallium.

[claim10]
10. A crystalline film according to claim 8, wherein,
Oxide semiconductor comprises a mixed crystal.

[claim11]
11. A semiconductor device, comprising:
Claim 6 as crystals;
Of the 1st electrode is electrically connected to the crystal; and
2nd electrode which is electrically connected to the crystal.

[claim12]
12. A semiconductor device, comprising:
Claim 8 such as a room;
Is electrically connected with the crystalline film of the 1st electrode; and
2nd electrode which is electrically connected with the crystalline film.

[claim13]
13. A method for manufacturing method of a crystalline film, comprising:
Vaporized metal source to be converted to a metal-containing raw material gas metal source;
The metal-containing raw material gas, an oxygen-containing raw material gas into the reaction chamber to the substrate;
The hydrogen-containing dopant raw material gas and reaction gas is supplied into the reaction chamber to the substrate; and
At a dopant-containing raw material gas and reactive gas stream to form a crystalline film.

[claim14]
14. Method according to claim 13, wherein,
A dopant-containing raw material gas comprises germanium.

[claim15]
15. Method according to claim 14, wherein,
A dopant-containing raw material gas is germanium halides gas.

[claim16]
16. Method according to claim 13, wherein
Reaction gas is an etching gas.

[claim17]
17. Method according to claim 13, wherein,
Reaction gas comprising hydrogen halide and halogen and hydrogen selected from the group including at least one of the groups.

[claim18]
18. Method according to claim 13, wherein,
Reaction gases include hydrogen halides.

[claim19]
19. Method according to claim 13, wherein,
Substrates include a sapphire structure.

[claim20]
20. Method according to claim 13, wherein,
The crystal silicon film having a corundum structure.

[claim21]
21. Method according to claim 13, wherein the temperature in the range of 700 °C to 400 °C for a substrate heat.

[claim22]
22. Method according to claim 13, wherein,
A source of metal comprises gallium, and the metal-containing raw material gas comprises gallium.

[claim23]
23. Method according to claim 13, wherein,
Through metal halide source for the gasification of the metal source.

[claim24]
24. Method according to claim 13, wherein,
An oxygen-containing source gas selected from the group comprising oxygen (O2), water (H2O) and a nitrous oxide (N2O) least one.
  • 出願人(英語)
  • FLOSFIA INC.
  • NATIONAL INSTITUTE FOR MATERIALS SCIENCE
  • KYOTO UNIVERSITY
  • SAGA UNIVERSITY
  • 発明者(英語)
  • OSHIMA YUICHI
  • FUJITA SHIZUO
  • KANEKO, KENTARO
  • KASU MAKOTO
  • KAWARA KATSUAKI
  • SHINOHE TAKASHI
  • MATSUDA TOKIYOSHI
  • HITORA TOSHIMI
国際特許分類(IPC)
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