Crystal, crystalline film, semiconductor device including crystalline film, and method for producing crystalline film
|Posted date||May 18, 2020|
|Date of filing||Aug 21, 2018|
|Gazette Date||Mar 5, 2019|
|Title||Crystal, crystalline film, semiconductor device including crystalline film, and method for producing crystalline film|
|Abstract||According to an aspect of a present inventive subject matter, a crystal includes: a corundum-structured oxide semiconductor as a major component, the corundum-structured oxide semiconductor includinggallium and/or indium and doped with a dopant including germanium; a principal plane; a carrier concentration that is 1x1018/cm3 or more; and an electron mobility that is 20 cm2/Vs or more.|
|Outline of related art and contending technology||
By way of background, it is known that gallium oxide (Ga2O3) has five different polymorphs, including α-phase, β-phase, γ-phase, δ-phase andphase (see NPL1: Rustum Roy et al., "Polymorphism of Ga2O3and the System Ga2O3-H2O"). In this five polymorphic forms, β-Ga2O3is considered to be the most thermodynamically stable, and the α-Ga2O3is considered to be a meta-stable. Gallium oxide (Ga2O3) exhibit a wide band gap and as potential of the semiconductor device of the semiconductor material is drawn more attention.
According to NPL 2, suggest a gallium oxide (Ga2O3) with indium and/or aluminum can be formed through the band gap of a mixed crystal to control (see NPL 2: Kentaro KANEKO, "Fabrication and physical properties of corundum-structured alloys based on gallium oxide", papers, Kyoto University, March 2013, summary and open to the public content in 31 January 2014). Wherein, by InXAlYGaZO3(0≤ X ≤ 2,0 ≤ Y ≤ 2,0 ≤ Z ≤ 2, X + Y + Z=1.5 to 2.5) InAlGaO-based semiconductor is indicated by very attractive material (see PCT International Publication No. WO2014/050793A1)..
However, since the β phase is gallium oxide has a stable phase, without the use of suitable film-forming method and are difficult to form a metastable corundum structure in the case of a crystal film of gallium oxide. Moreover, by a melt growth substrate cannot be used to corundum structure obtained by the block and the meta-stable α-Ga2O3. Thus, having the corundum structure α-Ga2O3the same structure of the sapphire substrate is used for on the sapphire substrate to form a α-Ga2O3,however, sapphire and α-Ga2O3lattice mismatch of not less (Δ a/a-4.5%, Δ c/c-3.3%), therefore, hetero-epitaxially grown on a sapphire substrate of the α-Ga2O3crystalline films tend to include a high density of dislocations. In addition, there is also accelerate the deposition rate, improve the α-phase and a crystalline film of gallium oxide/or α-phase crystal film of the mass of a mixed crystal of gallium oxide, to suppress crystal defects (including the occurrence of cracks, abnormal growth, and a twin crystal/or bending of a crystalline film) of a further challenge. In such a case, a crystalline semiconductor film is carried out without interruption of the corundum structure studies.
Disclosed is a bromide or iodide and/or indium gallium or through use of an chemical vapor deposition (CVD) an oxide crystal film is produced (see Japanese Patent Laid-Open No. 5397794). Furthermore, there is disclosed a multi-layered structure include a sapphire structure of corundum structure on a substrate having an insulating layer of the semiconductor layer and the corundum structure (see Japanese Patent Laid-Open No. 5343224 and publications 5397795 and Unexamined Japanese Patent Publication No. JP2014-72533). In addition, discloses the use of ELO substrate through CVD and forming the voids is deposited atomized (see Unexamined Japanese Patent Publication No. 2016-100592, Publication No. 2016-98166, Publication No. 2016-100593 and publications 2016-155714). Furthermore, there is disclosed through a halide vapor phase epitaxy (HVPE) method to form a corundum structure of a gallium oxide film. However, there is room for improvement in the film-forming rate or speed, and the need for a manufacturing method of a crystalline film with sufficient speed.
Moreover, in view of the α-Ga2O3is metastable, and a stabilized β-Ga2O3compared to a case, in the inhibition of the defect density in the more difficult to create α-Ga2O3film and those containing gallium and one or more metals from crystalline films of crystalline metal oxide. Therefore, in order to obtain α-Ga2O3film and those containing gallium and one or more metals from crystalline films of crystalline metal oxide, there are still various deal with the challenge.
|Scope of claims||
1. A single crystal, comprising:
Corundum structure as a main component an oxide semiconductor, gallium and indium oxide of corundum structure doped with germanium-containing semiconductor comprises a dopant/or;
The main plane;
1X1018/cm3or a higher carrier concentration; and
20 Cm2/Vsor higher electron mobility.
2. The crystal according to claim 1, wherein,
A main crystal plane is the c-plane.
3. The crystal according to claim 1, wherein,
A main crystal plane is m-plane.
4. The crystal according to claim 1, wherein,
A main crystal plane including off angle.
5. The crystal according to claim 1, wherein,
Corundum structure including an oxide semiconductor mixed crystal, and one or more selected from a mixed crystal comprising gallium aluminum, indium, iron, chromium, vanadium, titanium, rhodium, nickel, cobalt and iridium metal.
6. The crystal according to claim 1, wherein,
Crystal as the crystal silicon film having a film shape.
7. The crystal according to claim 5, wherein is included in the corundum structure mixed crystal of an oxide semiconductor including 1x1017/cm3or more aluminum.
8. One crystalline silicon film, comprising:
An oxide semiconductor as a main component, oxide semiconductor including 1x1017/cm3or more aluminum;
1X1018/cm3or a higher carrier concentration; and
20 Cm2/Vsor higher electron mobility.
9. A crystalline film according to claim 8, wherein,
The oxide semiconductor comprises gallium.
10. A crystalline film according to claim 8, wherein,
Oxide semiconductor comprises a mixed crystal.
11. A semiconductor device, comprising:
Claim 6 as crystals;
Of the 1st electrode is electrically connected to the crystal; and
2nd electrode which is electrically connected to the crystal.
12. A semiconductor device, comprising:
Claim 8 such as a room;
Is electrically connected with the crystalline film of the 1st electrode; and
2nd electrode which is electrically connected with the crystalline film.
13. A method for manufacturing method of a crystalline film, comprising:
Vaporized metal source to be converted to a metal-containing raw material gas metal source;
The metal-containing raw material gas, an oxygen-containing raw material gas into the reaction chamber to the substrate;
The hydrogen-containing dopant raw material gas and reaction gas is supplied into the reaction chamber to the substrate; and
At a dopant-containing raw material gas and reactive gas stream to form a crystalline film.
14. Method according to claim 13, wherein,
A dopant-containing raw material gas comprises germanium.
15. Method according to claim 14, wherein,
A dopant-containing raw material gas is germanium halides gas.
16. Method according to claim 13, wherein
Reaction gas is an etching gas.
17. Method according to claim 13, wherein,
Reaction gas comprising hydrogen halide and halogen and hydrogen selected from the group including at least one of the groups.
18. Method according to claim 13, wherein,
Reaction gases include hydrogen halides.
19. Method according to claim 13, wherein,
Substrates include a sapphire structure.
20. Method according to claim 13, wherein,
The crystal silicon film having a corundum structure.
21. Method according to claim 13, wherein the temperature in the range of 700 °C to 400 °C for a substrate heat.
22. Method according to claim 13, wherein,
A source of metal comprises gallium, and the metal-containing raw material gas comprises gallium.
23. Method according to claim 13, wherein,
Through metal halide source for the gasification of the metal source.
24. Method according to claim 13, wherein,
An oxygen-containing source gas selected from the group comprising oxygen (O2), water (H2O) and a nitrous oxide (N2O) least one.
|IPC(International Patent Classification)||
Contact Information for " Crystal, crystalline film, semiconductor device including crystalline film, and method for producing crystalline film "
- Kyoto University Office of Society-Academia Collaboration for Innovation
- URL: https://www.saci.kyoto-u.ac.jp/
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