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Crystalline film, semiconductor device including crystalline film, and method for producing crystalline film

外国特許コード F200010119
整理番号 5926
掲載日 2020年5月18日
出願国 中華人民共和国
出願番号 201810948461
公報番号 109423694
出願日 平成30年8月20日(2018.8.20)
公報発行日 平成31年3月5日(2019.3.5)
優先権データ
  • 特願2017-158306 (2017.8.21) JP
  • 特願2018-050516 (2018.3.19) JP
  • 特願2018-120457 (2018.6.26) JP
発明の名称 (英語) Crystalline film, semiconductor device including crystalline film, and method for producing crystalline film
発明の概要(英語) According to an aspect of a present inventive subject matter, a crystalline film includes a crystalline metal oxide as a major component, the crystalline film includes a corundum structure, a surfacearea that is 9[Mu]m<2
従来技術、競合技術の概要(英語) BACKGROUND ART
By way of background, it is known that gallium oxide (Ga2O3) has five different polymorphs, including α-phase, β-phase, γ-phase, δ-phase andphase (see NPL1: Rustum Roy et al., "Polymorphism of Ga2O3 and the System Ga2O3-H2O"). In this five polymorphic forms, β-Ga2O3is considered to be the most thermodynamically stable, and the α-Ga2O3is considered to be a meta-stable. Gallium oxide (Ga2O3) exhibit a wide band gap and as potential of the semiconductor device of the semiconductor material is drawn more attention.
According to NPL 2, suggest a gallium oxide (Ga2O3) with indium and/or aluminum can be formed through the band gap of a mixed crystal to control (see NPL 2: Kentaro KANEKO, "Fabrication and physical properties of corundum-structured alloys based on gallium oxide", papers, Kyoto University, March 2013, summary and open to the public content in 31 January 2014). Wherein, by InXAlYGaZO3(0≤ X ≤ 2,0 ≤ Y ≤ 2,0 ≤ Z ≤ 2, X + Y + Z=1.5 to 2.5) InAlGaO-based semiconductor is indicated by very attractive material (see PCT International Publication No. WO2014/050793A1)..
However, since the β phase is gallium oxide has a stable phase, without the use of suitable film-forming method and are difficult to form a metastable corundum structure in the case of a crystal film of gallium oxide. Moreover, obtained by melt growth substrate cannot be used to corundum structure block and the meta-stable α-Ga2O3. Thus, having the corundum structure α-Ga2O3the same structure of the sapphire substrate is used for on the sapphire substrate to form a α-Ga2O3,however, sapphire and α-Ga2O3lattice mismatch of not less (Δ a/a-4.5%, Δ c/c-3.3%), therefore, hetero-epitaxially grown on a sapphire substrate of the α-Ga2O3crystalline films tend to include a high density of dislocations. In addition, there is also accelerate the deposition rate, improve the α-phase crystal film of gallium oxide or/and the α-phase crystal film of the mass of a mixed crystal of gallium oxide, to suppress crystal defects (including the occurrence of cracks, abnormal growth, crystal/or bending of a crystalline film and a twin crystal) for further challenging. In such a case, a crystalline semiconductor film is carried out without interruption of the corundum structure studies.
Disclosed is a bromide or iodide and/or indium gallium or through use of an chemical vapor deposition (CVD) an oxide crystal film is produced (see Japanese Patent Laid-Open No. 5397794). Furthermore, there is disclosed a multi-layered structure include a sapphire structure of corundum structure on a substrate having an insulating layer of the semiconductor layer and corundum structure (see Japanese Patent Laid-Open No. 5343224 and publications 5397795 and Unexamined Japanese Patent Publication No. JP2014-72533). In addition, discloses the use of ELO substrate through CVD and forming the voids is deposited atomized (see Unexamined Japanese Patent Publication No. 2016-100592, Publication No. 2016-98166, Publication No. 2016-100593 and publications 2016-155714). Furthermore, there is disclosed through Halide Vapor Phase Epitaxy (HVPE) method to form a corundum structure of a gallium oxide film. However, there is room for improvement in the film-forming rate or speed, and the production of a crystalline film with sufficient speed is needed is a method.
Moreover, in view of the α-Ga2O3is metastable, and a stabilized β-Ga2O3compared to a case, in the inhibition of the defect density in the more difficult to create α-Ga2O3film and those containing gallium and one or more metals from crystalline films of crystalline metal oxide. Therefore, in order to obtain α-Ga2O3film and those containing gallium and one or more metals from crystalline films of crystalline metal oxide, there are still various deal with the challenge.
特許請求の範囲(英語) [claim1]
1. One crystalline silicon film, comprising:
As a main component crystalline metal oxide;
The crystal silicon film comprising corundum structure, 9 μm2or a larger surface area and less than 5x106cm-2dislocation density.

[claim2]
2. A crystalline film according to claim 1, wherein:
9 Μm2or a larger surface area comprises an epitaxial lateral over growth layer crystalline metal oxide.

[claim3]
3. A crystalline film according to claim 1, wherein:
Crystalline film is included in at least perpendicular to thethe Young's modulus of the crystalline metal oxide is grown on an epitaxial lateral overgrowth.

[claim4]
4. One crystalline silicon film, comprising:
Crystalline metal oxide as a main component; and
In at least perpendicular to thethe Young's modulus of the crystalline metal oxide is grown on an epitaxial lateral overgrowth.

[claim5]
5. A crystalline film according to claim 4, wherein:
A crystalline metal oxide comprises gallium, 9 μm2or a larger surface area and less than 5x106cm-2dislocation density.

[claim6]
6. A crystalline film according to claim 5, wherein:
A crystalline metal oxide selected from aluminum further comprises, indium, iron, chromium, vanadium, titanium, rhodium, nickel, cobalt and iridium at least one metal.

[claim7]
7. A crystalline film according to claim 1, wherein:
The crystal silicon film comprises a dopant.

[claim8]
8. A crystalline film according to claim 5, wherein:
The crystal silicon film comprises a dopant.

[claim9]
9. A semiconductor device, comprising:
Claim 7 such as a room;
1st electrode which is electrically connected with the crystalline film; and
2nd electrode which is electrically connected with the crystalline film.

[claim10]
10. A semiconductor device, comprising:
Claim 4 is still a room for example.

[claim11]
11. A method for manufacturing method of a crystalline film, comprising:
Vaporized metal source to be converted to a metal-containing raw material gas metal source;
The metal-containing raw material gas and oxygen-containing raw material gas into the reaction chamber to the substrate, disposed on the substrate including at least one mask and/or uneven portions of the at least one opening; and
Reactive gases are supplied into the reaction chamber to the substrate, to thereby improve the air flow on the substrate at at least one opening of the uneven portions at vertical, lateral and/or grow radially at least one crystalline metal oxide island, such that at least one crystalline metal oxide island formed of crystalline metal oxide epitaxial lateral over growth layer.

[claim12]
12. Method according to claim 11, wherein:
Reaction gas is an etching gas.

[claim13]
13. Method according to claim 11, wherein:
Reaction gas comprising hydrogen halide and halogen and hydrogen selected from the group including at least one of the groups.

[claim14]
14. Claim 11 as lee method, wherein:
The uneven portion of the at least one mask comprising a mask having at least one opening of the sheet-like, sheet-like mask on the surface of the base plate includes two or more openings, and that
A sheet-like mask on a substrate two or more of the plurality of openings regularly arranged on the surface of the substrate.

[claim15]
15. Method according to claim 11, wherein:
A substrate is heated at a temperature in the range of 400 °C to 700 °C.

[claim16]
16. Method according to claim 11, wherein:
A source of metal comprises a gallium source, and to
A metal-containing raw material gas comprises raw material gas containing gallium.

[claim17]
17. Method according to claim 11, wherein:
Through metal halide source for the gasification of the metal source.

[claim18]
18. Method according to claim 11, wherein:
An oxygen-containing source gas selected from the group comprising oxygen (O2), water (H2O) and a nitrous oxide (N2O) least one.

[claim19]
19. Method according to claim 11, wherein:
Substrates include a sapphire structure, and the crystalline film comprises corundum structure.

[claim20]
20. Method according to claim 11, wherein:
The substrate further comprises at least one surface of the substrate through chemical vapor deposition using an atomizing (CVD) method to form a buffer layer, and that
Located on the cushion layer on the uneven portions of the substrate.

[claim21]
21. Method according to claim 11, wherein:
The reaction gas stream to form a metal oxide crystal film by using a halide vapor phase epitaxy (HVPE) method is carried out.

[claim22]
22. Method according to claim 11, wherein:
To form a metal oxide crystalline film of 5 μm/h or higher growth rate.

[claim23]
23. Method according to claim 11, wherein:
The uneven portion of the at least one mask comprising at least one opening arranged in parallel with two or more elongated mask, disposed adjacent at least one opening is located between two elongated mask.

[claim24]
24. Method according to claim 11, wherein:
At least one of uneven portions of the dot pattern mask comprising a mask, is equal to 3 μm and not more than 100 μm dot mask to larger than a range of arranged at regular intervals.

[claim25]
25. Method according to claim 11, further comprising:
As the crystalline oxide of the crystalline silicon film formed on the surface of a crystalline film of the 1st uneven portion; and
In the crystalline oxide of the 1st surface of the crystalline silicon film is formed on the uneven portions of the 2nd crystalline silicon film.

[claim26]
26. Method according to claim 25, wherein:
1st crystalline silicon film is formed as a sacrificial layer to be peeled, so that the 2nd to the 1st surface of the crystalline silicon film can be crystallized films uneven portions of the separation.

[claim27]
27. Method according to claim 22, wherein:
In the 1st through uneven portions formed on the surface of the crystalline silicon film crystallized films disposed on surfaces of at 1st comprising two or more metals, metal compounds and/or non-metallic compound at least one of a mask.

[claim28]
28. Method according to claim 23, wherein:
1st crystalline film includes crystalline gallium oxide as a main component, and one or more metals of the group comprising Gallium or mixed crystals as the predominant component, and to
2nd crystalline silicon film including the crystalline gallium oxide as a main component, and one or more metals of the group comprising Gallium or mixed crystals as the predominant component.

[claim29]
29. Method according to claim 24,
Wherein the 1st crystalline film includes crystalline gallium oxide as a main component and one or more metals from gallium or mixed crystals as the predominant component, and
Wherein the 2nd crystalline gallium oxide as a main component or a crystalline silicon film comprises gallium and one or more metals as a main component a mixed crystal.
  • 出願人(英語)
  • FLOSFIA INC.
  • NATIONAL INSTITUTE FOR MATERIALS SCIENCE
  • KYOTO UNIVERSITY
  • SAGA UNIVERSITY
  • 発明者(英語)
  • OSHIMA YUICHI
  • FUJITA SHIZUO
  • KANEKO KENTARO
  • KASU MAKOTO
  • KAWARA KATSUAKI
  • SHINOHE TAKASHI
  • MATSUDA TOKIYOSHI
  • HITORA TOSHIMI
国際特許分類(IPC)
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