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Method for producing crystalline film NEW

外国特許コード F200010120
整理番号 5925
掲載日 2020年5月18日
出願国 アメリカ合衆国
出願番号 201816106864
公報番号 20190055667
出願日 平成30年8月21日(2018.8.21)
公報発行日 平成31年2月21日(2019.2.21)
優先権データ
  • 特願2017-158307 (2017.8.21) JP
発明の名称 (英語) Method for producing crystalline film NEW
発明の概要(英語) According to an aspect of a present inventive subject matter, a method for producing a crystalline film includes; gasifying a metal source containing a metal to turn the metal source into a metal-containing raw-material gas; supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto a substrate including a buffer layer; and supplying a reactive gas into the reaction chamber onto the substrate to form a crystalline film on the substrate under a gas flow of the reactive gas.
特許請求の範囲(英語) [claim1]
1. A method for producing a crystalline film comprising:
gasifying a metal source comprising a metal to turn the metal source into a metal-containing raw-material gas;
supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto a substrate comprising a buffer layer; and
supplying a reactive gas into the reaction chamber onto the substrate to form a crystalline film on the substrate under a gas flow of the reactive gas.

[claim2]
2. The method of claim 1, wherein
the buffer layer comprised in the substrate is formed by use of a mist chemical vapor deposition method.

[claim3]
3. The method of claim 1, wherein
the crystalline film is formed by use of a halide vapor phase epitaxy method.

[claim4]
4. The method of claim 1, wherein
the crystalline film is a layered film comprising the substrate.

[claim5]
5. The method of claim 1 further comprising:
separating the crystalline film by removing at least the substrate.

[claim6]
6. A method for producing a crystalline film comprising:
forming a buffer layer on a substrate;
gasifying a metal source comprising a metal to turn the metal source into a metal-containing raw-material gas;
supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto the buffer layer on the substrate; and
supplying a reactive gas into the reaction chamber onto the buffer layer on the substrate to form a crystalline film on the buffer layer of the substrate under a gas flow of the reactive gas.

[claim7]
7. The method of claim 6, wherein
the forming the buffer layer on the substrate is done by use of a mist chemical vapor deposition method.

[claim8]
8. The method of claim 6, wherein
the buffer layer comprises a part of the metal comprised in the metal source.

[claim9]
9. The method of claim 6, wherein
a difference between a lattice constant of the buffer layer and a lattice constant of the crystalline film is within 20%.

[claim10]
10. The method of claim 6, wherein
the reactive gas is an etching gas.

[claim11]
11. The method of claim 6, wherein
the reactive gas comprises at least one selected from among hydrogen halide and a group comprising halogen and hydrogen.

[claim12]
12. The method of claim 6, wherein
the reactive gas comprises hydrogen halide.

[claim13]
13. The method of claim 6, wherein
the substrate comprises a patterned sapphire substrate.

[claim14]
14. The method of claim 6, wherein
the substrate is heated up to a temperature that is in a range of 400° C. to 700° C. to form the crystalline film under the gas flow of the reactive gas.

[claim15]
15. The method of claim 6,
wherein the metal source comprises a gallium source, and
wherein the metal-containing raw-material gas comprises a gallium-containing raw-material gas.

[claim16]
16. The method of claim 6, wherein
the gasifying the metal source is done by halogenating the metal source.

[claim17]
17. The method of claim 6, wherein
the oxygen-containing raw-material gas comprises at least one selected from among oxygen (O2), water (H2O) and nitrous oxide (N2O).

[claim18]
18. The method of claim 6, wherein
the substrate comprises a corundum structure, and the crystalline film comprises a corundum structure.

[claim19]
19. The method of claim 6, wherein
the crystalline film is a layered film comprising the substrate.

[claim20]
20. The method of claim 6 further comprising:
separating the crystalline film by removing at least the substrate.

[claim21]
21. The method of claim 6 further comprising:
separating the crystalline film from the buffer layer on the substrate.
  • 発明者/出願人(英語)
  • OSHIMA Yuichi
  • FUJITA Shizuo
  • KANEKO Kentaro
  • KASU Makoto
  • KAWARA Katsuaki
  • SHINOHE Takashi
  • MATSUDA Tokiyoshi
  • HITORA Toshimi
  • FLOSFIA INC.
  • NATIONAL INSTITUTE FOR MATERIALS SCIENCE
  • KYOTO UNIVERSITY
  • SAGA UNIVERSITY
国際特許分類(IPC)
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