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Method for producing crystalline film

Foreign code F200010120
File No. 5925
Posted date May 18, 2020
Country United States of America
Application number 201816106864
Gazette No. 20190055667
Date of filing Aug 21, 2018
Gazette Date Feb 21, 2019
Priority data
  • P2017-158307 (Aug 21, 2017) JP
Title Method for producing crystalline film
Abstract According to an aspect of a present inventive subject matter, a method for producing a crystalline film includes; gasifying a metal source containing a metal to turn the metal source into a metal-containing raw-material gas; supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto a substrate including a buffer layer; and supplying a reactive gas into the reaction chamber onto the substrate to form a crystalline film on the substrate under a gas flow of the reactive gas.
Scope of claims [claim1]
1. A method for producing a crystalline film comprising:
gasifying a metal source comprising a metal to turn the metal source into a metal-containing raw-material gas;
supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto a substrate comprising a buffer layer; and
supplying a reactive gas into the reaction chamber onto the substrate to form a crystalline film on the substrate under a gas flow of the reactive gas.

[claim2]
2. The method of claim 1, wherein
the buffer layer comprised in the substrate is formed by use of a mist chemical vapor deposition method.

[claim3]
3. The method of claim 1, wherein
the crystalline film is formed by use of a halide vapor phase epitaxy method.

[claim4]
4. The method of claim 1, wherein
the crystalline film is a layered film comprising the substrate.

[claim5]
5. The method of claim 1 further comprising:
separating the crystalline film by removing at least the substrate.

[claim6]
6. A method for producing a crystalline film comprising:
forming a buffer layer on a substrate;
gasifying a metal source comprising a metal to turn the metal source into a metal-containing raw-material gas;
supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto the buffer layer on the substrate; and
supplying a reactive gas into the reaction chamber onto the buffer layer on the substrate to form a crystalline film on the buffer layer of the substrate under a gas flow of the reactive gas.

[claim7]
7. The method of claim 6, wherein
the forming the buffer layer on the substrate is done by use of a mist chemical vapor deposition method.

[claim8]
8. The method of claim 6, wherein
the buffer layer comprises a part of the metal comprised in the metal source.

[claim9]
9. The method of claim 6, wherein
a difference between a lattice constant of the buffer layer and a lattice constant of the crystalline film is within 20%.

[claim10]
10. The method of claim 6, wherein
the reactive gas is an etching gas.

[claim11]
11. The method of claim 6, wherein
the reactive gas comprises at least one selected from among hydrogen halide and a group comprising halogen and hydrogen.

[claim12]
12. The method of claim 6, wherein
the reactive gas comprises hydrogen halide.

[claim13]
13. The method of claim 6, wherein
the substrate comprises a patterned sapphire substrate.

[claim14]
14. The method of claim 6, wherein
the substrate is heated up to a temperature that is in a range of 400° C. to 700° C. to form the crystalline film under the gas flow of the reactive gas.

[claim15]
15. The method of claim 6,
wherein the metal source comprises a gallium source, and
wherein the metal-containing raw-material gas comprises a gallium-containing raw-material gas.

[claim16]
16. The method of claim 6, wherein
the gasifying the metal source is done by halogenating the metal source.

[claim17]
17. The method of claim 6, wherein
the oxygen-containing raw-material gas comprises at least one selected from among oxygen (O2), water (H2O) and nitrous oxide (N2O).

[claim18]
18. The method of claim 6, wherein
the substrate comprises a corundum structure, and the crystalline film comprises a corundum structure.

[claim19]
19. The method of claim 6, wherein
the crystalline film is a layered film comprising the substrate.

[claim20]
20. The method of claim 6 further comprising:
separating the crystalline film by removing at least the substrate.

[claim21]
21. The method of claim 6 further comprising:
separating the crystalline film from the buffer layer on the substrate.
  • Inventor, and Inventor/Applicant
  • OSHIMA Yuichi
  • FUJITA Shizuo
  • KANEKO Kentaro
  • KASU Makoto
  • KAWARA Katsuaki
  • SHINOHE Takashi
  • MATSUDA Tokiyoshi
  • HITORA Toshimi
  • FLOSFIA INC.
  • NATIONAL INSTITUTE FOR MATERIALS SCIENCE
  • KYOTO UNIVERSITY
  • SAGA UNIVERSITY
IPC(International Patent Classification)
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