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Method for producing crystalline film

外国特許コード F200010121
整理番号 5925
掲載日 2020年5月18日
出願国 中華人民共和国
出願番号 201810948079
公報番号 109423690
出願日 平成30年8月20日(2018.8.20)
公報発行日 平成31年3月5日(2019.3.5)
優先権データ
  • 特願2017-158307 (2017.8.21) JP
発明の名称 (英語) Method for producing crystalline film
発明の概要(英語) According to an aspect of a present inventive subject matter, a method for producing a crystalline film includes; gasifying a metal source containing a metal to turn the metal source into a metal-containing raw-material gas; supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto a substrate including a buffer layer; and supplying a reactive gas into the reaction chamber onto the substrate to form a crystalline film on the substrate under a gas flow of the reactive gas.
従来技術、競合技術の概要(英語) BACKGROUND ART
By way of background, it is known that gallium oxide (Ga2O3) has five different polymorphs, including α-phase, β-phase, γ-phase, δ-phase and ε-phase (see NPL1: Rustum Roy et al., "Polymorphism of Ga2O3and the System Ga2O3-H2O").
In this five polymorphs, β-Ga2O3is considered to be the most thermodynamically stable, and the α-Ga2O3is considered to be a meta-stable. Gallium oxide (Ga2O3) exhibit a wide band gap and as potential of the semiconductor device of the semiconductor material is drawn more attention.
According to NPL 2, suggest a gallium oxide (Ga2O3) with indium and/or aluminum can be formed through the band gap of a mixed crystal to control (see NPL 2: Kentaro KANEKO, "Fabrication and physical properties of corundum-structured alloys based on gallium oxide", papers, Kyoto University, March 2013, summary and open to the public content in 31 January 2014). Wherein, by InXAlYGaZO3(0≤ X ≤ 2,0 ≤ Y ≤ 2,0 ≤ Z ≤ 2, X + Y + Z=1.5 to 2.5) InAlGaO-based semiconductor is indicated by very attractive material (see PCT International Publication No. WO2014/050793A1).
However, since the β phase is gallium oxide has a stable phase, without the use of suitable film-forming method and are difficult to form a metastable corundum structure in the case of a crystal film of gallium oxide. Moreover, obtained by melt-grown sapphire structure and the substrate cannot be used to block a meta-stable α-Ga2O3. Thus, having the corundum structure α-Ga2O3the same structure of the sapphire substrate is used for on the sapphire substrate to form a α-Ga2O3,however, sapphire and α-Ga2O3lattice mismatch of not less (δ a/a-4.5%, δ c/c-3.3%), therefore, hetero-epitaxially grown on a sapphire substrate of the α-Ga2O3crystalline films tend to include a high density of dislocations. In addition, there is also accelerate the deposition rate, improve the α-phase crystal film of gallium oxide or/and the α-phase crystal film of the mass of a mixed crystal of gallium oxide, to suppress crystal defects (including the occurrence of cracks, abnormal growth, crystal/or bending of a crystalline film and a twin crystal) for further challenging. In such a case, a crystalline semiconductor film is carried out without interruption of the corundum structure studies.
Disclosed is a bromide or iodide or indium/gallium and the atomization and by using a chemical vapor deposition (CVD) method to manufacture an oxide crystal film (see Japanese Patent Laid-Open No. 5397794). Furthermore, there is disclosed a multi-layered structure include a sapphire structure of corundum structure on a substrate having an insulating layer of the semiconductor layer and the corundum structure (see Japanese Patent Laid-Open No. 5343224 and publications 5397795 and Unexamined Japanese Patent Publication No. JP2014-72533). In addition, atomization is deposited through CVD discloses the use of ELO substrate and forming the voids (see Unexamined Japanese Patent Publication No. 2016-100592, Publication No. 2016-98166, Publication No. 2016-100593 and publications 2016-155714). Furthermore, there is disclosed through Halide Vapor Phase Epitaxy (HVPE) method to form a corundum structure of a gallium oxide film. However, there is room for improvement in the film-forming rate or speed, and the need for a manufacturing method of a crystalline film with sufficient speed.
Moreover, in view of the α-Ga2O3is metastable, and a stabilized β-Ga2O3compared to a case, in the inhibition of crystal defects are more difficult to create α-Ga2O3film and those containing gallium and one or more metals from crystalline films of crystalline metal oxide. Therefore, in order to obtain α-Ga2O3film and those containing gallium and one or more metals from crystalline films of crystalline metal oxide, there are still various deal with the challenge.
特許請求の範囲(英語) [claim1]
1. One method for manufacturing of a crystalline film, comprising:
A metal source of vaporized metal source includes metals to be converted to a metal-containing raw material gas;
The metal-containing raw material gas and oxygen-containing raw material gas into the reaction chamber to include a buffer layer on a substrate; and
Reactive gases are supplied into the reaction chamber to the substrate, the reaction gas stream to deposit the crystalized film on the substrate.

[claim2]
2. Method according to claim 1, wherein,
Through chemical vapor deposition method using an atomizing is formed that includes a buffer layer in the substrate.

[claim3]
3. Method according to claim 1, wherein,
Is formed by using a halide vapor phase epitaxy method is still a room.

[claim4]
4. Method according to claim 1, wherein,
A crystalline film is a layered film including a substrate.

[claim5]
5. Method according to claim 1, further comprising:
To separate a room through at least removal of the substrate.

[claim6]
6. One method for manufacturing of a crystalline film, comprising:
Forming a buffer layer on the substrate;
A metal source of vaporized metal source includes metals to be converted to a metal-containing raw material gas;
The metal-containing raw material gas and oxygen-containing raw material gas into the reaction chamber to a buffer layer on a substrate; and
Reactive gases are supplied into the reaction chamber to a buffer layer on a substrate, a stream of gas to the reaction buffer layer formed on the substrate of the crystalline film.

[claim7]
7. Method according to claim 6, wherein,
Forming a buffer layer on the substrate through chemical vapor deposition is carried out using an atomizing method.

[claim8]
8. Method according to claim 6, wherein,
The buffer layer comprises a portion of the metal contained in the metal source.

[claim9]
9. Method according to claim 6, wherein,
The lattice constant of the buffer layer with a crystalline lattice constant difference between an inner membrane 20% or less.

[claim10]
10. Method according to claim 6, wherein,
Reaction gas is an etching gas.

[claim11]
11. Method according to claim 6, wherein,
The reaction gas is selected from the group including hydrogen halide and at least one of the groups include halogen and hydrogen.

[claim12]
12. Method according to claim 6, wherein,
Reaction gases include hydrogen halides.

[claim13]
13. Method according to claim 6, wherein,
Substrate comprises a patterned sapphire substrate.

[claim14]
14. Method according to claim 6, wherein,
The substrate 700 °C to 400 °C heat until the temperature in the range of, to the reaction gas stream to form a crystalline film.

[claim15]
15. Method according to claim 6,
Wherein the metal source comprises a gallium source, and to
Wherein the metal-containing raw material gas comprises raw material gas containing gallium.

[claim16]
16. Method according to claim 6, wherein,
Through metal halide source for vaporized metal source.

[claim17]
17. Method according to claim 6, wherein,
An oxygen-containing source gas selected from the group comprising oxygen (O2), water (H2O) and a nitrous oxide (N2O) least one.

[claim18]
18. Method according to claim 6, wherein,
Substrates include a sapphire structure, and the crystalline film comprises corundum structure.

[claim19]
19. Method according to claim 6, wherein,
A crystalline film is a layered film including a substrate.

[claim20]
20. Method according to claim 6, further comprising:
To separate a room through at least removal of the substrate.

[claim21]
21. Method according to claim 6, further comprising:
A buffer layer on the crystalline film and the substrate is separated.
  • 出願人(英語)
  • FLOSFIA INC.
  • NATIONAL INSTITUTE FOR MATERIALS SCIENCE
  • KYOTO UNIVERSITY
  • SAGA UNIVERSITY
  • 発明者(英語)
  • OSHIMA YUICHI
  • FUJITA SHIZUO
  • KANEKO, KENTARO
  • KASU MAKOTO
  • KAWARA, KATSUAKI
  • SHINOHE TAKASHI
  • MATSUDA TOKIYOSHI
  • HITORA TOSHIMI
国際特許分類(IPC)
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