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Method for producing crystalline film

Foreign code F200010121
File No. 5925
Posted date May 18, 2020
Country China
Application number 201810948079
Gazette No. 109423690
Date of filing Aug 20, 2018
Gazette Date Mar 5, 2019
Priority data
  • P2017-158307 (Aug 21, 2017) JP
Title Method for producing crystalline film
Abstract According to an aspect of a present inventive subject matter, a method for producing a crystalline film includes; gasifying a metal source containing a metal to turn the metal source into a metal-containing raw-material gas; supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto a substrate including a buffer layer; and supplying a reactive gas into the reaction chamber onto the substrate to form a crystalline film on the substrate under a gas flow of the reactive gas.
Outline of related art and contending technology BACKGROUND ART
By way of background, it is known that gallium oxide (Ga2O3) has five different polymorphs, including α-phase, β-phase, γ-phase, δ-phase and ε-phase (see NPL1: Rustum Roy et al., "Polymorphism of Ga2O3and the System Ga2O3-H2O").
In this five polymorphs, β-Ga2O3is considered to be the most thermodynamically stable, and the α-Ga2O3is considered to be a meta-stable. Gallium oxide (Ga2O3) exhibit a wide band gap and as potential of the semiconductor device of the semiconductor material is drawn more attention.
According to NPL 2, suggest a gallium oxide (Ga2O3) with indium and/or aluminum can be formed through the band gap of a mixed crystal to control (see NPL 2: Kentaro KANEKO, "Fabrication and physical properties of corundum-structured alloys based on gallium oxide", papers, Kyoto University, March 2013, summary and open to the public content in 31 January 2014). Wherein, by InXAlYGaZO3(0≤ X ≤ 2,0 ≤ Y ≤ 2,0 ≤ Z ≤ 2, X + Y + Z=1.5 to 2.5) InAlGaO-based semiconductor is indicated by very attractive material (see PCT International Publication No. WO2014/050793A1).
However, since the β phase is gallium oxide has a stable phase, without the use of suitable film-forming method and are difficult to form a metastable corundum structure in the case of a crystal film of gallium oxide. Moreover, obtained by melt-grown sapphire structure and the substrate cannot be used to block a meta-stable α-Ga2O3. Thus, having the corundum structure α-Ga2O3the same structure of the sapphire substrate is used for on the sapphire substrate to form a α-Ga2O3,however, sapphire and α-Ga2O3lattice mismatch of not less (δ a/a-4.5%, δ c/c-3.3%), therefore, hetero-epitaxially grown on a sapphire substrate of the α-Ga2O3crystalline films tend to include a high density of dislocations. In addition, there is also accelerate the deposition rate, improve the α-phase crystal film of gallium oxide or/and the α-phase crystal film of the mass of a mixed crystal of gallium oxide, to suppress crystal defects (including the occurrence of cracks, abnormal growth, crystal/or bending of a crystalline film and a twin crystal) for further challenging. In such a case, a crystalline semiconductor film is carried out without interruption of the corundum structure studies.
Disclosed is a bromide or iodide or indium/gallium and the atomization and by using a chemical vapor deposition (CVD) method to manufacture an oxide crystal film (see Japanese Patent Laid-Open No. 5397794). Furthermore, there is disclosed a multi-layered structure include a sapphire structure of corundum structure on a substrate having an insulating layer of the semiconductor layer and the corundum structure (see Japanese Patent Laid-Open No. 5343224 and publications 5397795 and Unexamined Japanese Patent Publication No. JP2014-72533). In addition, atomization is deposited through CVD discloses the use of ELO substrate and forming the voids (see Unexamined Japanese Patent Publication No. 2016-100592, Publication No. 2016-98166, Publication No. 2016-100593 and publications 2016-155714). Furthermore, there is disclosed through Halide Vapor Phase Epitaxy (HVPE) method to form a corundum structure of a gallium oxide film. However, there is room for improvement in the film-forming rate or speed, and the need for a manufacturing method of a crystalline film with sufficient speed.
Moreover, in view of the α-Ga2O3is metastable, and a stabilized β-Ga2O3compared to a case, in the inhibition of crystal defects are more difficult to create α-Ga2O3film and those containing gallium and one or more metals from crystalline films of crystalline metal oxide. Therefore, in order to obtain α-Ga2O3film and those containing gallium and one or more metals from crystalline films of crystalline metal oxide, there are still various deal with the challenge.
Scope of claims [claim1]
1. One method for manufacturing of a crystalline film, comprising:
A metal source of vaporized metal source includes metals to be converted to a metal-containing raw material gas;
The metal-containing raw material gas and oxygen-containing raw material gas into the reaction chamber to include a buffer layer on a substrate; and
Reactive gases are supplied into the reaction chamber to the substrate, the reaction gas stream to deposit the crystalized film on the substrate.

[claim2]
2. Method according to claim 1, wherein,
Through chemical vapor deposition method using an atomizing is formed that includes a buffer layer in the substrate.

[claim3]
3. Method according to claim 1, wherein,
Is formed by using a halide vapor phase epitaxy method is still a room.

[claim4]
4. Method according to claim 1, wherein,
A crystalline film is a layered film including a substrate.

[claim5]
5. Method according to claim 1, further comprising:
To separate a room through at least removal of the substrate.

[claim6]
6. One method for manufacturing of a crystalline film, comprising:
Forming a buffer layer on the substrate;
A metal source of vaporized metal source includes metals to be converted to a metal-containing raw material gas;
The metal-containing raw material gas and oxygen-containing raw material gas into the reaction chamber to a buffer layer on a substrate; and
Reactive gases are supplied into the reaction chamber to a buffer layer on a substrate, a stream of gas to the reaction buffer layer formed on the substrate of the crystalline film.

[claim7]
7. Method according to claim 6, wherein,
Forming a buffer layer on the substrate through chemical vapor deposition is carried out using an atomizing method.

[claim8]
8. Method according to claim 6, wherein,
The buffer layer comprises a portion of the metal contained in the metal source.

[claim9]
9. Method according to claim 6, wherein,
The lattice constant of the buffer layer with a crystalline lattice constant difference between an inner membrane 20% or less.

[claim10]
10. Method according to claim 6, wherein,
Reaction gas is an etching gas.

[claim11]
11. Method according to claim 6, wherein,
The reaction gas is selected from the group including hydrogen halide and at least one of the groups include halogen and hydrogen.

[claim12]
12. Method according to claim 6, wherein,
Reaction gases include hydrogen halides.

[claim13]
13. Method according to claim 6, wherein,
Substrate comprises a patterned sapphire substrate.

[claim14]
14. Method according to claim 6, wherein,
The substrate 700 °C to 400 °C heat until the temperature in the range of, to the reaction gas stream to form a crystalline film.

[claim15]
15. Method according to claim 6,
Wherein the metal source comprises a gallium source, and to
Wherein the metal-containing raw material gas comprises raw material gas containing gallium.

[claim16]
16. Method according to claim 6, wherein,
Through metal halide source for vaporized metal source.

[claim17]
17. Method according to claim 6, wherein,
An oxygen-containing source gas selected from the group comprising oxygen (O2), water (H2O) and a nitrous oxide (N2O) least one.

[claim18]
18. Method according to claim 6, wherein,
Substrates include a sapphire structure, and the crystalline film comprises corundum structure.

[claim19]
19. Method according to claim 6, wherein,
A crystalline film is a layered film including a substrate.

[claim20]
20. Method according to claim 6, further comprising:
To separate a room through at least removal of the substrate.

[claim21]
21. Method according to claim 6, further comprising:
A buffer layer on the crystalline film and the substrate is separated.
  • Applicant
  • FLOSFIA INC.
  • NATIONAL INSTITUTE FOR MATERIALS SCIENCE
  • KYOTO UNIVERSITY
  • SAGA UNIVERSITY
  • Inventor
  • OSHIMA YUICHI
  • FUJITA SHIZUO
  • KANEKO, KENTARO
  • KASU MAKOTO
  • KAWARA, KATSUAKI
  • SHINOHE TAKASHI
  • MATSUDA TOKIYOSHI
  • HITORA TOSHIMI
IPC(International Patent Classification)
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