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VARIABLE RESISTANCE DEVICE AND METHOD FOR PRODUCING SAME 新技術説明会

外国特許コード F200010218
整理番号 18T185P,(S2019-0465-N0)
掲載日 2020年9月15日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2020JP019937
国際公開番号 WO 2020235591
国際出願日 令和2年5月20日(2020.5.20)
国際公開日 令和2年11月26日(2020.11.26)
優先権データ
  • 特願2019-096797 (2019.5.23) JP
発明の名称 (英語) VARIABLE RESISTANCE DEVICE AND METHOD FOR PRODUCING SAME 新技術説明会
発明の概要(英語) The purpose of the present invention is to provide a novel variable resistance device, the resistance state of which is variable. Consequently, one of typical variable resistance devices according to the present invention is provided with: an organic film; and a first electrode and a second electrode, which at least partially face each other, with the both surfaces of the organic film being interposed therebetween. This organic film is characterized in that: (1) π-type organic molecules having redox activity are contained therein; (2) the π-type organic molecules show π-π stacking in the stacking direction of the organic film; and (3) the π-type organic molecules show orientation anisotropy. For example, one suitable example of these π-type organic molecules is 2, 5, 8-tri(4-pyridyl)1, 3-diazaphenalene showing orientation anisotropy (so-called “aniso-TPDAP”).
従来技術、競合技術の概要(英語) BACKGROUND ART
Non-volatile variable resistance memory is known as next-generation memory. Devices that utilize the formation and erasing of metal oxide filaments are known as such variable resistance memory.
An organic ferroelectric memory using a ferroelectric organic material is also known as a variable resistance memory.
Furthermore, an organic memory having a floating gate structure is also known as a variable resistance memory.
PTL 1 discloses, as a variable resistance memory, a non-volatile memory device including a storage layer of a polyimide film in which electrically chargeable microparticles are dispersed between a first conductive portion and a second conductive portion.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • TOKYO INSTITUTE OF TECHNOLOGY
  • 発明者(英語)
  • KAWANO, Masaki
  • OHTSU, Hiroyoshi
  • KIM, Jaejun
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN WS ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL ST SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN TD TG
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