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OPTOELECTRONIC ELEMENT, FLAT DISPLAY IN WHICH SAME IS USED, AND METHOD FOR MANUFACTURING OPTOELECTRONIC ELEMENT NEW

外国特許コード F200010222
整理番号 S2018-0688-C0
掲載日 2020年10月28日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2019JP023604
国際公開番号 WO2020008839
国際出願日 令和元年6月14日(2019.6.14)
国際公開日 令和2年1月9日(2020.1.9)
優先権データ
  • 特願2018-126332 (2018.7.2) JP
発明の名称 (英語) OPTOELECTRONIC ELEMENT, FLAT DISPLAY IN WHICH SAME IS USED, AND METHOD FOR MANUFACTURING OPTOELECTRONIC ELEMENT NEW
発明の概要(英語) Provided is an optoelectronic element in which leak current is suppressed, and good photoluminescence properties are obtained at a low voltage. In this optoelectronic element, an active layer containing inorganic particles, and an oxide semiconductor conductive layer containing at least zinc (Zn), silicon (Si), and oxygen (O), are laminated.
従来技術、競合技術の概要(英語) BACKGROUND ART
Is a flat display, low-molecular or polymer organic light emitting material (polymer) organic EL (electroluminescence) used in the display element is used as a. Organic light-emitting material, has a high quantum efficiency, a large substrate is easily formed on the film to be an advantage, characteristic deterioration caused by the influence of oxygen and moisture, the emission spectral half width (FWHM: Full Width at Half Maximum) a problem that wide. Further, the high resistivity of the organic materials, leads to an increase in operating voltage of the EL element, which is problematic in higher power consumption. The organic EL element of the improved chemical stability in order to lower the operating voltage, the amorphous C12A7 is used as an electron injection layer, an electron transport layer is configured to use an amorphous ZnO-SiO2 has been proposed (for example, see Patent Document 1).
In recent years, the active layer, and a perovskite-type halogen compound, an inorganic material such as quantum dots which has been actively studied. The above-described inorganic EL material is, compared to organic materials, while having high quantum efficiency equivalent to the chemical stability and low cost is an advantage that the synthesis is possible.
Perovskite halide layer for supplying electrons efficiently into the electron transport layer, the ZnO nanoparticles are generally used. However, such as ZnO nanoparticles are surface ligand complex such as high manufacturing cost due to the use of synthetic processes. Further, a thin film, pin holes are generated between the particles and the particles easily, the surface roughness is large, becomes a cause of leak current or short circuit.
The pinhole can be suppressed and for flattening a surface, and between the ZnO layer of a perovskite layer, polyvinylpyrrolidone (PVP: polyvinylPyrrolidone) an insulating property such as inserted into the thin film of polymer has been known (for example, see Non-Patent Document 1).
Fig. 1A and Fig. 1B is, a known device configuration, current density and light emitting characteristics of the present invention are shown. ZnO and the perovskite layer is the electron transport layer, a hole-transporting layer and CBP (4,4 '- N, N' dicarbazolebiphenyl) is sandwiched, between the perovskite layer and the ZnO thin film is inserted in the PVP. As shown in Fig. 1A, PVP was inserted into the carrier confinement, to prevent the pin holes.
Fig. 1B is, the upper 3 of the two characteristic curves is dependent on the change in current density (left vertical axis) is shown, the lower of the two characteristic curves 3 of the luminescence is dependent on the (right vertical axis) is shown. PVP in the absence of the (square mark in the plot), the breakdown of the element when a voltage is applied to emit light is impaired, the light-emitting elements can be inserted into the PVP is maintained until the high brightness.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • TOKYO INSTITUTE OF TECHNOLOGY
  • 発明者(英語)
  • HOSONO, Hideo
  • KIM, Junghwan
  • KUMOMI, Hideya
国際特許分類(IPC)
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