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OPTOELECTRONIC ELEMENT, FLAT DISPLAY IN WHICH SAME IS USED, AND METHOD FOR MANUFACTURING OPTOELECTRONIC ELEMENT

Foreign code F200010222
File No. S2018-0688-C0
Posted date Oct 28, 2020
Country WIPO
International application number 2019JP023604
International publication number WO2020008839
Date of international filing Jun 14, 2019
Date of international publication Jan 9, 2020
Priority data
  • P2018-126332 (Jul 2, 2018) JP
Title OPTOELECTRONIC ELEMENT, FLAT DISPLAY IN WHICH SAME IS USED, AND METHOD FOR MANUFACTURING OPTOELECTRONIC ELEMENT
Abstract Provided is an optoelectronic element in which leak current is suppressed, and good photoluminescence properties are obtained at a low voltage. In this optoelectronic element, an active layer containing inorganic particles, and an oxide semiconductor conductive layer containing at least zinc (Zn), silicon (Si), and oxygen (O), are laminated.
Outline of related art and contending technology BACKGROUND ART
Is a flat display, low-molecular or polymer organic light emitting material (polymer) organic EL (electroluminescence) used in the display element is used as a. Organic light-emitting material, has a high quantum efficiency, a large substrate is easily formed on the film to be an advantage, characteristic deterioration caused by the influence of oxygen and moisture, the emission spectral half width (FWHM: Full Width at Half Maximum) a problem that wide. Further, the high resistivity of the organic materials, leads to an increase in operating voltage of the EL element, which is problematic in higher power consumption. The organic EL element of the improved chemical stability in order to lower the operating voltage, the amorphous C12A7 is used as an electron injection layer, an electron transport layer is configured to use an amorphous ZnO-SiO2 has been proposed (for example, see Patent Document 1).
In recent years, the active layer, and a perovskite-type halogen compound, an inorganic material such as quantum dots which has been actively studied. The above-described inorganic EL material is, compared to organic materials, while having high quantum efficiency equivalent to the chemical stability and low cost is an advantage that the synthesis is possible.
Perovskite halide layer for supplying electrons efficiently into the electron transport layer, the ZnO nanoparticles are generally used. However, such as ZnO nanoparticles are surface ligand complex such as high manufacturing cost due to the use of synthetic processes. Further, a thin film, pin holes are generated between the particles and the particles easily, the surface roughness is large, becomes a cause of leak current or short circuit.
The pinhole can be suppressed and for flattening a surface, and between the ZnO layer of a perovskite layer, polyvinylpyrrolidone (PVP: polyvinylPyrrolidone) an insulating property such as inserted into the thin film of polymer has been known (for example, see Non-Patent Document 1).
Fig. 1A and Fig. 1B is, a known device configuration, current density and light emitting characteristics of the present invention are shown. ZnO and the perovskite layer is the electron transport layer, a hole-transporting layer and CBP (4,4 '- N, N' dicarbazolebiphenyl) is sandwiched, between the perovskite layer and the ZnO thin film is inserted in the PVP. As shown in Fig. 1A, PVP was inserted into the carrier confinement, to prevent the pin holes.
Fig. 1B is, the upper 3 of the two characteristic curves is dependent on the change in current density (left vertical axis) is shown, the lower of the two characteristic curves 3 of the luminescence is dependent on the (right vertical axis) is shown. PVP in the absence of the (square mark in the plot), the breakdown of the element when a voltage is applied to emit light is impaired, the light-emitting elements can be inserted into the PVP is maintained until the high brightness.
Scope of claims (In Japanese)[請求項1]
 無機粒子を含む活性層と、
 少なくとも亜鉛(Zn)と、珪素(Si)と、酸素(O)を含む酸化物半導体層と、
が積層された光電子素子。

[請求項2]
 前記活性層と前記酸化物半導体導層の電気的接合がオーミック性である請求項1に記載の光電子素子。

[請求項3]
 前記酸化物半導体層の層平均組成比Zn/(Si+Zn)は、0.7<Zn/(Si+Zn)<0.85である請求項1または2に記載の光電子素子。

[請求項4]
 前記活性層の少なくとも一方の側に配置される透明電極、
をさらに有し、前記酸化物半導体層は、前記活性層と前記透明電極の間に配置される電子伝導層である、請求項1乃至3のいずれか1項に記載の光電子素子。

[請求項5]
 前記活性層の少なくとも一方の側に配置される多層構造の透明電極、
をさらに有し、前記酸化物半導体層は、前記透明電極の前記多層構造の一部である、請求項1乃至3のいずれか1項に記載の光電子素子。

[請求項6]
 前記透明電極は、第2の酸化物半導体、金属薄膜、及び第1の酸化物半導体がこの順で積層されており、前記酸化物半導体層は、前記第1の酸化物半導体として前記活性層とオーミック接合される、請求項5に記載の光電子素子。

[請求項7]
 前記無機粒子は、量子閉じ込め効果を有する量子ドットである請求項1乃至6のいずれか1項に記載の光電子素子。

[請求項8]
前記無機粒子は、ハロゲン化合物の粒子である請求項1乃至6のいずれか1項に記載の光電子素子。

[請求項9]
 前記ハロゲン化合物の粒子は、ペロブスカイト構造を有する粒子である請求項8に記載の光電子素子。

[請求項10]
 前記酸化物半導体層は、Zn-Si-Oのマトリクス中にZnOの結晶粒が分散したコンポジット材料、もしくはZn-Si-Oの非晶質の層である請求項1乃至9のいずれか1項に記載の光電子素子。

[請求項11]
 前記活性層は発光層であり、前記酸化物半導体層は電子注入と電子輸送の少なくとも一方を行う、請求項1乃至10のいずれか1項に記載の光電子素子。

[請求項12]
 前記活性層は受光層であり、前記酸化物半導体層は電子引抜きと電子輸送の少なくとも一方を行う、請求項1乃至10のいずれか1項に記載の光電子素子。

[請求項13]
 請求項11に記載の光電子素子がアレイ状に配置された素子アレイと、
 前記素子アレイを駆動する駆動部と、
を有する平面ディスプレイ。

[請求項14]
 ハロゲン化合物または量子閉じ込め効果を有する量子ドットを分散させた溶媒を塗布して活性層を形成する工程と、
 前記活性層と、少なくとも亜鉛(Zn)と珪素(Si)と酸素(O)を含む酸化物半導体層とを積層する工程と、
を含む光電子素子の製造方法。
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • TOKYO INSTITUTE OF TECHNOLOGY
  • Inventor
  • HOSONO, Hideo
  • KIM, Junghwan
  • KUMOMI, Hideya
IPC(International Patent Classification)
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