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Nanogap electrode, method for producing same and nanodevice having nanogap electrode NEW

外国特許コード F200010271
整理番号 J1035-01TW
掲載日 2020年11月9日
出願国 台湾
出願番号 108106917
公報番号 201945274
出願日 平成31年2月27日(2019.2.27)
公報発行日 令和元年12月1日(2019.12.1)
優先権データ
  • 特願2018-038092 (2018.3.2) JP
発明の名称 (英語) Nanogap electrode, method for producing same and nanodevice having nanogap electrode NEW
発明の概要(英語) This nanogap electrode comprises: a first electrode which has a first electrode layer and a first metal particle that is arranged on one end of the first electrode layer; and a second electrode which has a second electrode layer and a second metal particle that is arranged on one end of the second electrode layer. The first metal particle and the second metal particle are arranged so as to face each other at a distance; the maximum width from one end to the other end of the first metal particle and the second metal particle is 20 nm or less; and the distance between the first metal particle and the second metal particle is 10 nm or less.
従来技術、競合技術の概要(英語) Background of the Invention]
Field of the invention The present invention relates to an electrode having a gap spacing on a nanometer scale and a method of making the same, and to a nanometer device having a nanometer gap electrode.
[Prior Art]
In the semiconductor product circuit, the molar law ( Moore 's law ) has been followed to increase the product degree as an exponential function. However, Micro-refinement techniques of semiconductor bulk circuits are said to have gradually approached the limits. In the face of the limits of such technological advances, studies have been developed to implement brand-new electronic devices using the bottom-up ( bottom-up ) instead of the top-down ( top-down ) technique, which constitutes the device from molecules defined by the atoms or structures of the smallest unit of material, which is refined by processing the material. For example, a study has been developed using a nanometer gap electrode with a self-stopping function electroless plating, a nanometer device with metallic nanometer particles disposed between the nanometer gap electrodes (refer to Non-Patent Document 1 ~ 15.).
'Non-Patent Document' Non-Patent Document 1 : Victor M. Serdio, Shuhei Takeshita, Yasuo Azuma, Toshiharu Teranishi, : Victor M. Serdio Yutaka Majima , " Self-terminated Nanogap Electrodes by Electroless Gold Plating " , 61 st Society of Applied Physics Spring Colloquium , 17p-F11-10 , ( 2014) Non-patent Document 2: Big Marsh, Toshikono, Euclidean, "Manufacture of a narrow electrode width Nemi slit electrode (The electrode web and the base electrode are permanently connected to the electrode ) " , 62 th Society of Applied Physics Spring Colloquium , 14p-A20-6 , ( 2015) Non-Patent Document 3: The Village of Himura will be Himori, Toshikang, and Hishimoto, "Initial electrode film thickness dependence of electroless gold gap electrodes (Non-electrolytic gold loss eternity of electrodes and initial electrode film thickness dependence ) " , No.63 Applied Physics Society spring lecture session lecture set , 21a-S323-8 , ( 2016) Non-patent Document 4 : Pipit Uky Vivitasari1, Masanori Sakamoto, Toshiharu Teranishi Yutaka Majima , " Molecular Single-Electron Transistor Device using Sn-Porphyrin Protected Gold Nanoparticles " , 63 th Society of Applied Physics spring Colloquium Proceedings , 21a-S323-9 , ( 2016) Non-Patent Document 5 : Chun Ouyang, Yousoo Kim, 5 Kohei Hashimoto, Hayato Tsuji, Eiichi Nakamura, Yutaka Majima , " Coulomb Staircase on Rigid Carbon-bridged Oligo ( phenylenevinylene ) between Electroless Au Plated Nanogap Electrodes " , Proceedings of the 63 st spring academic lecture of the Institute of Applied Physics, 21a-S323-11 , ( 2016) Non-patent Document 6 : Yoonyoung Choi, " Single-Electron Transistors made by Pt-based Narrow Line Width Nanogap Electrodes " , 77 st Society of Applied Physics Autumn Colloquium Proceedings , 13a-C42-2 , ( 2016) Non-patent Document 7: Orientale, Grand Marsh, Sakamoto Athens, Temple Sicily, Eushima Fong, "Nemi slit electrode shape dependence of gate capacitance in a nemi particle single electron crystal (Particle aneurysm of aneurysm of aneurysm of aneurysm of aneurysm and aneurysm of aneurysm of aneurysm of aneurysm of aneurysm of aneurysm of eurysm of aneurysm 13a-C42-3 , ( 2016) Non-patent Document 8 : Yoon Young Choi, " Study of Single-Electron Transistor based on Platinum Nanogap Electrodes " , KJF International Conference on Organic Materials for Electronics and Photonics , PS - 004 , ( 2016) Non-patent Document 9 : Yoon Young Choi, " Robust Pt-based Nanogap Electrodes for Single-Electron Transistors " , Proceedings of the 64 st spring academic lecture of the Institute of Applied Physics, 14p-E206-7 , ( 2017) Non-patent Document 10 : Ain Kwon, Yoon Young Choi, " Au Electroless-Plated Nanogap Electrodes on Pt Surface " , Proceedings of the 64 st Society of Applied Physics spring Colloquium , 14p-E206-8 , ( 2017) Non-Patent Document 11: The Village of Himura, Dongkang, Dongqing Man, Dongshima, "Electroplated Gold on Platinum Nemi Gap Electrode (Electrolytic Gold on White Gold Nemi Gold Nemi Gum Nemi Gum Nemi Gum Nemi Gum Gum Nemi Gum Gum Nemi Gum Nemi Gum Gum Gum Nemi Gum Gum Gum 64 Applied Physics Society Spring Colloquium Conference Comments , 15p-P5-3 , ( 2017 Year) Non-Patent Document 12: Fujimi Gum Gimi Gimi Gimi Gimi. Chun Ouyang, Hashimoto Kamping, the brave, the Chinese, the Chinese , " the carbon crosslinked oligostyrenic single molecule electrocrystal (the carbon bridge, the left corner of the Bridge, the bridgehead, the bridgehead ) " , the bridgehead. Lecture at the 64 st Applied Physics Society spring Colloquium , 14a-E206-2 Non-Patent Document 13: Pushkin, Seung Joo Lee, Tsukata, Takashi, Nagasaki, , " Electrical conduction of quinone-type fused ring oligosilicon, uh, single-molecule device (equal use of the parasite of the parasite of the parasite of the parasite of the parasite of the parasite of the parasite of the penasite of the 64 st Society of Applied Physics, Proceedings of the spring Colloquet of the Colloquet of the Colloquium of the spring 14a-E206-3 , ( 2017) Non-patent Document 14 : Pipit Uky Vivitasari, Ain Kwon, " Gate Oscillation of Chemically Assembled Single-Electron Transistor Using 2 nm Au Nanoparticle " , 78 st Society of Applied Physics Colloquium Proceedings , 7a-PB1-4 , ( 2017) Non-Patent Document 15 : Victor M. Serdio V.. Yasuo Azuma, Taro Muraki, " Robust nanogap electrodes by self-terminating electroless gold plating " , Nanoscale , ( 2012 ) , 4 , p.7161
[Inventory]
One of the objects of the present invention is: more stable to heat, more precisely to control the spacing of the gap portions of the nanometer gap electrodes (the gap spacing). And, It is an object of the present invention to: provide a nanometer slit electrode which is effectively operated by an electric field formed in the gap portion by a gate electrode.
One embodiment of the present invention relates to a nanometer slit electrode, comprising a 1 -th electrode having a 1 -th electrode layer and a 1 -th metal particle disposed at an end of the 1 -th electrode layer, and a 2 -th electrode having a 2 -th electrode layer and a 2 -th metal particle disposed at an end of the 2 -th electrode layer. 1 The metal particles are arranged opposite the 2 th metal particles and have a gap, the 1 th metal particles and the 2 th metal particles have a width from one end to the other of 20 nm or less, The gap between the 1 th metal particles and the 2 th metal particles has a length of 10 nm or less.
One embodiment of the present invention relates to a method of making a nanometer slit electrode, which comprises: forming a 1 th electrode layer and a 2 th electrode layer on a substrate having an insulating surface in such a manner that one end thereof is opposite and with a gap, immersing a substrate having a 1 th electrode layer and a 2 th electrode layer in an electroless plating solution having a reducing agent mixed in a solution containing metal ions, forming metal particles on at least the end portions of the 1 th electrode layer and 2 electrode layer, respectively. Forming a metal bond with the metal contained in the electroless plating solution comprising: forming the 1 -th electrode layer and 2 -th electrode layer, growing the width of the metal particles from one end to the other to a size of 20 nm or less, forming the length of the gap between the metal particles formed at the end of the 1 -th electrode layer and the metal particles formed at the end of the 2 -th electrode layer to a size of 10 nm or less.
One embodiment of the present invention relates to a nanometer device, comprising: a 1 -th electrode having a 1 -th electrode layer and 1 -th metal particles disposed at one end of the 1 -th electrode layer, a 2 -th electrode having a 2 -th electrode layer and 2 -th metal particles disposed at one end of the 2 -th electrode layer, and metallic nanometer particles or functional molecules. The 1 th electrode and the 2 th electrode are arranged in such a way that the 1 th metal particle is opposite the 2 th metal particle and have a gap, The metal nanomies or functional molecules are arranged in the gap between the 1 th metal particle and the 2 th metal particle, The width of the 1 th metal particle and the 2 th metal particle from one end to the other is 20 nm , The length of the gap between the 1 th metal particle and the 2 th metal particle is 10 nm or less.
According to one embodiment of the present invention, in a nanometer slit electrode having metal particles, self-stopping function is exhibited by forming metal particles by electroless plating, the width of the metal particles from one end to the other can be made 20 nm or less, while the gap portions are spaced 10 nm or less.
[Embodiment]
An embodiment of the present invention will now be described with reference to drawings and the like,. However, the present invention can be implemented in a variety of different states, without being limited by the description of the implementation modes of the following examples. The drawings are intended to make the description more clear, in the case of a schematic representation of the width, thickness, shape, etc. of the various parts compared to the actual state, but ultimately as an example, are not intended to limit the interpreter of the present invention. And, In this specification and in the figures, sometimes the same components as those already described above with respect to the figures that have been presented, the same symbols (or the symbols a, b, etc. after the numbers ) , will be omitted in due course. Moreover, the reference to the components "the words 1 ",", 2 ", are inexpensive markings to distinguish the components, without any additional meaning unless otherwise specified.
In this specification, a so-called nanometer slit electrode, is defined as having a gap portion (a gap portion) between a pair of electrodes and a gap length of the gap portion (a gap length) of 10 nm or less, such as 1 nm ~ 10 nm.
In this specification, a so-called nanometer device, is defined as a device comprising a configuration of nanometer slit electrodes.
Article 1
Brief description of the drawings [0013] a configuration and method of making a type dependent nanometer slit electrode in accordance with one embodiment of the present invention will now be described with reference to the drawings.
1-1 . Structure of Nemi gap electrodes
Fig. 1 A Shows a top view of a nanometer slit electrode 100 associated with the present embodiment mode, Fig. 1 B Shows an enlarged view of a region R surrounded by a dashed line, Fig. 1 C Shows a cross-sectional structure corresponding to between A1-A2. Structure for the nanometer gap electrode 100, In the following description, reference is made to these drawings.
Nanometer gap electrode 100, The 1 th electrode 102 a and 2 electrode 102 b are arranged at their ends opposite and with gaps. Fig. 1 A
特許請求の範囲(英語) [claim1]
1. A nanometer slit electrode, characterized by, comprising: th 1 electrode, having a 1 th 1 electrode layer and a 1 th 1 metal particle; disposed at one end of said 1 th 1 electrode layer and 2 electrode, having a 2 th 2 electrode layer and a 2 th 2 metal particle; disposed at an end of said 2 th 2 electrode layer. Wherein the aforementioned 1 th metal particle is disposed opposite the aforementioned 2 th metal particle and has a gap, The width from one end to the other of the aforementioned 1 th metal particle and the aforementioned 2 th metal particle is 20 nm or less, The gap between the aforementioned 1 th metal particle and the aforementioned 2 th metal particle is 10 nm or less in length.

[claim2]
2. The nanometer gap electrode, as claimed in claim 1 wherein the surface of the aforementioned 1 th electrode and the aforementioned 2 th electrode comprises a plurality of other metal particles in addition to the aforementioned 1 th metal particles and the aforementioned 2 th metal particles, The aforementioned 1 th metal particles and the aforementioned 2 th metal particles on the surface of the 1 th electrode and the aforementioned 2 th electrode, are separated from the aforementioned plurality of other metal particles without contact.

[claim3]
3. The nanometer slit electrode, as claimed in claim 1 or 2, wherein the aforementioned 1 th metal particles and the aforementioned 2 th metal particles are hemispherical.

[claim4]
4. The nanometer gap electrode, as claimed in claim 1 or 2 wherein the surface self-diffusion coefficient of the 1 th metal forming the aforementioned 1 th electrode layer and the aforementioned 2 th electrode layer, is less than the surface self-diffusion coefficient of the 2 th metal forming the aforementioned 1 th metal particles and the aforementioned 2 th metal particles.

[claim5]
5. The nanometer slit electrode, as claimed in claim 4, wherein the surface self-diffusion coefficient of the aforementioned 2 th metal of the surface where the aforementioned 1 th metal is bonded to the aforementioned 2 th metal, is smaller than the surface self-diffusion coefficient of the 2 th metal.

[claim6]
6. The nanometer gap electrode, of claim 4 wherein said 1 th metal is alloyed with said 2 th metal system.

[claim7]
7. The nanometer gap electrode, as claimed in claim 6 wherein said 1 th metal particle and said 2 th metal particle are solid solutions of said 1 th metal and said 2 th metal.

[claim8]
8. The nanometer gap electrode of claim 4 wherein said 1 th metal is platinum, and said 2 th metal is gold.

[claim9]
9. The nanometer gap electrode, as claimed in claim 4 wherein said 1 th electrode layer and said 2 th electrode layer comprise a titanium layer disposed on an insulating surface and a platinum layer over said titanium layer.

[claim10]
10. The nanometer slit electrode, as claimed in claim 1 wherein the width of the aforementioned 1 th electrode layer and the aforementioned end portion of the aforementioned 2 th electrode layer is 20 nm or less.

[claim11]
11. The nanometer gap electrode, as claimed in claim 1 wherein the film thickness of one end of said 1 th electrode layer and said 2 th electrode layer is 20 nm or less.

[claim12]
12. A method of making a Nemi slit electrode, characterized by comprising: forming a 1 th electrode layer and a 2 th electrode layer; on a substrate having an insulating surface opposite one end thereof and having a gap, and immersing a substrate having the 1 th electrode layer and the 2 th electrode layer formed in an electroless plating solution having a reducing agent mixed in an electrolyte containing metal ions, forming metal particles; on at least end portions of the 1 th electrode layer and the 2 th electrode layer, respectively. Wherein the metal forming the aforementioned 1 th electrode layer and the aforementioned 2 th electrode layer are made to form a metal bond with the metal contained in the aforementioned electroless plating solution, The width of the aforementioned metal particles from one end to the other end is made to grow to a size of 20 nm or less, The length of the gap between the metal particles formed at the end of the aforementioned 1 th electrode layer and the metal particles formed at the end of the aforementioned 2 th electrode layer is made to be 10 nm or less.

[claim13]
13. A method of manufacturing a nanometer slit electrode as claimed in claim 12, wherein a plurality of metal particles are formed discretely on the surfaces of the aforementioned 1 th electrode layer and the aforementioned 2 th electrode layer.

[claim14]
14. The method of making a nanometer slit electrode as claimed in claim 12 or 13, wherein the aforementioned metal particles are formed into hemispherical shapes.

[claim15]
15. The method for producing a nanometer slit electrode as claimed in claim 12 or 13, wherein the aforementioned 1 th electrode layer and the aforementioned 2 th electrode layer, are electroplated with an electroless plating solution containing gold ions by forming the aforementioned 1 th electrode layer and the aforementioned 2 th electrode layer from platinum.

[claim16]
16. The method of making a nanometer gap electrode as claimed in claim 15, wherein the aforementioned metal particles are formed from a solid solution of platinum and gold.

[claim17]
17. A method of manufacturing a nanometer slit electrode as claimed in claim 12, wherein the width of the end portions of the aforementioned 1 th electrode layer and the aforementioned 2 th electrode layer is formed to be 20 nm or less.

[claim18]
18. A method of manufacturing a nanometer slit electrode as claimed in claim 12, wherein the film thickness of the aforementioned 1 th electrode layer and one end portion of the aforementioned 2 th electrode layer are formed to be 20 nm or less.

[claim19]
19. A method of manufacturing a nanometer slit electrode as claimed in claim 12, wherein the surfaces of the 1 th electrode layer and the 2 th electrode layer are treated with an acid before immersing the substrate having the 1 th electrode layer and the 2 th electrode layer formed in the electroless plating solution,.

[claim20]
20. A nanometer device, characterized by comprising: a 1 th electrode, having a 1 th electrode layer and a 1 th metal particle disposed at an end of said 1 th electrode layer; th electrode, having a 2 th electrode layer and a 2 th metal particle disposed at an end of said 2 th electrode layer; and a metallic nanometer particle or functional molecule; wherein said 1 th electrode and said 2 th electrode are disposed in a manner opposite to said 1 th metal particle and having a gap, The aforementioned metallic nano-particles or the aforementioned functional molecules are arranged in the gap between the aforementioned No.1 metallic particles and the aforementioned No.2 metallic particles, The aforementioned No.1 metallic particles and the aforementioned No.2 metallic particles have a width from one end to the other of 20 nm or less, The gap between the aforementioned No.1 metallic particles and the aforementioned No.2 metallic particles has a length of 10 nm or less.

[claim21]
21. A nanometer device as claimed in claim 20, having an insulating layer, disposed above said 1 th electrode and said 2 th electrode, embedded with said metallic nanometer particles or said functional molecules.

[claim22]
22. A nanometer device, as claimed in claim 21 comprising a 3 th electrode, arranged adjacent to said 1 th metal particle and said gap portion of said 2 th metal particle, insulated from said 1 th metal particle and said 2 th metal particle, and coated with said insulating layer.

[claim23]
23. The nanometer apparatus, as claimed in claim 22 comprising a 4 th electrode, arranged adjacent to the aforementioned 1 th metal particle and the gap portion of the aforementioned 2 th metal particle, insulated from the aforementioned 1 th metal particle and the aforementioned 2 th metal particle, opposite to the aforementioned 3 th electrode, and coated with the aforementioned insulating layer.

[claim24]
24. A nanometer device, as claimed in claim 23 having a 5 th electrode, superimposed on said insulating layer with said metallic nanometer particles or functional molecules.

[claim25]
25. The nemeter-apparatus, of claim 20 configured with halogen ions in place of the aforementioned metallic nemeter-particles or functional molecules.

[claim26]
26. The nanometer apparatus, of claim 23 wherein one of said 3 th electrode and said 4 th electrode is used as a floating gate electrode, to control the charge state of said metallic nanometer particles or functional molecules.

[claim27]
27. A bulk circuit, provided on a semiconductor substrate with a nanometer device and an electronic device as claimed in any one of claims 20 or even 26.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • MAJIMA YUTAKA
  • CHOI YOON-YOUNG
  • KWON A-IN
国際特許分類(IPC)
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