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Nanogap electrode and method of making the same, and nano-device having a nanogap electrode NEW

外国特許コード F210010331
整理番号 J1035-01WO
掲載日 2021年2月2日
出願国 アメリカ合衆国
出願番号 202017006437
公報番号 20200395453
出願日 令和2年8月28日(2020.8.28)
公報発行日 令和2年12月17日(2020.12.17)
優先権データ
  • 特願2018-038092 (2018.3.2) JP
  • 2019JP07937 (2019.2.28) WO
発明の名称 (英語) Nanogap electrode and method of making the same, and nano-device having a nanogap electrode NEW
発明の概要(英語) A nanogap electrode in an embodiment according to the present invention includes a first electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, and a second electrode including a second electrode layer and a second metal particle arranged at one end of the second electrode layer. The first metal particle and the second metal particle are arranged opposite to each other with a gap therebetween, and a width from one end to the other end of the first metal particle and the second metal particle is 20 nm or less. The gap between the first metal particle and the second metal particle is 10 nm or less.
従来技術、競合技術の概要(英語) BACKGROUND
Semiconductor integrated circuit has increased the degree of integration exponentially according to Moore's law. However, it is said that the miniaturization technique for semi-conductor integrated circuit is gradually approaching its limits. Faced with the limitations of such technological advances, research has been underway to realize new electronic devices by using bottom-up techniques for constructing devices from molecules in which atoms or structures, which are the smallest units of materials, are defined, rather than top-down techniques for processing and miniaturizing materials. For example, research is underway on nanogap electrodes that utilize the self-terminating function of electroless plating, and nano-devices that place metal nanoparticles between nanogap electrodes.
特許請求の範囲(英語) [claim1]
1. A nanogap electrode comprising:
a first electrode including a first electrode layer and a first metal particle arranged at a tip portion of the first electrode layer;
a second electrode including a second electrode layer and a second metal particle arranged at a tip portion of the second electrode layer;
the first metal particle and the second metal particle are arranged opposite to each other with a gap therebetween;
each of the first electrode layer and the second electrode layer has a uniform width of 20 nm or less to the tip portion and a film thickness of 20 nm or less;
a width from one end to the other end of the first metal particle and the second metal particle is 20 nm or less; and
the gap between the first metal particle and the second metal particle is 10 nm or less.

[claim2]
2. The nanogap electrode according to claim 1, wherein
the first electrode layer and the second electrode layer have an upper surface and a side surface and comprise a first metal,
the first metal particle and the second metal particle comprise a second metal different from the first metal, and
the first metal particle and the second metal particle are in contact with the upper surface and the side surface, respectively.

[claim3]
3. The nanogap electrode according to claim 2, wherein the first metal particle and the second metal particle have a hemispherical shape.

[claim4]
4. The nanogap electrode according to claim 3, wherein a radius of curvature of the first metal particle and the second metal particle are 12 nm or less.

[claim5]
5. The nanogap electrode according to claim 4, wherein the first metal particle is arranged to project from the tip portion of the first electrode layer, and the second metal particle is arranged to project from the tip portion of the second electrode layer.

[claim6]
6. The nanogap electrode according to claim 2, wherein the first metal particle and the second metal particle form a metal bond with the first electrode layer and the second electrode layer, respectively.

[claim7]
7. The nanogap electrode according to claim 1, wherein
a surface of the first electrode layer and the second electrode layer includes a plurality of metal particles other than the first metal particle and the second metal particle, and
the first metal particle, the second metal particle, and the plurality of metal particles are not in contact with each other on the surfaces of the first electrode layer and the second electrode layer, and are separated from each other.

[claim8]
8. The nanogap electrode according to claim 2, wherein the first metal is platinum, and the second metal is gold.

[claim9]
9. A method for manufacturing nano-gap electrode, the method comprising:
forming a first electrode layer and a second electrode layer each having a uniform width of 20 nm or less to the tip portion and a film thickness of 20 nm or less on a substrate having an insulating surface so that one ends of the first electrode layer and the second electrode layer are opposed to each other with a gap therebetween;
dipping the substrate on which the first electrode layer and the second electrode layer are formed in an electroless plating solution in which a reducing agent is mixed into an electrolyte containing metal ions,
forming metal particles one end of each of the first electrode layer and the second electrode layer; and
forming a metallic bond between a first metal forming the first electrode layer and the second electrode layer and a second metal different from the first metal contained in the electroless plating solution, growing the metal particles to a size in which the width from one end to the other end of the metal particles is not more than 10 nm, and forming a gap of 10 nm or less between the metal particles formed at the one end of the first electrode layer and the one end of the second electrode layer.

[claim10]
10. The method according to claim 9, wherein forming the metal particles in contact with a top and a side surfaces of the tip portions of the first electrode layer and the second electrode layer respectively.

[claim11]
11. The method according to claim 10, wherein forming the metal particles into a hemispherical shape.

[claim12]
12. The method according to claim 11, wherein forming a radius of curvature of the metal particles to 12 nm or less.

[claim13]
13. The method according to claim 9, wherein forming a metal bond between the first metal and the second metal at the interface where the first electrode layer and the first metal particle, and the second electrode layer and the second metal particle are in contact with each other.

[claim14]
14. The method according to claim 9, wherein forming a plurality of metal particles other than the first metal particle and the second metal particle on a surface of the first electrode layer and the second electrode layer.

[claim15]
15. The method according to claim 9, wherein forming the first electrode layer and the second electrode layer of platinum, and electroless plating the first electrode layer and the second electrode layer with an electroless plating solution containing gold ions.

[claim16]
16. The method according to claim 15, wherein forming the metal particles in a solid solution of platinum and gold.

[claim17]
17. The method according to claim 9, wherein the electroless plating solution contains L(+)-ascorbic acid, gold, and iodine tincture.

[claim18]
18. The method according to claim 9, wherein the electroless plating solution is diluted 800 times or more.

[claim19]
19. The method according to claim 9, further comprising treating surfaces of the first electrode layer and the second electrode layer with an acid, before dipping the substrate on which the first electrode layer and the second electrode layer with the electroless plating solution.
  • 発明者/出願人(英語)
  • MAJIMA YUTAKA
  • CHOI YOONYOUNG
  • KWON AIN
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
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