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UNIMOLECULAR TRANSISTOR NEW

外国特許コード F210010332
整理番号 J1035-02WO
掲載日 2021年2月2日
出願国 大韓民国
出願番号 20207026925
公報番号 20200125638
出願日 平成31年2月28日(2019.2.28)
公報発行日 令和2年11月4日(2020.11.4)
国際出願番号 JP2019007941
国際公開番号 WO2019168124
国際出願日 平成31年2月28日(2019.2.28)
国際公開日 令和元年9月6日(2019.9.6)
優先権データ
  • 特願2018-038093 (2018.3.2) JP
  • 2019JP07941 (2019.2.28) WO
発明の名称 (英語) UNIMOLECULAR TRANSISTOR NEW
発明の概要(英語) A monomolecular transistor including a first electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, a second electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, a third electrode insulated from the first electrode and the second electrode, a π-conjugated molecule having a π-conjugated skeleton. The first metal particle and the second metal particle face each other. The third electrode is arranged adjacent to the gap in which the first metal particle and the second metal particle face each other, and is spaced from the first metal particle and the second metal particle, the π-conjugated molecule is arranged in a gap between the first metal particle and the second metal particle.
(From US2020395563 A1)
従来技術、競合技術の概要(英語) BACKGROUND ART
A semiconductor integrated circuit achieves remarkable power generation in accordance with advances in miniaturization technology. However, several problems have been surfaced with micronization. For example, various problems have been pointed out, such as an increase in off-leak current due to a short channel effect of a transistor, an increase in gate leak due to thinning of a gate insulating film, an improvement limit in operating speed in a CMOS (Complementary Metal Oxide Semiconductor) structure, an increase in power consumption, and an increase in parasitic capacitance due to densification of wiring.
In confronting with the limitations of the technical advances, research has progressed to realize a new electronic device by using a bottom-up technique or a combination of a bottom-up technique and a top-down technique constituting the device from a molecule in which atoms or structures that are minimum units of a substance are defined, rather than a top-down technique for processing and refining a material. For example, studies have been conducted on nanodevices in which single nanoparticles or single molecules are disposed between gaps using nanogap electrodes having a gap length of several nanometers (see non-patent documents 1 to 9).
[Prior Art Documents]
[Non-Patent Documents]
Non-Patent Document 1: Pipit Uky Vivitasari1, Yasuo Azuma, Masanori Sakamoto, Toshiharu Teranishi, Yutaka Majima, "Molecular Single-Electron Transistor Device using Sn-Porphyrin Protected Gold Nanoparticles", 63 Application Pharmacopoeia Counsel Execution, 21a-S323-9, (2016)
Non-Patent Document 2: Chun Ouyang, Yousoo Kim, Kohei Hashimoto, Hayato Tsuji, Eiichi Nakamura, Yutaka Majima, "Coulomb Staircase on Rigid Carbon-bridged Oligo (phenylenevinylene) between Electroless Au Plated Nanogap Electrodes", 63 Application Pharmacopoeia Counteratology Exceeded Prediction, 21a-S323-11, (2016)
Non-Patent Document 3: Yoonyoung Choi, Yasuo Azuma, Yutaka Majima, "Single-Electron Transistors made by Pt-based Narrow Line Width Nanogap Electrodes", Time-77 Application Pharmacopoeia Counterative Execution, 13a-C42-2, (2016)
Non-Patent Document 4: Heishi Yaseo, Onuma Haruto, Sacchamoto Magnori, Daranishi Today, Learch Utaca, "Nanogap Electrode Shape Dependence of Gate Capacity in Nanoparticle Single Electron Transistors", Pharmacopeia Counteratology Defender Prediction of 77 Applications, 13a-C42-3, (2016)
Non-Patent Document 5: Yoon Young Choi, Yasuo Azuma, Yutaka Majima, "Study of Single-Electron Transistor based on Platinum Nanogap Electrodes", KJF International Conference on Organic Materials for Electronics and Photonics, PS-004, (2016)
Non-Patent Document 6: Yoon Young Choi, Yasuo Azuma, Yutaka Majima, "Robust Pt-based Nanogap Electrodes for Single-Electron Transistors", No.64 Applications Legminology Counteratology Execute Prediction, 14p-E206-7, (2017)
Non-Patent Document 7: Eato Yuyang, Chun Ouyang, Hashimoto Gohei, Thredge Hayato, Nakamura H, March Utaka, "Carbon Crosslinked Oligophenylenevinylene Monomolecular Wire Transistor", 64 Application Pharmacopoeia Counteratology Counteratology Exceeded Prediction, 14a-E 206-2, (2017)
Non-Patent Document 8: urayama Schhei, Seung Joo Lee, Toda Tomohiro, Dacano Feed, Cintani Feed, Nojaci Kinco, March Utaca, "Electrical Conductivity of Quinoid-Type Recondensed Oligosirol Monomolecular Device", No.64 Applications Legminology Counteratology Exenforcedative Declaration, 14a-E206-3, (2017)
Non-Patent Document 9: Pipit Uky Vivitasari, Yoon Young Choi, Ain Kwon, Yasuo Azuma, Masanori Sakamoto, Toshiharu Teranishi, Yutaka Majima, "Gate Oscillation of Chemically Assembled Single-Electron Transistor Using 2 nm Au Nanoparticle", No.78 Application Pharmaceutical Pharmacopoeia Execution Pharmacopoeia, 7a-PB1-4, (2017)
特許請求の範囲(英語) [claim1]
1. A solar cell, comprising: a first electrode layer; a first electrode including first metal particles disposed on one end of the first electrode layer; a second electrode including a second electrode layer and second metal particles disposed on one end of the second electrode layer; A third electrode insulated from the first electrode and the second electrode, and a π-conjugated molecule having a π-conjugated backbone, wherein the first electrode and the second electrode are configured such that the first metal particle and the second metal particle face each other, Wherein a width from one end to the other end of the first metal particle and the second metal particle is 10 nm or less, and the third electrode is adjacent to a gap where the first metal particle and the second metal particle oppose each other, and Is disposed to be spaced apart from the first metal particle and the second metal particle, and the π conjugated molecule is disposed in a gap between the first metal particle and the second metal particle.

[claim2]
2. The monomolecular transistor of claim 1, wherein a length of a gap between the first metal particle and the second metal particle is 5 nm or less.

[claim3]
3. The monomolecular transistor of claim 1 or 2, wherein the first electrode layer and the second electrode layer comprise platinum, and the first metal particles and the second metal particles are gold.

[claim4]
4. The monomolecular transistor of claim 1, wherein the length of the π conjugated molecule is less than 5 nm.

[claim5]
5. The monomolecular transistor of claim 1, wherein the π conjugated molecule comprises an element that chemically bonds to the first metal particle or the second metal particle at one end and the other end of a π conjugated skeleton.

[claim6]
6. The composition of claim 5, wherein the π conjugated molecule comprises a methylene group, a perfluoroalkyl group (-(CF2)n-) , an oxomethylene group (-O-(CH2)n-) Or an azaalkyl group (-NH-(CH2)n-) And a second transistor coupled to the first transistor and the second transistor, wherein the first transistor and the second transistor are electrically isolated from each other.

[claim7]
7. The composition of claim 1, wherein the π conjugated molecule is a carbon-bridged oligophenylenevinylene (COPVn (SH)2).

[claim8]
8. The monomolecular transistor of claim 7, wherein the number of units of the carbon-bridged oligophenylenevinylene having a terminal substituted with a thiol group is 1-10.

[claim9]
9. The monomolecular transistor of claim 1, wherein one of the first metal particle and the second metal particle and one end of the π conjugated molecule are chemisorbed.

[claim10]
10. The monomolecular transistor of claim 1, wherein the first metal particle and the second metal particle comprise gold (Au), and sulfur (s) and gold (Au) are chemisorbed with one end of the π conjugated molecule.

[claim11]
11. The monomolecular transistor of claim 10, wherein the other end of the π conjugated molecule is bonded with sulfur (s) and hydrogen (H).

[claim12]
12. The monomolecular transistor of claim 1, wherein the first metal particle and the second metal particle comprise gold (Au), and sulfur (s) and gold (Au) are chemisorbed at both ends of the π conjugated molecule.

[claim13]
13. The monomolecular transistor of claim 1, wherein a resonant tunnel current flows between the first and second electrodes.

[claim14]
14. A monomolecular transistor comprising: a nanogap electrode in which a pair of metal particles are disposed with a gap of 5 nm or less; a functional molecule disposed in the gap between the pair of metal particles; and a gate electrode disposed adjacent to the gap between the pair of metal particles and configured to impart an electric field to the functional molecule, wherein a resonant tunnel current flows between the nanogap electrodes.

[claim15]
15. The monomolecular transistor of claim 14, wherein a width from one end to the other end of the pair of metal particles is 10 nm or less.
[claim16]
16. The monomolecular transistor of claim 14, wherein the functional molecule is a π conjugated molecule.

[claim17]
17. The monomolecular transistor of claim 14, wherein the functional molecule is a π conjugated molecule comprised of a rigid backbone.

[claim18]
18. The monomolecular transistor of claim 16, wherein the π-conjugated molecule has a π-conjugated backbone having carbon (C) bridges.

[claim19]
19. The method of claim 18, wherein the π conjugated molecule is selected from the group consisting of carbon bridged oligophenylenevinylenen (COPVn (SH)2).

[claim20]
20. The monomolecular transistor of claim 19, wherein the number of units of the carbon-bridged oligophenylenevinylene having a terminal substituted with a thiol group is 1-10.

[claim21]
21. The monomolecular transistor of claim 14, 18, or 19, wherein the metal particles are gold (Au), and at least one of the sulfur (s) of the π conjugated molecule and the gold (Au) of the metal particles are chemisorbed.

[claim22]
22. The monomolecular transistor of claim 12 or 14, wherein the backbone portion of the π conjugated molecule and the pair of metal particles are spaced apart by a length along which a tunnel current flows.

[claim23]
23. The monomolecular transistor of claim 12 or 14, wherein a portion where the backbone portion of the π-conjugated molecule and the pair of metal particles are separated by a length in which a tunnel current flows is composed of the group of claim 6 between the π-conjugated backbone and a chemisorbing element.

[claim24]
24. The monomolecular transistor of claim 12 or 14, wherein the backbone of the group of claim 6 extends linearly by forming a crosslinked structure in which both terminals are chemically bonded.

[claim25]
25. The monomolecular transistor of claim 14, wherein when a constant voltage is applied to the gate electrode and one of the nanogap electrodes is set as a source and the other is set as a drain, a current-voltage characteristic changes so that an on/off ratio increases with an increase in temperature.

[claim26]
26. The composition of claim 1, wherein the π conjugated molecule comprises a terminal oxomethylenethiol group (-O-(CH2)n- SH).

[claim27]
27. The monomolecular transistor of claim 1, wherein the conductance in the on state is at least 1 μS.

[claim28]
28. The monomolecular transistor of claim 1, wherein the operating mechanism transitions from the monoelectron transistor to the resonance tunnel transistor.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • MAJIMA Yutaka
  • NAKAMURA Eiichi
  • TSUJI Hayato
  • NOZAKI Kyoko
  • SHINTANI Ryo
  • OUYANG Chun
  • ITO Yuma
  • LEE SeungJoo
国際特許分類(IPC)
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