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Monomolecular transistor NEW

外国特許コード F210010333
整理番号 J1035-02WO
掲載日 2021年2月2日
出願国 アメリカ合衆国
出願番号 202017004622
公報番号 20200395563
出願日 令和2年8月27日(2020.8.27)
公報発行日 令和2年12月17日(2020.12.17)
優先権データ
  • 特願2018-038093 (2018.3.2) JP
  • 2019JP07941 (2019.2.28) WO
発明の名称 (英語) Monomolecular transistor NEW
発明の概要(英語) A monomolecular transistor including a first electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, a second electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, a third electrode insulated from the first electrode and the second electrode, a π-conjugated molecule having a π-conjugated skeleton. The first metal particle and the second metal particle face each other. The third electrode is arranged adjacent to the gap in which the first metal particle and the second metal particle face each other, and is spaced from the first metal particle and the second metal particle, the π-conjugated molecule is arranged in a gap between the first metal particle and the second metal particle.
従来技術、競合技術の概要(英語) BACKGROUND
Semiconductor integrated circuit has made remarkable developments with advances in miniaturization technology. However, some problems are also manifested with the miniaturization. For example, various issues have been pointed out, such as an increase in off-leakage current due to the short-channel effect of the transistor, an increase in gate leakage due to thin film of gate insulating film, an increase in operation rate in CMOS, an increase in power dissipation, and an increase in parasitic capacitance due to the increase in wiring density.
Faced with the limitations of such technological advances, studies are being conducted to realize new electronic devices by bottom-up techniques, or by combining bottom-up techniques and top-down techniques, which are not top-down techniques for processing and miniaturizing materials, but bottom-up techniques for constructing devices from molecules whose atoms and structures, which are the smallest units of matter, are defined. For example, nano-gap electrodes having a gap length of several nanometers have been used to investigate nano-devices in which single nano-particles or single molecules are arranged between the gaps.
特許請求の範囲(英語) [claim1]
1. A monomolecular transistor comprising:
a first electrode including a first electrode layer and a first metal particle arranged at a tip portion of the first electrode layer;
a second electrode including a first electrode layer and a first metal particle arranged at a tip portion of the first electrode layer;
a third electrode insulated from the first electrode and the second electrode;
a π-conjugated molecule having a π-conjugated skeleton;
the first electrode and the second electrode are arranged so that the first metal particle and the second metal particle face each other and are separated from each other;
each of the first electrode layer and the second electrode layer has a uniform width of 20 nm or less to the tip portion and a film thickness of 20 nm or less;
a width of the first metal particle and the second metal particle from a first end to a second end is less than 20 nm;
the third electrode is arranged adjacent to a gap in which the first metal particle and the second metal particle face each other, and is spaced from the first metal particle and the second metal particle; and
the π-conjugated molecule is arranged in a gap between the first metal particle and the second metal particle.

[claim2]
2. The monomolecular transistor according to claim 1, wherein
the first electrode layer and the second electrode layer have an upper surface and a side surface and comprise a first metal,
the first metal particle and the second metal particle comprise a second metal different from the first metal,
the first metal particle and the second metal particle are in contact with the upper surface and the side surface, respectively.

[claim3]
3. The monomolecular transistor according to claim 2, wherein the first metal particle and the second metal particle are hemispherical.

[claim4]
4. The monomolecular transistor according to claim 3, wherein a radius of curvature of the first metal particle and the second metal particle are 12 nm or less.

[claim5]
5. The monomolecular transistor according to claim 4, wherein the first metal particle is arranged to project from the tip portion of the first electrode layer, and the second metal particle is arranged to project from the tip portion of the second electrode layer.

[claim6]
6. The monomolecular transistor according to claim 2, wherein the first electrode layer and the first metal particle, and the second electrode layer and the second metal particle form a metal bond at an interface in contact with each other.

[claim7]
7. The monomolecular transistor according to claim 2, wherein the first metal is platinum and the second metal is gold.

[claim8]
8. The monomolecular transistor according to claim 1, wherein a gap length between the first metal particle and the second metal particle is 5 nm or less.

[claim9]
9. The monomolecular transistor according to claim 1, wherein a length of the π-conjugated molecule is less than 5 nm.

[claim10]
10. The monomolecular transistor according to claim 1, wherein the functional molecule is a π-conjugated molecule composed of a rigid skeleton.

[claim11]
11. The monomolecular transistor according to claim 10, wherein the π-conjugated molecule has a π-conjugated skeleton having a carbon (C) bridge.

[claim12]
12. The monomolecular transistor according to claim 1, wherein the π-conjugated molecule includes an element chemically bonded to the first metal particle or the second metal particle at a first end or a second end of the π-conjugated skeleton.

[claim13]
13. The monomolecular transistor according to claim 1, wherein the π-conjugated molecule includes an alkylene group, a perfluoroalkylene group (—(CF2)n—), an oxyalkylene group (—O—(CH2)n—), or an azaalkylene group (—NH—(CH2)n—) between the π-conjugated skeleton and the element.

[claim14]
14. The monomolecular transistor according to claim 1, wherein the π-conjugated molecule is a carbon-crosslinked oligophenylene vinylene n(COPVn(SH)2) having the terminal substituted with a thiol group.

[claim15]
15. The monomolecular transistor according to claim 14, wherein number of units of the carbon-crosslinked oligophenylene vinylene having the terminal substituted with a thiol group is 1 to 10.

[claim16]
16. The monomolecular transistor according to claim 1, wherein one of the first metal particle and the second metal particle and one end of the π-conjugated molecule are chemically adsorbed.

[claim17]
17. The monomolecular transistor according to claim 14, wherein the first metal particle and the second metal particle comprise gold (Au), and sulfur (S) and gold (Au) are chemically adsorbed at a first end of the π-conjugated molecule.

[claim18]
18. The monomolecular transistor according to claim 17, wherein at a second end of the π-conjugated molecule, sulfur (S) and hydrogen (H) are bonded.

[claim19]
19. The monomolecular transistor according to claim 14, wherein the first metal particle and the second metal particle comprise gold (Au), and sulfur (S) and gold (Au) are chemically adsorbed at both ends of the π-conjugated molecule.

[claim20]
20. The monomolecular transistor according to claim 1, wherein a resonant tunneling current flows between the first electrode and the second electrode.
  • 発明者/出願人(英語)
  • MAJIMA YUTAKA
  • NAKAMURA EIICHI
  • TSUJI HAYATO
  • NOZAKI KYOKO
  • SHINTANI RYO
  • OUYANG CHUN
  • ITO YUMA
  • LEE SEUNGJOO
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
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