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MOLECULAR MEMORY AND METHOD FOR MANUFACTURING MOLECULAR MEMORY

外国特許コード F210010398
整理番号 (S2019-0666-N0)
掲載日 2021年5月7日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2020JP027690
国際公開番号 WO 2021044743
国際出願日 令和2年7月16日(2020.7.16)
国際公開日 令和3年3月11日(2021.3.11)
優先権データ
  • 特願2019-159643 (2019.9.2) JP
発明の名称 (英語) MOLECULAR MEMORY AND METHOD FOR MANUFACTURING MOLECULAR MEMORY
発明の概要(英語) Provided is a molecular memory in which recording is based on the molecular polarization of a monatomic dielectric. The monatomic dielectric comprises: a cluster skeleton 100 having a communication hole 101 and a plurality of stable encapsulation portions 102a, 102b; and a metal ion M. The molecular polarization is activated in a state in which the metal ion is encapsulated in one of the stable encapsulation portions. When an electric field is applied, the metal ion moves to the other stable encapsulation portion in the hole to change the molecular polarization. On the basis of the ionic radius of the metal ion, the recording retention time in the temperature range of -100°C to 100°C is 3.0×10-2 to 9.1×1022 seconds. The molecular memory is used for either volatile memory, non-volatile memory, or storage class memory on the basis of the recording retention time.
従来技術、競合技術の概要(英語) BACKGROUND ART
The ferroelectric material has an electric dipole within the crystal, which is aligned within the crystal even in the absence of an electric field. Ferroelectric materials can control the direction and magnitude of polarization of electric dipoles by the application of an electric field. The change in the direction and magnitude of polarization due to the application of an electric field occurs due to the movement of the ferroelectric domain walls. When the electric field is disconnected, dielectric hysteresis occurs because the ferroelectric domain walls do not completely recover back. Therefore, information can be recorded in the ferroelectric material according to the direction of polarization that remained in the absence of an electric field.
On the other hand, there are single molecular dielectrics that can exhibit ferroelectric properties and behavior with a single molecule. Ferroelectric properties and behaviors indicate the development of dielectric hysteresis and spontaneous polarization. Monomolecular dielectrics exhibit dielectric hysteresis and spontaneous polarization based on slow polarization relaxation phenomena, unlike typical ferroelectric mechanisms of hysteresis development.
One molecular structure used in a monomolecular dielectric is Preyssler polyoxometalate (POM). The Preyssler type POM is a molecular metal oxide cluster having a ring-like structure. The Preyssler type POM is represented by [Mn +: P5W30O110] (15-n)-. Note that the P5W30O110 moiety is a cluster skeleton, and the Mn + moiety is a metal ion embedded in the cluster skeleton. Within the cluster backbone of the Preyssler type POM, there are two stable inclusion parts offset from the center. The ions incorporated into the cluster backbone are stably retained in any of the stable inclusion parts thereof.
For example, Patent Document 1 discloses that molecular metal oxide clusters whose molecular polarization is stably maintained and which are structurally stable can be provided.
Patent Document 2 discloses that a multiferroic material having dysprosium ions in one inclusion part of a cluster skeleton exhibits dielectric hysteresis and magnetic hysteresis with a single molecule.
Patent Document 3 discloses that molecular metal oxide clusters that exhibit molecular polarization function as memory when used as a monomolecular dielectric layer in a field effect transistor.
Non-Patent Document 1 discloses a polyoxometalate molecule in which potassium ions are embedded in a cluster backbone.
Incidentally, there are three types of memory that are frequently found in the market. Volatile memory such as DRAM and SRAM in which storage contents are lost when power is turned off; non-volatile memory such as ROM and flash memory in which contents are retained for a long period of time even when power is turned off; and storage class memory having intermediate properties between the volatile memory and the non-volatile memory. Storage class memories that retain their contents for a short period of time even when power is turned off have attracted attention in recent years as new memories that can realize speeding up and large capacity and that can be produced at low cost.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • HIROSHIMA UNIVERSITY
  • 発明者(英語)
  • NISHIHARA Sadafumi
  • FUJIBAYASHI Masaru
  • INOUE Katsuya
  • SADAKANE Masahiro
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS IT JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN WS ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG

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