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Silicon bulk thermoelectric conversion material

外国特許コード F210010504
整理番号 AF51-01WO
掲載日 2021年7月30日
出願国 中華人民共和国
出願番号 201880081665
公報番号 111527613
出願日 平成30年12月26日(2018.12.26)
公報発行日 令和2年8月11日(2020.8.11)
国際出願番号 JP2018047940
国際公開番号 WO2019131795
国際出願日 平成30年12月26日(2018.12.26)
国際公開日 令和元年7月4日(2019.7.4)
優先権データ
  • 特願2017-249463 (2017.12.26) JP
  • 2018JP47940 (2018.12.26) WO
発明の名称 (英語) Silicon bulk thermoelectric conversion material
発明の概要(英語) Provided is a silicon bulk thermoelectric conversion material for which thermoelectric performance is improved over the prior art by reducing the thermal conductivity of silicon. In the silicon bulk thermoelectric conversion material, the ZT exceeds 0.2 at room temperature with silicon alone. The silicon bulk thermoelectric conversion material has a plurality of silicon grains measuring 1-300 nm,first voids measuring 1-30 nm on average that are present in the plurality of silicon grains and on the surfaces of the silicon grains, and second voids measuring 100-300 nm on average that are present between the plurality of silicon grains. The silicon grains have an aspect ratio of less than 10.
従来技術、競合技術の概要(英語) BACKGROUND ART
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2016-504756
Patent document 2: japanese patent laid-open publication No. 2015-053466
Non-patent document
Non-patent document 1: holchbaum et al, 10.1.2008, Enhancedthermalelectricomponenowinese, 451, 163-167.
特許請求の範囲(英語) [claim1]
1. A silicon bulk thermoelectric conversion material that is a silicon monomer and has a ZT exceeding 0.2 at room temperature.

[claim2]
2. A silicon bulk thermoelectric conversion material comprising:
a plurality of silicon particles having an average of 1nm to 300 nm;
first pores having an average of 1nm or more and 30nm or less, the first pores being present in the plurality of silicon particles and on the surfaces of the silicon particles; and
second pores of 100nm or more and 300nm or less on average, the second pores being present between the plurality of silicon particles,
the aspect ratio of the silicon particles is less than 10.

[claim3]
3. The silicon bulk thermoelectric conversion material according to claim 2,
contains silver particles having an average of 1nm to 30 nm.

[claim4]
4. The silicon bulk thermoelectric conversion material according to claim 1,
the ratio of ZT of the in-plane direction and the out-of-plane direction of the silicon monomer is within 2 times.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • SHIOMI JUNICHIRO
  • KASHIWAGI MAKOTO
  • KODAMA TAKASHI
国際特許分類(IPC)
参考情報 (研究プロジェクト等) CREST Scientific Innovation for Energy Harvesting Technology AREA
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