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Scanning atom probe and analysis method utilizing scanning atom probe

外国特許コード F070001789
整理番号 F070001789
掲載日 2008年1月18日
出願国 アメリカ合衆国
出願番号 33331803
公報番号 20030154773
公報番号 6875981
出願日 平成14年3月22日(2002.3.22)
公報発行日 平成15年8月21日(2003.8.21)
公報発行日 平成17年4月5日(2005.4.5)
国際出願番号 JP2002002802
国際公開番号 WO2002093615
国際出願日 平成14年3月22日(2002.3.22)
国際公開日 平成14年11月21日(2002.11.21)
優先権データ
  • 2001US-60278423 (2001.3.26) US
  • 2002WO-JP02802 (2002.3.22) WO
  • 2003US-10333318 (2003.1.16) US
発明の名称 (英語) Scanning atom probe and analysis method utilizing scanning atom probe
発明の概要(英語) (US6875981)
In a scanning atom probe (100), a surface topography of a specimen (3) is firstly analyzed by a surface topography analyzing unit (20).
In the next place, an extraction electrode (5) is aligned to a desired area to be analyzed of a specimen surface.
In case of analyzing electronic state of the area to be analyzed, negative bias voltage is impressed onto the specimen (3) from a direct current high voltage supply (2) and field emitted electrons are detected by a screen (9).
In case of analyzing atomic arrangement and composition of the area to be analyzed, positive voltage is impressed onto the specimen (3) from the direct current high voltage supply (2) and a pulse generator (1) and positive ions generated by field evaporation are detected by a position sensitive ion detector (11) or a relfectron type mass analyzer (13).
特許請求の範囲(英語) [claim1]
1. An analysis apparatus comprising:
an electrode which scans over a surface of a specimen;
a voltage supply which supplies voltage to the specimen;
an ion detector which detects ions generated by field evaporation when sufficiently high voltage is supplied for atoms of the surface of the specimen to be field evaporated by the voltage supply;
and
a surface topography analyzing unit which analyzes topography of the surface of the specimen,
wherein the surface topography analyzing unit is structured for scanning over the surface of the specimen utilizing the electrode as a probe, and
wherein the electrode is funnel-shaped and has a cusp functioning as the probe at a rim of a hole of a specimen-side apex.
[claim2]
2.
An analysis apparatus as recited in claim 1, characterized in that the surface of the specimen is planate, characterized in that the surface topography analyzing unit searches for a cusp on the surface, characterized in that a position of the electrode is aligned to an apex of the cusp, and characterized in that the ion detector detects the ions field evaporated from the apex of the cusp.
[claim3]
3. An analysis apparatus as recited in claim 1, characterized in that the surface topography analyzing unit is a scanning tunneling microscope.
[claim4]
4. An analysis apparatus as recited in claim 1, characterized in that the surface topography analyzing unit is an atomic force microscope.
[claim5]
5. An analysis apparatus as recited in claim 1, characterized in that the surface topography analyzing unit scans over the surface of the specimen with a probe which can be interchanged with the electrode.
[claim6]
6. An analysis apparatus as recited in claim 1, characterized in that it further comprises a laser which irradiates a laser beam on the specimen so that the atoms of the surface of the specimen might be field evaporated by photo-stimulated field evaporation.
[claim7]
7. An analysis apparatus as recited in any one of claim 1, characterized in that the ion detector comprises a position sensitive ion detector which can analyze positions of the ions generated by the field evaporation.
[claim8]
8. An analysis apparatus as recited in any one of claim 1, characterized in that the ion detector comprises a mass analyzer which can analyze mass of the ions generated by the field evaporation.
[claim9]
9. An analysis apparatus as recited in any one of claim 1, characterized in that it further comprises a projection unit which projects an image by field emitted electrons when the sufficiently high voltage for the electrons of the surface of the specimen to be field emitted is supplied by the voltage supply.
[claim10]
10. An analysis apparatus as recited in claim 9, characterized in that it further comprises a first current meter which measures a current value of electrons among the field emitted electrons, which enter the electrode.
[claim11]
11. An analysis apparatus as recited in claim 9, characterized in that it further comprises a second current meter which measures the current value of electrons among the field emitted electrons, which enter the projection unit.
[claim12]
12. An analysis apparatus as recited in claim 10, characterized in that the position of the electrode is aligned based on the current value measured by the first current meter or the second current meter.
[claim13]
13. An analysis apparatus as recited in claim 11, characterized in that the position of the electrode is aligned based on the current value measured by the second current meter.
[claim14]
14. An analysis method comprising:
acquiring surface topography of a specimen by scanning over a surface of the specimen by using a cusp formed at a rim of a hole of a specimen-side apex of a funnel-shaped electrode as a probe;
aligning the electrode to an apex of a cusp on the surface;
field evaporating the atoms of the surface by supplying positive voltage to the specimen;
and
detecting ions generated by field evaporation.
[claim15]
15. An analysis method as recited in claim 14, characterized in that it acquires three dimensional arrangement of the atoms in the specimen by repeating the processing of field evaporating the atoms and the processing of detecting the ions.
[claim16]
16. An analysis method as recited in claim 14, characterized in that it further comprises:
detecting electrons, which are the electrons of the surface field emitted by supplying negative voltage to the specimen;
and
measuring relativity between a voltage value of the negative voltage and a current value of the electrons when the voltage value is changed.
[claim17]
17. An analysis method as recited in claim 15, characterized in that it further comprises:
detecting electrons, which are the electrons of the surface field emitted by supplying negative voltage to the specimen;
and
measuring relativity between a voltage value of the negative voltage and a current value of the electrons when the voltage value is changed.
  • 発明者/出願人(英語)
  • NISHIKAWA OSAMU
  • KANAZAWA INSTITUTE OF TECHNOLOGY
国際特許分類(IPC)
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