Top > Search of International Patents > Single crystal silicon carbide and method for producing the same

Single crystal silicon carbide and method for producing the same

Foreign code F090002102
File No. F090002102
Posted date May 22, 2009
Country United States of America
Application number 47961401
Gazette No. 20040237879
Gazette No. 7527869
Date of filing Jun 4, 2001
Gazette Date Dec 2, 2004
Gazette Date May 5, 2009
International application number JP2001004708
International publication number WO2002099169
Date of international filing Jun 4, 2001
Date of international publication Dec 12, 2002
Priority data
  • 2001WO-JP04708 (Jun 4, 2001) WO
Title Single crystal silicon carbide and method for producing the same
Abstract (US7527869)
The invention is a high-temperature liquid phase growth method using a very thin Si melt layer and characterized in that there is no need of strict temperature difference control between the growing crystal surface and a raw material supply polycrystal, and control of impurity addition is possible.
The grown single crystal SiC is characterized in that no fine grain boundaries exist therein, the density of micropipe defects in the growth surface is 1/cm2 or less, and the crystal has a terrace of 10 micrometer or more and a multi-molecular layer step as the minimum unit of a three-molecular layer.
Scope of claims [claim1]
1. A silicon carbide single crystal, comprising: a terrace of more than 10 micrometer in width, andno fine grain boundaries of the threading screw dislocation typewhereinthe silicon carbide single crystal is epitaxial to a surface of an on-axis (0001) Si plane of a seed silicon carbide single crystal.
[claim2]
2. A method for the preparation of a single crystal silicon carbide bulk body comprising employing the single crystal silicon carbide according to claim 1 as a surface epitaxial growth layer of the single crystal silicon carbide bulk body.
[claim3]
3. The silicon carbide single crystal according to claim 1, further comprising a group III metal, wherein a p-type conductivity is obtained.
[claim4]
4. The silicon carbide single crystal according to claim 1, further comprising a group V element, wherein a n-type conductivity is obtained.
  • Inventor, and Inventor/Applicant
  • KANEKO TADAAKI
  • ASAOKA YASUSHI
  • SANO NAOKATSU
  • KWANSEI GAKUIN
IPC(International Patent Classification)
U.S. Cl./(Sub)
  • C30B019/04
  • C30B029/36
Please contact us by E-mail or facsimile if you have any interests on this patent.

PAGE TOP

close
close
close
close
close
close