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PHOTOSENSOR AND METHOD FOR MANUFACTURING THE PHOTOSENSOR meetings

Foreign code F100002343
Posted date Dec 15, 2010
Country WIPO
International application number 2009JP067046
International publication number WO 2010/038785
Date of international filing Sep 30, 2009
Date of international publication Apr 8, 2010
Priority data
  • P2008-255374 (Sep 30, 2008) JP
Title PHOTOSENSOR AND METHOD FOR MANUFACTURING THE PHOTOSENSOR meetings
Abstract Disclosed is a photosensor having excellent response to long-wavelength light. Also disclosed is a method for manufacturing the photosensor. The photosensor comprises an electrical conductivity variable material which causes a change in electrical conductivity upon receipt of light, first and second electrodes provided on a light receiving surface of the electrical conductivity variable material, and a current detecting means which detects current generated between the first electrode and the second electrode. The electrical conductivity variable material is formed of a compound having a layered triangle lattice structure containing a rare earth element. The compound has a layered triangle lattice structure represented by (RMbO3-.delta.)n(MaO)m wherein R represents at least one element selected from In, Sc, Y, Dy, Ho, Er, Tm, Yb, Lu, Ti, Ca, Sr, Ce, Sn, and Hf; Ma and Mb independently represent at least one element selected from Ti, Mn, Fe, Co, Cu, Ga, Zn, Al, Mg, and Cd; n is an integer of 1 or more; m is an integer of 0 or more; and .delta. is a real number of 0 to 0.2. In the compound, one or some of R's may be replaced by a positive divalent or lower element.
Scope of claims (In Japanese)
【請求項1】 受光することにより電気伝導度が変化する電気伝導度変化体と、
 前記電気伝導度変化体の受光面に設けた第1電極及び第2電極と、
 前記第1電極と前記第2電極との間に生じた電流を検出する電流検出手段と
を有する光センサであって、
 前記電気伝導度変化体を希土類元素を含有した層状三角格子構造を有する化合物で構成した光センサ。

【請求項2】 前記化合物は、
 Rを、In,Sc,Y,Dy,Ho,Er,Tm,Yb,Lu,Ti,Ca,Sr,Ce,Sn,Hfから選ばれる少なくとも1種類の元素、
 Ma及びMbを、Ti,Mn,Fe,Co,Cu,Ga,Zn,Al,Mg,Cdから重複を許して選ばれる少なくとも1種類の元素、
 nを1以上の整数、
 mを0以上の整数、
 δを0以上0.2以下の実数
として、(RMbO3-δ)n(MaO)mとして表される層状三角格子構造を有する化合物、またはその化合物のRの一部を正二価以下の元素により置換した化合物である請求項1に記載の光センサ。

【請求項3】 前記第1電極と前記第2電極をそれぞれ櫛歯状に設けた請求項1または請求項2に記載の光センサ。

【請求項4】 受光することにより電気伝導度が変化する電気伝導度変化体の受光面に設けた第1電極と第2電極との間に生じた電流を電流検出手段で検出する光センサの製造方法であって、
 前記電気伝導度変化体を希土類元素を含有した層状三角格子構造を有する化合物で形成する工程を有する光センサの製造方法。
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • NATIONAL UNIVERSITY CORPORATION OKAYAMA UNIVERSITY
  • Inventor
  • IKEDA, Naoshi
  • KUBOZONO, Yoshihiro
  • KAMBE, Takashi
IPC(International Patent Classification)
Specified countries AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW(UTILITY MODEL),BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CL(UTILITY MODEL),CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM,DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN,HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PE(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,SE,SI,SK,SM,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)

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