Top > Search of International Patents > MEMORY ELEMENT, METHOD FOR MANUFACTURING THE MEMORY ELEMENT, AND MEMORY DEVICE COMPRISING MEMORY ELEMENT

MEMORY ELEMENT, METHOD FOR MANUFACTURING THE MEMORY ELEMENT, AND MEMORY DEVICE COMPRISING MEMORY ELEMENT meetings

Foreign code F100002344
Posted date Dec 15, 2010
Country WIPO
International application number 2009JP067047
International publication number WO 2010/038786
Date of international filing Sep 30, 2009
Date of international publication Apr 8, 2010
Priority data
  • P2008-255376 (Sep 30, 2008) JP
Title MEMORY ELEMENT, METHOD FOR MANUFACTURING THE MEMORY ELEMENT, AND MEMORY DEVICE COMPRISING MEMORY ELEMENT meetings
Abstract Disclosed is a memory element having low-power consumption. Also disclosed are a method for manufacturing the memory element and a memory device comprising the memory element. The memory element comprises a resistor that causes a change in electric resistance upon the application of voltage and a voltage applying electrode for applying a predetermined voltage to the resistor. The memory device comprises the memory element. The resistor is formed of a compound having a layered triangle lattice structure containing a rare earth element. In particular, the resistor is formed of a compound having a layered triangle lattice structure represented by (RMbO3-.delta.)n(MaO)m wherein R represents at least one element selected from In, Sc, Y, Dy, Ho, Er, Tm, Yb, Lu, Ti, Ca, Sr, Ce, Sn, and Hf; Ma and Mb, which may be same or different, represent at least one element selected from Ti, Mn, Fe, Co, Cu, Ga, Zn, Al, Mg, and Cd; n is an integer of 1 or more; m is an integer of 0 or more; and .delta. is a real number of 0 to 0.2. Alternatively, the resistor may be formed of a compound that is the same compound as described above except that a part of R in the compound has been replaced with a positive divalent or lower element.
Scope of claims (In Japanese)
【請求項1】 電圧を印加することにより電気抵抗が変化する抵抗体と、
 前記抵抗体に所定の電圧を印加するための電圧印加用の電極と
を有するメモリ素子であって、
 前記抵抗体を希土類元素を含有した層状三角格子構造を有する化合物で構成したメモリ素子。

【請求項2】 前記抵抗体が、
 Rを、In,Sc,Y,Dy,Ho,Er,Tm,Yb,Lu,Ti,Ca,Sr,Ce,Sn,Hfから選ばれる少なくとも1種類の元素、
 Ma及びMbを、Ti,Mn,Fe,Co,Cu,Ga,Zn,Al,Mg,Cdから重複を許して選ばれる少なくとも1種類の元素、
 nを1以上の整数、
 mを0以上の整数、
 δを0以上0.2以下の実数
として、(RMbO3-δ)n(MaO)mとして表される層状三角格子構造を有する化合物、またはその化合物のRの一部を正二価以下の元素により置換した化合物である請求項1に記載のメモリ素子。

【請求項3】 前記電圧印加用の電極は2つ1組として前記抵抗体を挟んで対向させて設けるとともに、前記電圧印加用の電極を前記抵抗体の電気抵抗を検出するための電圧検出用の電極と兼用している請求項1または請求項2に記載のメモリ素子。

【請求項4】 前記電圧印加用の電極は、前記抵抗体を構成している前記化合物のc軸方向に離隔させて設けている請求項3に記載のメモリ素子。

【請求項5】 電圧を印加することにより電気抵抗が変化する抵抗体と、
 前記抵抗体に所定の電圧を印加するための電圧印加用の電極と
を有するメモリ素子の製造方法であって、
 前記抵抗体を希土類元素を含有した層状三角格子構造を有する化合物で形成する工程を有するメモリ素子の製造方法。

【請求項6】 電圧を印加することにより電気抵抗が変化する抵抗体と、
 前記抵抗体に所定の電圧を印加するための電圧印加用の電極と
をそれぞれ有する複数のメモリ素子を備えた記憶装置であって、
 前記抵抗体を希土類元素を含有した層状三角格子構造を有する化合物で構成した記憶装置。
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • NATIONAL UNIVERSITY CORPORATION OKAYAMA UNIVERSITY
  • Inventor
  • IKEDA, Naoshi
  • KUBOZONO, Yoshihiro
  • KAMBE, Takashi
IPC(International Patent Classification)
Specified countries AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW(UTILITY MODEL),BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CL(UTILITY MODEL),CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM,DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN,HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PE(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,SE,SI,SK,SM,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)

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