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PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING THE PHOTOELECTRIC CONVERSION ELEMENT meetings

Foreign code F100002345
Posted date Dec 15, 2010
Country WIPO
International application number 2009JP067048
International publication number WO 2010/038787
Date of international filing Sep 30, 2009
Date of international publication Apr 8, 2010
Priority data
  • P2008-255373 (Sep 30, 2008) JP
Title PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING THE PHOTOELECTRIC CONVERSION ELEMENT meetings
Abstract Disclosed is a photoelectric conversion element having a pn junction that can realize an improved photoelectric conversion efficiency. Also disclosed is a method for manufacturing the photoelectric conversion element. An electric conductivity variable material which causes a change in electric conductivity upon the reception of light is provided at the pn junction part. The electric conductivity variable material is formed of a compound having a layered triangle lattice structure represented by (RMbO3-.delta.)n(MaO)m wherein R represents at least one element selected from In, Sc, Y, Dy, Ho, Er, Tm, Yb, Lu, Ti, Ca, Sr, Ce, Sn, and Hf; Ma and Mb, which may be same or different, represent at least one element selected from Ti, Mn, Fe, Co, Cu, Ga, Zn, Al, Mg, and Cd; n is an integer of 1 or more; m is an integer of 0 or more; and .delta. is a real number of 0 to 0.2. Alternatively, the electric conductivity variable material may be formed of a compound that is the same compound as described above except that a part of R in the compound has been replaced with a positive divalent or lower element.
Scope of claims (In Japanese)
【請求項1】 pn接合を有する光電変換素子において、
 受光することにより電気伝導度が変化する電気伝導度変化体をpn接合部分に設けている光電変換素子。

【請求項2】 前記電気伝導度変化体が、
 Rを、In,Sc,Y,Dy,Ho,Er,Tm,Yb,Lu,Ti,Ca,Sr,Ce,Sn,Hfから選ばれる少なくとも1種類の元素、
 Ma及びMbを、Ti,Mn,Fe,Co,Cu,Ga,Zn,Al,Mg,Cdから重複を許して選ばれる少なくとも1種類の元素、
 nを1以上の整数、
 mを0以上の整数、
 δを0以上0.2以下の実数
として、(RMbO3-δ)n(MaO)mとして表される層状三角格子構造を有する化合物、またはその化合物のRの一部を正二価以下の元素により置換した化合物である請求項1に記載の光電変換素子。

【請求項3】 前記電気伝導度変化体をn型電導体として前記pn接合を形成した請求項2に記載の光電変換素子。

【請求項4】 前記pn接合を形成するp型電導体を有機物半導体で構成した請求項3に記載の光電変換素子。

【請求項5】 pn接合を有する光電変換素子の製造方法において、
 受光することにより電気伝導度が変化する電気伝導度変化体をpn接合部分に設ける工程を有する光電変換素子の製造方法。
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • NATIONAL UNIVERSITY CORPORATION OKAYAMA UNIVERSITY
  • Inventor
  • IKEDA, Naoshi
  • KUBOZONO, Yoshihiro
  • KAMBE, Takashi
IPC(International Patent Classification)
Specified countries AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW(UTILITY MODEL),BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CL(UTILITY MODEL),CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM,DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN,HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PE(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,SE,SI,SK,SM,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)

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