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CURVATURE DISTRIBUTION CRYSTAL LENS AND X-RAY REFLECTANCE MEASURING INSTRUMENT UPDATE

外国特許コード F110002677
整理番号 S2007-1113-C0
掲載日 2011年4月7日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2008JP065420
国際公開番号 WO 2009028613
国際出願日 平成20年8月28日(2008.8.28)
国際公開日 平成21年3月5日(2009.3.5)
優先権データ
  • 特願2007-227174 (2007.8.31) JP
発明の名称 (英語) CURVATURE DISTRIBUTION CRYSTAL LENS AND X-RAY REFLECTANCE MEASURING INSTRUMENT UPDATE
発明の概要(英語) A curvature distribution crystal lens is produced by embossing a Ge or Si (110) single crystal plate under a condition of temperature 1°C to 120°C below the melting point when the single crystal plate is a Ge plate and 1°C to 200°C below the melting point when the single crystal plate is a Si plate. The direction in which the crystal lattice face exhibits a maximum curvature is [001] or 30° or less from the [1-10] direction in the (110) plane, and the direction perpendicular thereto is that of the valley. The crystal lattice face is a linear cylindrically or logarithmically curved surface. With this, the integrated reflection intensity and the half width can be uniform in wide ranges. As a result, the incident angel range is wide and the light collection accuracy is high.
従来技術、競合技術の概要(英語) BACKGROUND ART
In the conventional X-ray monochromator, crystal elastically slightly bending, then by polishing so as to obtain a predetermined diffraction uniformly, to perform finish polishing, or conversely, after the polishing of the crystal, deformed by bending. Then, is deformed within the elastic limit of the monochromator crystal is of the type Johansson Johann type, has been put into practical use.
However, the deformation within the elastic limit of the conventional technique in which crystal monochromator X-ray generating method, a large bending curvature is not possible, to only large X line could not be used. In addition, the angular resolution and the integral reflectivity is allowed to be a significant reduction in such a case, a lower yield stress and plastic deformation of the crystal is used as it is processed.
Line for the type of the type Johansson X Johann monochromator, normally, cutting, after polishing, suitable elastic deformation of the fixed or in addition, processing is easy to plastically deform the crystal manufactured by a method.
For example, an ordinary method such as LiF crystal that is easier to a low speed after the plastic deformation is performed by scraping, or attaching a forced into a mold in the elastic deformation is performed. In addition, as described in patent document 1, the inventors of the present invention, mainly a covalent bond to the base of the (100) single crystal Si is used, the plastic deformation at high temperature and high pressure and molded into a push type, the technology for making distribution of the crystalline lens and apparatus of the present invention.
However, by utilizing the elastic deformation in an approach, the elastic deformation of the crystal in the retention stability of the amount of deformation, the problem of aging, and therefore remain within the elastic limit of the deformation, and the angle of view is restricted at an extremely small value. Then, in the case of utilizing plastic deformation, deterioration of the crystallinity by the plastic deformation, significantly increased the half-value width, the integral reflectivity is lowered.
In addition, as described in patent document 1 to the base surface of the (100) Si used in plastic deformation, uniformly curved single crystal can be obtained but, the uniform deformation area is slightly narrower, narrow spectral range of angles of incidence X-ray was found. Therefore, a wide range of angles of incidence than, the focusing accuracy of the curvature distribution crystal lens with high is desired.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • Kyoto University
  • TOHOKU UNIVERSITY
  • 発明者(英語)
  • OKUDA, Hiroshi
  • NAKAJIMA, Kazuo
  • FUJIWARA, Kozo
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IS JP KE KG KM KN KP KR KZ LA LC LK LR LS LT LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PG PH PL PT RO RS RU SC SD SE SG SK SL SM ST SV SY TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ MD RU TJ TM
EPO: AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MT NL NO PL PT RO SE SI SK TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG
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