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CURVATURE DISTRIBUTION CRYSTAL LENS AND X-RAY REFLECTANCE MEASURING INSTRUMENT

Foreign code F110002677
File No. S2007-1113-C0
Posted date Apr 7, 2011
Country WIPO
International application number 2008JP065420
International publication number WO 2009028613
Date of international filing Aug 28, 2008
Date of international publication Mar 5, 2009
Priority data
  • P2007-227174 (Aug 31, 2007) JP
Title CURVATURE DISTRIBUTION CRYSTAL LENS AND X-RAY REFLECTANCE MEASURING INSTRUMENT
Abstract A curvature distribution crystal lens is produced by embossing a Ge or Si (110) single crystal plate under a condition of temperature 1°C to 120°C below the melting point when the single crystal plate is a Ge plate and 1°C to 200°C below the melting point when the single crystal plate is a Si plate. The direction in which the crystal lattice face exhibits a maximum curvature is [001] or 30° or less from the [1-10] direction in the (110) plane, and the direction perpendicular thereto is that of the valley. The crystal lattice face is a linear cylindrically or logarithmically curved surface. With this, the integrated reflection intensity and the half width can be uniform in wide ranges. As a result, the incident angel range is wide and the light collection accuracy is high.
Outline of related art and contending technology BACKGROUND ART
In the conventional X-ray monochromator, crystal elastically slightly bending, then by polishing so as to obtain a predetermined diffraction uniformly, to perform finish polishing, or conversely, after the polishing of the crystal, deformed by bending. Then, is deformed within the elastic limit of the monochromator crystal is of the type Johansson Johann type, has been put into practical use.
However, the deformation within the elastic limit of the conventional technique in which crystal monochromator X-ray generating method, a large bending curvature is not possible, to only large X line could not be used. In addition, the angular resolution and the integral reflectivity is allowed to be a significant reduction in such a case, a lower yield stress and plastic deformation of the crystal is used as it is processed.
Line for the type of the type Johansson X Johann monochromator, normally, cutting, after polishing, suitable elastic deformation of the fixed or in addition, processing is easy to plastically deform the crystal manufactured by a method.
For example, an ordinary method such as LiF crystal that is easier to a low speed after the plastic deformation is performed by scraping, or attaching a forced into a mold in the elastic deformation is performed. In addition, as described in patent document 1, the inventors of the present invention, mainly a covalent bond to the base of the (100) single crystal Si is used, the plastic deformation at high temperature and high pressure and molded into a push type, the technology for making distribution of the crystalline lens and apparatus of the present invention.
However, by utilizing the elastic deformation in an approach, the elastic deformation of the crystal in the retention stability of the amount of deformation, the problem of aging, and therefore remain within the elastic limit of the deformation, and the angle of view is restricted at an extremely small value. Then, in the case of utilizing plastic deformation, deterioration of the crystallinity by the plastic deformation, significantly increased the half-value width, the integral reflectivity is lowered.
In addition, as described in patent document 1 to the base surface of the (100) Si used in plastic deformation, uniformly curved single crystal can be obtained but, the uniform deformation area is slightly narrower, narrow spectral range of angles of incidence X-ray was found. Therefore, a wide range of angles of incidence than, the focusing accuracy of the curvature distribution crystal lens with high is desired.
Scope of claims (In Japanese)請求の範囲 [1]
 Geの(110)単結晶板を高温型押し成型により塑性変形させた曲率分布結晶レンズであって、
 結晶格子面が、最大の曲率を示す方向を[001]または[1-10]方向から(110)面内において30度以内とし、それに直交する方向を谷とする1次元円筒曲面または1次元対数曲面であることを特徴とする曲率分布結晶レンズ。

[2]
 Siの(110)単結晶板を高温型押し成型により塑性変形させた曲率分布結晶レンズであって、
 結晶格子面が、最大の曲率を示す方向を[001]または[1-10]方向から(110)面内において30度以内とし、それに直交する方向を谷とする1次元円筒曲面または1次元対数曲面であることを特徴とする曲率分布結晶レンズ。

[3]
 上記高温型押し成型は、融点より1℃から120℃低い温度条件で行われることを特徴とする請求項1に記載の曲率分布結晶レンズ。

[4]
 上記高温型押し成型は、融点より1℃から200℃低い温度条件で行われることを特徴とする請求項2に記載の曲率分布結晶レンズ。

[5]
 結晶格子面の結晶表面に対する傾きがJohanssonの回折条件を満たすように、結晶表面が研磨されていることを特徴とする請求項1から4の何れか1項に記載の曲率分布結晶レンズ。

[6]
 X線発生源と、
 請求項1から5の何れか1項に記載の曲率分布結晶レンズと、
 位置敏感検出器とを備えたことを特徴とするX線反射率測定装置。

  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • Kyoto University
  • TOHOKU UNIVERSITY
  • Inventor
  • OKUDA, Hiroshi
  • NAKAJIMA, Kazuo
  • FUJIWARA, Kozo
IPC(International Patent Classification)
Specified countries National States: AE AG AL AM AO AT AU AZ BA BB BG BH BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IS JP KE KG KM KN KP KR KZ LA LC LK LR LS LT LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PG PH PL PT RO RS RU SC SD SE SG SK SL SM ST SV SY TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ MD RU TJ TM
EPO: AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MT NL NO PL PT RO SE SI SK TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG
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