METHOD OF MEASURING ELECTRICAL RESISTANCE VALUE OF CORNEAL TRANS-EPITHELIUM
| Foreign code | F110002735 |
|---|---|
| File No. | S2009-1113-N0 |
| Posted date | Apr 11, 2011 |
| Country | WIPO |
| International application number | 2009JP053968 |
| International publication number | WO 2009/110470 |
| Date of international filing | Mar 3, 2009 |
| Date of international publication | Sep 11, 2009 |
| Priority data |
|
| Title | METHOD OF MEASURING ELECTRICAL RESISTANCE VALUE OF CORNEAL TRANS-EPITHELIUM |
| Abstract | This object aims to provide a method in which evaluating a corneal disorder can be quantitatively measured and the corneal disorder applicable to living eyes can be evaluated. This method of measuring an electrical resistance of a cornea trans-epithelium is characterized in that electrodes are disposed on a cornea and a conjunctiva, respectively. The method comprises: (1) a step of disposing a first electrode on the cornea and a second electrode on the conjunctiva, and (2) a step of measuring the electrical resistance by flowing a current between the first electrode and the second electrode. Furthermore, a device for measuring an electricalresistance of a corneal trans-epithelium is provided. |
| Scope of claims |
(In Japanese) 【請求項1】 電極を、角膜上および結膜上に配置することを特徴とする、角膜経上皮電気抵抗の測定方法。 【請求項2】 角膜経上皮電気抵抗を測定する方法であって、 (1)第一の電極を角膜上に配置し、第二の電極を結膜上に配置する工程;および (2)第一の電極と第二の電極との間に電流を流し、電気抵抗を測定する工程 を含む、方法。 【請求項3】 角膜上に配置した電極の周囲が絶縁されている、請求項1または2記載の方法。 【請求項4】 生体眼で実施する、請求項1~3のいずれか一項に記載の方法。 【請求項5】 生体眼の角膜経上皮電気抵抗を測定するための装置であって、 (1)角膜上に配置するのに適した第一の電極、 (2)結膜上に配置するのに適した第二の電極、および (3)第一の電極を絶縁する絶縁体、 を備え、かつ第一の電極と絶縁体とが一体化されている、装置。 【請求項6】 第一の電極と絶縁体とが、電導体を介して一体化されている、請求項5記載の装置。 【請求項7】 さらに第二の電極が一体化されている、請求項5または6に記載の装置。 【請求項8】 絶縁体がシリコンゴムで形成され、且つ絶縁体の角膜との接触面が角膜と同じ曲率を有している、請求項5~7のいずれか1項記載の装置。 【請求項9】 第二の電極がシート状の形態である、請求項5~8のいずれか1項記載の装置。 【請求項10】 電導体がヒアルロン酸又はアテロコラーゲンのゲルである、請求項5~9のいずれか1項記載の装置。 |
|
|
|
|
| IPC(International Patent Classification) | |
| Specified countries | AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW(UTILITY MODEL),BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM(UTILITY MODEL),DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN,HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,SE,SI,SK,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM) |
※
We are looking for any manufacturer or licensee. Please contact us if you are interested in this patent.
Contact Information for " METHOD OF MEASURING ELECTRICAL RESISTANCE VALUE OF CORNEAL TRANS-EPITHELIUM "
- Nagasaki University Intellectual Property Center
- URL: http://www.ipc.nagasaki-u.ac.jp/
-
E-mail:
- Address: 1-14 Bunkyo, Nagasaki City,Japan , 852-8521
- Phone: 81-95-819-2188
- Fax: 81-95-819-2189
※ It is possible to retrieve in J-STORE by the same key word. → Retrieval result of J-STORE
