Top > Search of International Patents > THIN NICKEL FILM, METHOD FOR FORMATION OF THE THIN NICKEL FILM, FERROMAGNETIC NANO-JUNCTION ELEMENT, PROCESS FOR PRODUCING THE FERROMAGNETIC NANO-JUNCTION ELEMENT, THIN METALLIC WIRE, AND PROCESS FOR PRODUCING THE THIN METALLIC WIRE

THIN NICKEL FILM, METHOD FOR FORMATION OF THE THIN NICKEL FILM, FERROMAGNETIC NANO-JUNCTION ELEMENT, PROCESS FOR PRODUCING THE FERROMAGNETIC NANO-JUNCTION ELEMENT, THIN METALLIC WIRE, AND PROCESS FOR PRODUCING THE THIN METALLIC WIRE meetings

Foreign code F110002782
File No. S2009-0593-N0
Posted date Apr 15, 2011
Country WIPO
International application number 2008JP065924
International publication number WO 2009/041239
Date of international filing Aug 28, 2008
Date of international publication Apr 2, 2009
Priority data
  • P2007-248809 (Sep 26, 2007) JP
  • P2008-066929 (Mar 17, 2008) JP
Title THIN NICKEL FILM, METHOD FOR FORMATION OF THE THIN NICKEL FILM, FERROMAGNETIC NANO-JUNCTION ELEMENT, PROCESS FOR PRODUCING THE FERROMAGNETIC NANO-JUNCTION ELEMENT, THIN METALLIC WIRE, AND PROCESS FOR PRODUCING THE THIN METALLIC WIRE meetings
Abstract A thin nickel film is formed, for example, to a thickness of not less than 2 nm, onto a polyethylene naphthalate substrate, for example, by a vacuum deposition method. Two laminates each comprising the thin nickel film formed on the polyethylene naphthalate substrate are provided. These two laminates are joined to each other while crossing in such a manner that an edge of one of the thin nickel film faces an edge of the other thin nickel film to constitute a magnetoresistance effect element using ferromagnetic nano-junction.
Scope of claims (In Japanese)
【請求項1】ポリエチレンナフタレート基板上にニッケル薄膜を成膜するようにしたことを特徴とするニッケル薄膜の形成方法。

【請求項2】上記ニッケル薄膜を真空蒸着法により成膜するようにしたことを特徴とする請求の範囲1記載のニッケル薄膜の形成方法。

【請求項3】上記ニッケル薄膜をビーム蒸着により斜め蒸着することを特徴とする請求の範囲1記載のニッケル薄膜の形成方法。

【請求項4】上記ニッケル薄膜を2nm以上の厚さ成膜するようにしたことを特徴とする請求の範囲1記載のニッケル薄膜の形成方法。

【請求項5】上記ニッケル薄膜の厚さを制御することにより、上記ニッケル薄膜の平均結晶粒径および表面粗さを制御するようにしたことを特徴とする請求の範囲1記載のニッケル薄膜の形成方法。

【請求項6】ポリエチレンナフタレート基板上に成膜されたことを特徴とするニッケル薄膜。

【請求項7】ポリエチレンナフタレート基板上にニッケル薄膜を成膜した積層体を二つ用い、これらの二つの積層体を上記ニッケル薄膜のエッジ同士が互いに対向するように交差させて接合するようにしたことを特徴とする強磁性ナノ接合素子の製造方法。

【請求項8】ポリエチレンナフタレート基板上にニッケル薄膜を成膜した積層体を二つ用い、これらの二つの積層体を上記ニッケル薄膜のエッジ同士が互いに対向するように交差させて接合したことを特徴とする強磁性ナノ接合素子。

【請求項9】ポリエチレンナフタレート基板上にニッケル薄膜を成膜するようにしたことを特徴とする金属細線の形成方法。

【請求項10】ポリエチレンナフタレート基板上に成膜されたニッケル薄膜からなることを特徴とする金属細線。
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY
  • Inventor
  • KAIJU, Hideo / 2-5-5-802, Shinsenri higashimachi, Toyonaka-shi, Osaka, 5600082 (JP)
  • ISHIMARU, Manabu
  • HIROTSU, Yoshihiko
  • ONO, Akito
  • ISHIBASHI, Akira
IPC(International Patent Classification)
Specified countries AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW(UTILITY MODEL),BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM(UTILITY MODEL),DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN,HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME(PETTY PATENT),MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MT,NL,NO,PL,PT,RO,SE,SI,SK,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)
Please contact us by E-mail or facsimile if you have any interests on this patent.

PAGE TOP

close
close
close
close
close
close