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ARSENIC SORBENT AND METHOD FOR REMEDIATING ARSENIC-CONTAMINATED MATERIAL meetings

Foreign code F110002853
File No. S2009-0265-C0
Posted date May 6, 2011
Country WIPO
International application number 2010JP050880
International publication number WO 2010/087297
Date of international filing Jan 25, 2010
Date of international publication Aug 5, 2010
Priority data
  • P2009-017367 (Jan 28, 2009) JP
Title ARSENIC SORBENT AND METHOD FOR REMEDIATING ARSENIC-CONTAMINATED MATERIAL meetings
Abstract Provided are an arsenate sorbent which has good arsenate-sorption performance and high sorbate stability, and a remediation method using the same. Monohydrocalcite formed as a precipitate by mixing an aqueous solution, which contains Mg2+ ion and Ca2+ ion at a ratio (Mg/Ca) of 0.3 or more, with a soluble carbonic acid salt or an aqueous carbonic acid solution, characterized in that the molar ratio [Mg/(Ca+Mg)] in the monohydrocalcite is 0.1 or less.
Scope of claims (In Japanese)
【請求項1】 Mg2+イオンとCa2+イオンとがMg/Ca=0.3以上の割合で含有する水溶液に、可溶性炭酸塩又は炭酸塩の水溶液を混合することで沈殿生成したモノハイドロカルサイトであって、
モノハイドロカルサイト中のモル比でMg/(Ca+Mg)の値が0.1以下であることを特徴とするヒ素収着材。

【請求項2】 モノハイドロカルサイト中のモル比でMg/(Ca+Mg)の値が0.01以下であることを特徴とする請求の範囲1記載のヒ素収着材。

【請求項3】 前記モノハイドロカルサイトは平均一次粒子径900nm以下で平均二次粒子径が30μm以下の粉末であることを特徴とする請求の範囲1又は2記載のヒ素収着材。

【請求項4】 ヒ素換算濃度10ppm以下にした汚染液に請求の範囲1~3のいずれかに記載のヒ素収着材を添加することを特徴とするヒ素汚染物質の浄化方法。
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • National University Corporation KANAZAWA UNIVERSITY
  • Inventor
  • FUKUSHI Keisuke
  • SAKAI Minoru
  • MUNEMOTO Takashi
IPC(International Patent Classification)
Specified countries AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW(UTILITY MODEL),BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CL(UTILITY MODEL),CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM,DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN(UTILITY MODEL),HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PE(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TH(PETTY PATENT),TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,SE,SI,SK,SM,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)
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