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Masking mechanism for film forming apparatus

外国特許コード F110003128
整理番号 A051-93US2
掲載日 2011年6月15日
出願国 アメリカ合衆国
出願番号 65234010
公報番号 20100151128
公報番号 9157144
出願日 平成22年1月5日(2010.1.5)
公報発行日 平成22年6月17日(2010.6.17)
公報発行日 平成27年10月13日(2015.10.13)
国際出願番号 JP2003011950
国際公開番号 WO2004027107
国際出願日 平成15年9月19日(2003.9.19)
国際公開日 平成16年4月1日(2004.4.1)
優先権データ
  • 特願2002-275365 (2002.9.20) JP
  • 2003WO-JP11950 (2003.9.19) WO
  • 2005US-10528265 (2005.3.17) US
発明の名称 (英語) Masking mechanism for film forming apparatus
発明の概要(英語) (US9157144)
It comprises a mask (11) having a first, a second and a third action edge (11a, 11b, 11c), and a drive means for moving the mask (11) relative to a substrate (12) in a uniaxial direction (A) whereby moving the mask at a fixed rate of movement to cause the edges to successively act on an identical substrate region while successively applying different materials thereto forms thin films of three components successively with respective film thickness gradients oriented in three different directions mutually angularly spaced apart by an angle of 120° to allow these films to overlap, thereby forming a ternary phase diagrammatic thin film 13.
特許請求の範囲(英語) [claim1]
1. A method of making thin film using a masking mechanism, the masking mechanism comprising: a mask; and
a means for moving the mask in one direction on a straight line above or beneath a substrate;
wherein the mask has a periphery making an angle of alpha (where 0 deg.<alpha <90 deg.) to the straight line, and a first and a second openings,
the first opening has a first edge making an angle of 30 deg.+alpha to the straight line,
the second opening has a second edge making an angle of -30 deg.+alpha to the straight line,
the periphery, the first edge and the second edge are arranged along the one direction on the straight line, and
further including the steps of:
positioning the periphery of the mask immediately before a region of equilateral triangle where a thin film of ternary phase-diagrammatic system is to be formed in the substrate,
moving the mask linearly in the same direction as the one direction, while a first material is evaporated so that the periphery forms a film-thickness gradient of the first material,
moving the mask linearly and continuously in the same direction as the one direction, until the first edge of the mask is positioned immediately before the region of equilateral triangle where the thin film of ternary phase-diagrammatic system is to be formed in the substrate,
moving the mask linearly in the same or opposite direction to the one direction, while a second material is evaporated so that the first edge of the mask forms a film-thickness gradient of the second material,
moving the mask linearly and continuously in the same direction as the one direction, until the second edge of the mask is positioned immediately before the region of equilateral triangle where the thin film of ternary phase-diagrammatic system is to be formed in the substrate, and
moving the mask linearly in the same or opposite direction to the one direction, while a third material is evaporated so that the second edge of the mask forms a film-thickness gradient of the third material.
[claim2]
2. A method of making thin film using a masking mechanism, the masking mechanism comprising: a mask; and
a means for moving the mask in one direction on a straight line above or beneath a substrate;
wherein the mask has a periphery orthogonal to the straight line, and a first and a second openings,
the first opening has a first edge making an angle of 30 deg. to the straight line,
the second opening has a second edge making an angle of -30 deg. to the straight line,
the periphery, the first edge and the second edge are arranged along the one direction on the straight line, and
further including the steps of:
positioning the periphery of the mask immediately before a region of equilateral triangle where a thin film of ternary phase-diagrammatic system is to be formed in the substrate,
moving the mask linearly in the same direction as the one direction, while a first material is evaporated so that the periphery forms a film-thickness gradient of the first material,
moving the mask linearly and continuously in the same direction as the one direction, until the first edge of the mask is positioned immediately before the region of equilateral triangle where the thin film of ternary phase-diagrammatic system is to be formed in the substrate,
moving the mask linearly in the same or opposite direction to the one direction, while a second material is evaporated so that the first edge of the mask forms a film-thickness gradient of the second material,
moving the mask linearly and continuously in the same direction as the one direction, until the second edge of the mask is positioned immediately before the region of equilateral triangle where the thin film of ternary phase-diagrammatic system is to be formed in the substrate, and
moving the mask linearly in the same or opposite direction to the one direction, while a third material is evaporated so that the second edge of the mask forms a film-thickness gradient of the third material.
[claim3]
3. The method of making a film as set forth in claim 1 or 2, wherein the periphery has a length larger than a side of the region of equilateral triangle,
the first opening has a size larger than the region of equilateral triangle, and
the second opening has a size larger than the region of equilateral triangle.
[claim4]
4. The method of making a film as set forth in claim 1 or 2, wherein the first opening is arranged between the first edge and the second edge, and
the second edge is arranged between the first and second opening.
  • 発明者/出願人(英語)
  • KOINUMA HIDEOMI
  • YAMAMOTO YUKIO
  • MATSUMOTO YUJI
  • TAKAHASHI RYOTA
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
参考情報 (研究プロジェクト等) CREST Single Molecule and Atom Level Reactions AREA
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