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Field-effect transistor

Foreign code F110003145
File No. A111-06US
Posted date Jun 17, 2011
Country United States of America
Application number 95990501
Gazette No. 20020157949
Gazette No. 06833059
Date of filing Nov 13, 2001
Gazette Date Oct 31, 2002
Gazette Date Dec 21, 2004
International application number PCT/JP01/02394
International publication number WO01/73421
Date of international filing Mar 26, 2001
Date of international publication Oct 4, 2001
Priority data
  • P2000-085947 (Mar 27, 2000) JP
Title Field-effect transistor
Abstract An object is to provide a field effect transistor which uses a liquid electrolyte as a gate and which operates stably in the liquid electrolyte.A field effect transistor includes a channel (2) formed of a portion of a hydrogen-terminated surface of a diamond, the portion being exposed to the outside between a gate electrode (3) and a drain electrode (6); and a gate formed of a liquid electrolyte (4) in contact with the exposed portion of the hydrogen-terminated surface of the diamond.
  • Inventor, and Inventor/Applicant
  • Kawarada, Hiroshi; Yokohama [JP]
  • Japan Science and Technology Corporation, [JP]
IPC(International Patent Classification)
Reference ( R and D project ) CREST Function Evolution of Materials and Devices based on Electron/Photon Related Phenomena AREA
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