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Two-dimensional photonic crystal multiplexer/demultiplexer UPDATE

外国特許コード F110003149
整理番号 A111-39WO
掲載日 2011年6月17日
出願国 アメリカ合衆国
出願番号 56684304
公報番号 20060204161
公報番号 7406221
出願日 平成16年8月24日(2004.8.24)
公報発行日 平成18年9月14日(2006.9.14)
公報発行日 平成20年7月29日(2008.7.29)
国際出願番号 JP2004012114
国際公開番号 WO2005022219
国際出願日 平成16年8月24日(2004.8.24)
国際公開日 平成17年3月10日(2005.3.10)
優先権データ
  • 特願2003-307654 (2003.8.29) JP
  • 2004WO-JP12114 (2004.8.24) WO
発明の名称 (英語) Two-dimensional photonic crystal multiplexer/demultiplexer UPDATE
発明の概要(英語) (US7406221)
An object of the present invention is to provide a multiplexer/demultiplexer capable of preventing a decrease in multiplexing/demultiplexing efficiency due to an error in wavelength or due to a crosstalk with other wavelengths.
A two-dimensional photonic crystal having holes 22 cyclically arranged is provided with an input waveguide 23 and an output waveguide 24 .
Located between the two waveguides are two point-like defects 25 and 26 , each consisting of a region devoid of the holes 22 .
From the light including various wavelengths and propagating through the input waveguide 23 , the two point-like defects extract a ray of light having a wavelength determined by the shape of the point-like defects and introduce it into the output waveguide 24 .
Compared with the case where there is only one point-like defect, the above-described construction increases the values of the wavelength spectrum of the extracted light at around the resonance wavelength and decreases the values at the wavelength range far from the resonance wavelength.
Therefore, the increase in the values of the wavelength spectrum at around the resonance wavelength ensures that the light having the desired wavelength can be extracted from the waveguide by a large amount even if the wavelength of the light propagating through the waveguide is erroneously shifted from the resonance frequency.
Occurrence of noises within a wavelength range far from the resonance wavelength and extraction of light having the wavelengths of adjacent channels are also suppressed.
特許請求の範囲(英語) [claim1]
1. A two-dimensional photonic crystal multiplexer/demultiplexer, comprising:
a) a slab-shaped body;
b) a plurality of areas arranged in a lattice pattern with a predetermined cycle within the body, where a refractive index of the areas differs from that of the body;c) a first optical input/output section consisting of a waveguide formed in the body, where the waveguide is made of a linear defect of modified refractive index areas;d) a second optical input/output section formed in the body;
and
e) two point-like defect resonators composed of point-like defects having substantially the same resonance wavelength and arranged in series between the first and second optical input/output sections, each point-like defect consisting of a point-like region devoid of the modified refractive index areas,wherein a value of a coupling ratio defined as mu 2/[(omega 0/2) * (1/Qin+1/Qv)]2 is 0.2.about.10, where omega 0 is a resonance frequency of the point-like defect resonators, Qin is a Q-value between one of the first and second optical input/output sections and the point-like defect resonator closest to the section, Qv is a Q-value between each of the point-like defect resonators and an outside of the crystal, and mu is a mutual coupling coefficient between the point-like defect resonators.
[claim2]
2. The two-dimensional photonic crystal multiplexer/demultiplexer according to claim 1, wherein the second optical input/output section is a point-like defect whose Q-value with respect to an outside of the crystal is smaller than that of the point-like defect resonators.
[claim3]
3. The two-dimensional photonic crystal multiplexer/demultiplexer according to claim 2, wherein at least one of the point-like resonators is a donor type defect formed by eliminating one or more of the modified refractive index areas.
[claim4]
4. The two-dimensional photonic crystal multiplexer/demultiplexer according to claim 1, wherein the second optical input/output section is a waveguide consisting of a linear defect of the modified refractive index areas.
[claim5]
5. The two-dimensional photonic crystal multiplexer/demultiplexer according to claim 4, wherein the second optical input/output section is provided with a second reflecting section for reflecting light whose wavelength equals to the resonance wavelength.
[claim6]
6. The two-dimensional photonic crystal multiplexer/demultiplexer according to claim 1, wherein the first optical input/output section is provided with a first reflecting section for reflecting light whose wavelength equals to the resonance wavelength.
[claim7]
7. The two-dimensional photonic crystal multiplexer/demultiplexer according to claim 5, wherein: the body is composed of plural forbidden band zones, with modified refractive index areas being formed within each forbidden band zones with a different arrangement cycle;
the first optical input/output section or the second optical input/output section is formed so that it passes through all the forbidden band zones;
and
the resonance wavelength of the point-like defect resonators falls within a transmission wavelength band of the waveguide of the first or second optical input/output section in a forbidden band zone including the point-like defect resonators, whereas it is out of the transmission wavelength band of the waveguide in any other forbidden band zone.
[claim8]
8. The two-dimensional photonic crystal multiplexer/demultiplexer according to claim 1, wherein there are exactly two point-like defect resonators;
and the point-like defect resonators and the optical input/output sections are symmetrically arranged with respect to a point.
[claim9]
9. The two-dimensional photonic crystal multiplexer/demultiplexer according to claim 1, wherein one or more of the modified refractive index areas located in a proximity of the point-like defect resonators are shifted from positions determined by the arrangement cycle.
  • 発明者/出願人(英語)
  • NODA SUSUMU
  • ASANO TAKASHI
  • AKAHANE YOSHIHIRO
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • SUMITOMO ELECTRIC INDUSTRIES
国際特許分類(IPC)
米国特許分類/主・副
  • B82Y020/00
  • G02B006/122P
  • G02B006/12M
参考情報 (研究プロジェクト等) CREST Function Evolution of Materials and Devices based on Electron/Photon Related Phenomena AREA
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