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DNA sensor

外国特許コード F110003150
整理番号 A111-43WO
掲載日 2011年6月17日
出願国 アメリカ合衆国
出願番号 66103305
公報番号 20080032294
公報番号 7851205
出願日 平成17年8月4日(2005.8.4)
公報発行日 平成20年2月7日(2008.2.7)
公報発行日 平成22年12月14日(2010.12.14)
国際出願番号 JP2005014283
国際公開番号 WO2006025180
国際出願日 平成17年8月4日(2005.8.4)
国際公開日 平成18年3月9日(2006.3.9)
優先権データ
  • 特願2004-250303 (2004.8.30) JP
  • 2005WO-JP14283 (2005.8.4) WO
発明の名称 (英語) DNA sensor
発明の概要(英語) (US7851205)
A DNA sensor including a p-channel field-effect transistor having as a gate an electrolyte solution and having as a channel a diamond surface which contains a mixture of at least a hydrogen-terminated surface and a surface terminated by an amino group or a molecule with an amino group as an amino termination; a probe DNA constituted of a single-stranded DNA with known nucleotide sequence which is directly immobilized by a linker to the amino termination of the diamond surface; and a target DNA constituted of an unknown single-stranded DNA which is dropped on said diamond surface, wherein the hybridization of the target and probe is ascertained by detecting a shift of the threshold voltage of said p-channel field effect transistor toward positive direction which is due to increase in hole density of the p-channel resulting from doubling the negative electric charge of the phosphate groups upon hybridization.
特許請求の範囲(英語) [claim1]
1. A DNA sensor comprising: (a) a p-channel field-effect transistor having as a gate an electrolyte solution and having as a channel a diamond surface which contains a mixture of at least (i) a hydrogen-terminated surface, and (ii) an oxygen terminated surface, and (iii) a surface terminated by an amino group;
(b) a probe DNA constituted of a single-stranded DNA with known nucleotide sequence which is directly immobilized by a linker to the amino group of said diamond surface; and
(c) a target DNA constituted of an unknown single-stranded DNA which is dropped on said diamond surface,
(d) wherein an identification on whether or not said target DNA is in complementary relationship to said probe DNA is performed by detecting a shift of the threshold voltage of said p-channel field effect transistor toward positive direction, which is due to increase in hole density of the p-channel resulting from doubling the negative electric charge of the phosphate group of a double-stranded DNA produced by hybridization of said probe DNA with said target DNA both constituted of the single-stranded DNA, the hybridization which occurs when said target DNA is in complementary relationship to said probe DNA.
[claim2]
2. The DNA sensor according to claim 1 wherein said linker is divalent or trivalent carboxylic acid.
[claim3]
3. The DNA sensor according to claim 2 wherein the density of said probe DNA is equal to or greater than 1010 cm-2, and the density of said target DNA is from 10-12M to 10-6M.
[claim4]
4. The DNA sensor according to claim 2 wherein said shifting difference of the threshold voltage toward positive direction is detected as a change in the gate voltage under a constant drain current.
[claim5]
5. The DNA sensor according to claim 2 wherein said shifting difference of the threshold voltage toward positive direction is detected as a change in the drain current under a constant gate voltage.
[claim6]
6. The DNA sensor according to claim 2 wherein said shifting difference of the threshold voltage toward positive direction is detected as a change in the drain current under a constant drain voltage.
[claim7]
7. The DNA sensor according to claim 1 wherein said linker is divalent or trivalent aldehyde.
[claim8]
8. The DNA sensor according to claim 7 wherein the density of said probe DNA is equal to or greater than 1010 cm-2, and the density of said target DNA is from 10-12M to 10-6M.
[claim9]
9. The DNA sensor according to claim 7 wherein said shifting difference of the threshold voltage toward positive direction is detected as a change in the gate voltage under a constant drain current.
[claim10]
10. The DNA sensor according to claim 7 wherein said shifting difference of the threshold voltage toward positive direction is detected as a change in the drain current under a constant gate voltage.
[claim11]
11. The DNA sensor according to claim 7 herein said shifting difference of the threshold voltage toward positive direction is detected as a change in the drain current under a constant drain voltage.
[claim12]
12. The DNA sensor according to claim 1 wherein the density of said probe DNA is equal to or greater than 1010 cm-2, and the density of said target DNA is from 10-12M to 10-6M.
[claim13]
13. The DNA sensor according to claim 1 wherein said shifting difference of the threshold voltage toward positive direction is detected as a change in the gate voltage under a constant drain current.
[claim14]
14. The DNA sensor according to claim 1 wherein said shifting difference of the threshold voltage toward positive direction is detected as a change in the drain current under a constant gate voltage.
[claim15]
15. The DNA sensor according to claim 1 wherein said shifting difference of the threshold voltage toward positive direction is detected as a change in the drain current under a constant drain voltage.
  • 発明者/出願人(英語)
  • KAWARADA HIROSHI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
参考情報 (研究プロジェクト等) CREST Function Evolution of Materials and Devices based on Electron/Photon Related Phenomena AREA
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