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DNA sensor

Foreign code F110003150
File No. A111-43WO
Posted date Jun 17, 2011
Country United States of America
Application number 66103305
Gazette No. 20080032294
Gazette No. 7851205
Date of filing Aug 4, 2005
Gazette Date Feb 7, 2008
Gazette Date Dec 14, 2010
International application number JP2005014283
International publication number WO2006025180
Date of international filing Aug 4, 2005
Date of international publication Mar 9, 2006
Priority data
  • P2004-250303 (Aug 30, 2004) JP
  • 2005WO-JP14283 (Aug 4, 2005) WO
Title DNA sensor
Abstract (US7851205)
A DNA sensor including a p-channel field-effect transistor having as a gate an electrolyte solution and having as a channel a diamond surface which contains a mixture of at least a hydrogen-terminated surface and a surface terminated by an amino group or a molecule with an amino group as an amino termination; a probe DNA constituted of a single-stranded DNA with known nucleotide sequence which is directly immobilized by a linker to the amino termination of the diamond surface; and a target DNA constituted of an unknown single-stranded DNA which is dropped on said diamond surface, wherein the hybridization of the target and probe is ascertained by detecting a shift of the threshold voltage of said p-channel field effect transistor toward positive direction which is due to increase in hole density of the p-channel resulting from doubling the negative electric charge of the phosphate groups upon hybridization.
Scope of claims [claim1]
1. A DNA sensor comprising: (a) a p-channel field-effect transistor having as a gate an electrolyte solution and having as a channel a diamond surface which contains a mixture of at least (i) a hydrogen-terminated surface, and (ii) an oxygen terminated surface, and (iii) a surface terminated by an amino group;
(b) a probe DNA constituted of a single-stranded DNA with known nucleotide sequence which is directly immobilized by a linker to the amino group of said diamond surface; and
(c) a target DNA constituted of an unknown single-stranded DNA which is dropped on said diamond surface,
(d) wherein an identification on whether or not said target DNA is in complementary relationship to said probe DNA is performed by detecting a shift of the threshold voltage of said p-channel field effect transistor toward positive direction, which is due to increase in hole density of the p-channel resulting from doubling the negative electric charge of the phosphate group of a double-stranded DNA produced by hybridization of said probe DNA with said target DNA both constituted of the single-stranded DNA, the hybridization which occurs when said target DNA is in complementary relationship to said probe DNA.
[claim2]
2. The DNA sensor according to claim 1 wherein said linker is divalent or trivalent carboxylic acid.
[claim3]
3. The DNA sensor according to claim 2 wherein the density of said probe DNA is equal to or greater than 1010 cm-2, and the density of said target DNA is from 10-12M to 10-6M.
[claim4]
4. The DNA sensor according to claim 2 wherein said shifting difference of the threshold voltage toward positive direction is detected as a change in the gate voltage under a constant drain current.
[claim5]
5. The DNA sensor according to claim 2 wherein said shifting difference of the threshold voltage toward positive direction is detected as a change in the drain current under a constant gate voltage.
[claim6]
6. The DNA sensor according to claim 2 wherein said shifting difference of the threshold voltage toward positive direction is detected as a change in the drain current under a constant drain voltage.
[claim7]
7. The DNA sensor according to claim 1 wherein said linker is divalent or trivalent aldehyde.
[claim8]
8. The DNA sensor according to claim 7 wherein the density of said probe DNA is equal to or greater than 1010 cm-2, and the density of said target DNA is from 10-12M to 10-6M.
[claim9]
9. The DNA sensor according to claim 7 wherein said shifting difference of the threshold voltage toward positive direction is detected as a change in the gate voltage under a constant drain current.
[claim10]
10. The DNA sensor according to claim 7 wherein said shifting difference of the threshold voltage toward positive direction is detected as a change in the drain current under a constant gate voltage.
[claim11]
11. The DNA sensor according to claim 7 herein said shifting difference of the threshold voltage toward positive direction is detected as a change in the drain current under a constant drain voltage.
[claim12]
12. The DNA sensor according to claim 1 wherein the density of said probe DNA is equal to or greater than 1010 cm-2, and the density of said target DNA is from 10-12M to 10-6M.
[claim13]
13. The DNA sensor according to claim 1 wherein said shifting difference of the threshold voltage toward positive direction is detected as a change in the gate voltage under a constant drain current.
[claim14]
14. The DNA sensor according to claim 1 wherein said shifting difference of the threshold voltage toward positive direction is detected as a change in the drain current under a constant gate voltage.
[claim15]
15. The DNA sensor according to claim 1 wherein said shifting difference of the threshold voltage toward positive direction is detected as a change in the drain current under a constant drain voltage.
  • Inventor, and Inventor/Applicant
  • KAWARADA HIROSHI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
Reference ( R and D project ) CREST Function Evolution of Materials and Devices based on Electron/Photon Related Phenomena AREA
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