Top > Search of International Patents > LIQUID ORGANIC SEMICONDUCTOR MATERIAL

LIQUID ORGANIC SEMICONDUCTOR MATERIAL

Foreign code F110003190
File No. AF12-06WO
Posted date Jun 22, 2011
Country WIPO
International application number 2010JP066475
International publication number WO 2011/034206
Date of international filing Sep 15, 2010
Date of international publication Mar 24, 2011
Priority data
  • P2009-214717 (Sep 16, 2009) JP
Title LIQUID ORGANIC SEMICONDUCTOR MATERIAL
Abstract An organic material, which has at least one aromatic conjugated .pi.-electron system in the structure, is selected and purified to increase the purity. Next, the conduction mechanism thereof is confirmed by the time-of-flight method. Thus, the organic material in a liquid phase can be used as an organic semiconductor. Disclosed is a method whereby an organic material, which has at least one aromatic conjugated .pi.-electron system in the structure, in a liquid phase can be used as an organic semiconductor, said method comprising confirming the electron conductivity of the organic material by evaluating the charge transporting properties thereof by the time-of-flight method and evaluating the dilution effect in the case of adding a diluent thereto.
Scope of claims (In Japanese)
【請求項1】 少なくとも一つの芳香族共役π?電子系を有する有機物質を含む有機半導体材料であって;且つ、
 作動温度領域において、等方相を示し、電子および/又はホール伝導を示し、且つ、流動性を有することを特徴とする有機半導体材料。

【請求項2】 前記等方相が、偏光顕微鏡によるクロスニコル下での薄層試料の観察によって確認される請求項1に記載の有機半導体材料。

【請求項3】 10?7cm2/Vs以上の電子および/又はホールの移動度を有する請求項1または2に記載の有機半導体材料。

【請求項4】 作動温度領域において、実質的に保形性(shape?retaining property)を有しない請求項1~3のいずれかに記載の有機半導体材料。

【請求項5】 前記有機半導体材料が、混合物の形態を有する請求項1~4のいずれかに記載の有機半導体材料。

【請求項6】 前記有機半導体材料が、溶液の形態を有する請求項5に記載の有機半導体材料。
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • HANNA, Jun-ichi
  • TOKUNAGA, Keiji
  • IINO, Hiroaki
IPC(International Patent Classification)
Reference ( R and D project ) CREST Establishment of Innovative Manufacturing Technology Based on Nanoscience AREA
Please contact us by E-mail or facsimile if you have any interests on this patent.

PAGE TOP

close
close
close
close
close
close