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Millimeter wave and far-infrared detector UPDATE

外国特許コード F110003245
整理番号 A041-07EP
掲載日 2011年6月22日
出願国 欧州特許庁(EPO)
出願番号 00944328
公報番号 1134814
公報番号 1134814
出願日 平成12年7月7日(2000.7.7)
公報発行日 平成13年9月19日(2001.9.19)
公報発行日 平成30年5月2日(2018.5.2)
国際出願番号 JP2000004540
国際公開番号 WO2001006572
国際出願日 平成12年7月7日(2000.7.7)
国際公開日 平成13年1月25日(2001.1.25)
優先権データ
  • 特願1999-202261 (1999.7.15) JP
  • 特願1999-228037 (1999.8.11) JP
  • 特願1999-334196 (1999.11.25) JP
  • 2000WO-JP04540 (2000.7.7) WO
発明の名称 (英語) Millimeter wave and far-infrared detector UPDATE
発明の概要(英語) (EP1134814)
An MR/FIR light detector is disclosed herein that has extraordinarily high degree of sensitivity and a high speed of response.
The detector includes an MR/FIR light introducing section (1) for guiding an incident MR/FIR light (2), a semiconductor substrate (14) formed with a single-electron transistor (14) for controlling electric current passing through a semiconductor quantum dot (12) formed therein, and a BOTAI antenna (6, 6a, 6b, 6c) for concentrating the MW/FIR light (2) into a small special zone of sub-micron size occupied by the semiconductor quantum dot (12) in the single-electron transistor (14).
The quantum dot (12) forming a two-dimensional electron system absorbs the electromagnetic wave concentrated efficiently, and retains an excitation state created therein for 10 nanoseconds or more, thus permitting electrons of as many as one millions in number or more to be transferred with respect to a single photon absorbed. <IMAGE>
特許請求の範囲(英語) [claim1]
1. An MW(millimeter wave)/FIR(far infra red) light detector comprising: an electromagnetic-wave coupling means for concentrating an electromagnetic wave in a small special region of a sub-micron size, a quantum dot for absorbing the concentrated electromagnetic wave to bring about an excited state between electron levels, and a single-electron transistor including said quantum dot.
[claim2]
2. An MW/FIR light detector as set forth in claim 1, characterized in that the detector retains a state in which an electrical conductance of said single-electron semiconductor is varied according to said excited state of the quantum dot.
[claim3]
3. An MW/FIR light detector as set forth in claim 1 or claim 2, characterized in that said quantum dot has a life in a range of 10 nanoseconds to 1000 seconds in which it remains in said excited state before returning to a ground state thereof.
[claim4]
4. An MW/FIR light detector as set forth in any one of claim 1 to claim 2, characterized in that said electron levels have a difference in energy that is controllable variably according to any one or a combination of a change in size of said quantum dot, an external magnetic field and a biasing voltage.
[claim5]
5. An MW/FIR light detector as set forth in any one of claim 1 to claim 4, characterized in that said excited state is established by any one or a combination of a resonance excitation of electrons according to a size effect of said quantum dot, a resonance excitation of electrons between Landau levels by application of a magnetic field and an excitation between spin states by separation or isolation of a magnetic energy.
[claim6]
6. An MW/FIR light detector as set forth in claim 1, characterized in that said electromagnetic-wave coupling means comprises a standard or regular BOTAI antenna for electrically coupling said quantum dot and said electromagnetic wave together.
[claim7]
7. An MW/FIR light detector as set forth in claim 1, characterized in that said electromagnetic-wave coupling means comprises an anomalous or irregular BOTAI antenna having an node thereof short-circuited for magnetically coupling said quantum dot and said electromagnetic-wave together.
[claim8]
8. An MW/FIR light detector as set forth in any one of claim 1 to claim 3, characterized in that the presence or absence of short-circuit through a node of said electromagnetic-wave coupling means and the size of said quantum dot are determined according to the wavelength of said electromagnetic wave.
[claim9]
9. An MW/FIR light detector as set forth in any one of claim 1, claim 6 or claim 7, characterized in that said electromagnetic-wave coupling means provides a gate electrode for said single-electron transistor.
[claim10]
10. An MW(millimeter wave)/FIR (Infra red) light detector comprising: an electromagnetic-wave coupling means for concentrating an electromagnetic wave in a small special region of a sub-micron size;
a first quantum dot for absorbing the electromagnetic wave concentrated by said electromagnetic-wave coupling means to bring about an ionization thereof;
and a single-electron transistor including a second quantum dot electrostatically coupled to said first quantum dot, whereby said electromagnetic wave is detected on the basis of the fact that electric conductivity of said single-electron transistor varies with a change in electrostatic state of said second quantum dot consequent upon an ionization of said first quantum dot.
[claim11]
11. An MW/IR light detector as set forth in claim 10, characterized in that the ionization of said first quantum dot is brought about by excitation of an electron in a quantized bound state of said first quantum dot to a free electron state of an electron system outside of said first quantum dot.
[claim12]
12. An MW/IR light detector as set forth in claim 10 or claim 11, characterized in that the ionization energy of said first quantum dot is controllable variably by changing the magnitude of a bias voltage applied to a gate of said first quantum dot.
[claim13]
13. An MW/IR light detector as set forth in any one of claim 10 to claim 12, characterized in that said first quantum dot has a life in a range between 1 microsecond and 1000 seconds in which it remains in the ionization state before retuning to a neutral state.
[claim14]
14. An MW/IR light detector as set forth in any one of claim 10 to claim 13, characterized in that said first and second quantum dots lies in an identical semiconductor structure and are isolated from each other electrostatically by bias voltages applied to respective gate thereof, respectively.
[claim15]
15. An MW/IR light detector as set forth in any one of claim 10 to claim 14, characterized in that said first and second quantum dots are formed adjacent to each other across a gap in a semiconductor.
[claim16]
16. An MW/IR light detector as set forth in any one of claim 10 to claim 15, characterized in that said second quantum dot comprises a metal dot formed on said first quantum dot and forms said single-electron transistor by having a tunnel junction with a metal lead wire formed on said metal dot.
[claim17]
17. An MW/IR light detector as set forth in any one of claim 10 to claim 16, characterized in that said second quantum dot is an aluminum metal dot and has a portion of a said tunnel junction formed from aluminum oxide.
[claim18]
18. An MW/IR light detector as set forth in claim 10, characterized in that said electromagnetic-wave coupling means comprises a standard dipole antenna for electrically coupling said first quantum dot and said electromagnetic-wave together.
[claim19]
19. , An MW/IR light detector as set forth in claim 10 or claim 18, characterized in that said electromagnetic-wave coupling means serves as a bias voltage applying gate that forms said first and second quantum dots.
[claim20]
20. An MW/IR light detector as set forth in any one of claim 1, claim 6, claim 7, claim 10, claim 18 and claim 19, characterized in that said electromagnetic-wave coupling means has a lead portion oriented longitudinally in a direction that is perpendicular to a direction of the axis of polarization of said electromagnetic-wave coupling means.
[claim21]
21. An MW/IR light detector as set forth in any one of claim 1, claim 6 to claim 10, and claim 18 to claim 20, characterized in that the node of said electromagnetic-wave coupling means is substantially equal in size to a maximum size of a said quantum dot.
[claim22]
22. An MW/IR light detector as set forth in any one of claim 1, claim 6 to claim 10, and claim 18 to claim 21, characterized in that said electromagnetic-wave coupling means has an electrode diameter that is about one half less in length than the wavelength of said electromagnetic wave.
[claim23]
23. An MW/IR light detector as set forth in any one of claim 1 to claim 5, claim 10, and claim 14 to claim 17, characterized in that said single-electron transistor has a single hetero structure forming a two-dimensional electron system and a said quantum dot is formed by electrically confining a two-dimensional electron gas by a gate electrode of said single-electron transistor.
[claim24]
24. An MW/IR light detector as set forth in any one of claim 1 to claim 5, claim 10, claim 14 and claim 15, characterized in that said single-electron transistor comprises a single hetero structure forming a two-dimensional electron system, a gate electrode for controlling electrostatic potential of a said quantum dot tunnel coupled to said two-dimensional electron system, and a source and a drain electrode that form a source and a drain region, respectively, which are tunnel coupled to said quantum dot.
[claim25]
25. An MW/IR light detector as set forth in any one of claim 1 to claim 5, claim 10, claim 14 and claim 15, characterized in that said single-electron transistor includes a gate electrode for controlling source-drain electric current and a gate electrode for forming a said quantum dot.
[claim26]
26. An MW/IR light detector as set forth in any one of claim 1, claim 6 to claim 10, and claim 14 to claim 20, characterized in that the source electrode and the drain electrode of said single-electron transistor are spaced apart from each other by a distance that is not less than the length of said electromagnetic-wave coupling means in a direction of its axis of polarization.
[claim27]
27. An MW/IR light detector as set forth in any one of claim 1, claim 10, and claim 14 to claim 26, characterized in that said single-electron transistor comprises a compound semiconductor.
[claim28]
28. An MW/IR light detector as set forth in any one of claim 1, claim 10, and claim 14 to claim 27, characterized in that said single-electron transistor is a III-V group compound semiconductor.
[claim29]
29. An MW/IR light detector as set forth in any one of claim 1, claim 10, and claim 14 to claim 28, characterized in that said single-electron transistor has a III-V group compound semiconductor superlattice selection doped, single hetero structure.
[claim30]
30. An MW/IR light detector as set forth in any one of claim 1, claim 10, and claim 14 to claim 29 characterized in that said single-electron transistor has a aluminum-gallium/gallium-arsenide selection doped, single hetero structure.
[claim31]
31. An MW/IR light detector as set forth in any one of claim 10 to claim 15, and claim 18 to claim 26 characterized in that said single-electron transistor is a IV group semiconductor.
[claim32]
32. An MW/IR light detector as set forth in any one of claim 1, claim 10, and claim 14 to claim 31 characterized in that said single-electron transistor is formed symmetrically about a said quantum dot.
[claim33]
33. An MW/IR light detector as set forth in any one of claim 1 to claim 32 characterized in that the detector further includes a light in troducing means for guiding said electromagnetic wave into said electromagnetic-wave coupling means.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • KOMIYAMA SUSUMU
  • OLEG ASTAFIEV
  • VLADMIR ANTONOV
  • HIRAI HIROSHI
  • KUTSUWA TAKESHI
国際特許分類(IPC)
欧州特許分類/主・副
  • B82Y010/00
  • H01L031/0232
  • H01L031/0352
  • H01L031/101
  • H01Q009/28
  • T01L031/0304E
指定国 (EP1134814)
Contracting States: DE FR GB NL
参考情報 (研究プロジェクト等) CREST Quantum Effects and Related Physical Phenomena AREA
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