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Magnetic thin film, and magnetoresistance effect device and magnetic device using the same

外国特許コード F110003363
整理番号 A241-67WO
掲載日 2011年6月23日
出願国 アメリカ合衆国
出願番号 29852907
公報番号 20090097168
公報番号 8125745
出願日 平成19年4月27日(2007.4.27)
公報発行日 平成21年4月16日(2009.4.16)
公報発行日 平成24年2月28日(2012.2.28)
国際出願番号 JP2007059226
国際公開番号 WO2007126071
国際出願日 平成19年4月27日(2007.4.27)
国際公開日 平成19年11月8日(2007.11.8)
優先権データ
  • 特願2006-123502 (2006.4.27) JP
  • 2007WO-JP59226 (2007.4.27) WO
発明の名称 (英語) Magnetic thin film, and magnetoresistance effect device and magnetic device using the same
発明の概要(英語) (US8125745)
A magnetic thin film being ferromagnetic and exhibiting large spin polarization at room temperature is provided that comprises a substrate (2) and a Co2Fe(Si1-xAlx) thin film (3) formed on the substrate (2) where 0<x<1 and wherein the Co2Fe(Si1-xAlx) thin film (3) has a L21 or a B2 structure.
There may be interposed a buffer layer (4) between the substrate (2) and the Co2Fe(Si1-xAlx) thin film (3).
A tunneling magnetoresistance effect device and giant magnetoresistance effect device using such a magnetic thin film exhibit large TMR and GMR at room temperature, with low electric current and under low magnetic field.
Using such a magnetoresistance effect device, a magnetic device and a magnetic apparatus such as a magnetic sensor, a magnetic head or MRAM are provided.
特許請求の範囲(英語) [claim1]
1. A magnetic thin film characterized in that it comprises a Co2Fe(Si1-xAlx) magnetic thin film formed on a substrate, wherein said Co2Fe(Si1-xAlx) magnetic thin film has a crystal structure of L21 or B2 and wherein 0<x<1.
[claim2]
2. The magnetic thin film as set forth in claim 1, characterized in that said substrate is comprised of any one of thermally oxidized Si, glass, MgO single crystal, GaAs single crystal and Al2O3 single crystal.
[claim3]
3. The magnetic thin film as set forth in claim 1 or claim 2, characterized in that a buffer layer is interposed between said substrate and said Co2Fe(Si1-xAlx) magnetic thin film.
[claim4]
4. A tunneling magnetoresistance effect device characterized in that it comprises a substrate, a ferromagnetic layer constituting a free layer, an insulating layer constituting a tunnel barrier, and a ferromagnetic layer constituting a pinned layer, in which: either of said ferromagnetic layers is comprised of a Co2Fe(Si1-xAlx) magnetic thin film (where 0<x<1) formed on said substrate and having a crystal structure of L21 or B2.
[claim5]
5. A tunneling magnetoresistance effect device characterized in that it comprises a substrate, a ferromagnetic layer constituting a free layer, an insulating layer constituting a tunnel barrier and a ferromagnetic layer constituting a pinned layer, in which: said ferromagnetic layer constituting a free layer is comprised of a Co2Fe(Si1-xAlx) magnetic thin film (where 0<x<1) formed on said substrate and having crystal structure of L21 or B2.
[claim6]
6. The tunneling magnetoresistance effect device as set forth in claim 4 or claim 5, characterized in that said substrate is comprised of any one of thermally oxidized Si, glass, MgO single crystal, GaAs single crystal and Al2O3 single crystal.
[claim7]
7. The tunneling magnetoresistance effect device as set forth in any one of claim 4 to claim 5, characterized in that a buffer layer is interposed between said substrate and said Co2Fe(Si1-xAlx) magnetic thin film (where 0<x<1).
[claim8]
8. A giant magnetoresistance effect device characterized in that it comprises a substrate, a ferromagnetic layer constituting a free layer, a nonmagnetic metal layer, and a ferromagnetic layer constituting a pinned layer, in which: either of said ferromagnetic layers is comprised of a Co2Fe(Si1-xAlx) magnetic thin film (where 0<x<1) formed on said substrate and having crystal structure of L21 or B2, said magnetic thin film having an electric current flown therethrough in a direction perpendicular to a film face thereof.
[claim9]
9. A giant magnetoresistance effect device characterized in that it comprises a substrate, a ferromagnetic layer constituting a free layer, a nonmagnetic metal layer and a ferromagnetic layer constituting a pinned layer, in which: said ferromagnetic layer constituting a free layer is comprised of a Co2Fe(Si1-xAlx) magnetic thin film (where 0<x<1) formed on said substrate and having crystal structure of L21 or B2, said magnetic thin film having an electric current flown therethrough in a direction perpendicular to a film face thereof.
[claim10]
10. The giant magnetoresistance effect device as set forth in claim 8 or claim 9, characterized in that said substrate is comprised of any one of thermally oxidized Si, glass, MgO single crystal, GaAs single crystal and Al2O3 single crystal.
[claim11]
11. The giant magnetoresistance effect device as set forth in any one of claim 8 to claim 9, characterized in that a buffer layer is interposed between said substrate and said Co2Fe(Si1-xAlx) magnetic thin film (where 0<x<1).
[claim12]
12. A magnetic device characterized in that it comprises a substrate and a Co2Fe(Si1-xAlx) magnetic thin film (where 0<x<1) formed on said substrate and having a crystal structure of L21 or B2.
[claim13]
13. The magnetic device as set forth in claim 12, wherein said magnetic device is a tunneling magnetoresistance effect device or a giant magnetoresistance effect device having said Co2Fe(Si1-xAlx) magnetic thin film as a ferromagnetic layer for said tunneling magnetoresistance effect device or said giant magnetoresistance effect device.
[claim14]
14. The magnetic device as set forth in claim 12 or claim 13, characterized in that said substrate is comprised of any one of thermally oxidized Si, glass, MgO single crystal, GaAs single crystal and Al2O3 single crystal.
[claim15]
15. The magnetic device as set forth in any one of claim 12 to claim 13, characterized in that a buffer layer is interposed between said substrate and said Co2Fe(Si1-xAlx) magnetic thin film (where 0<x<1).
[claim16]
16. A magnetic apparatus characterized in that it comprises a substrate and a Co2Fe(Si1-xAlx) magnetic thin film (where 0<x<1) formed on said substrate and having a crystal structure of L21 or B2.
[claim17]
17. The magnetic apparatus as set forth in claim 16, characterized in that said magnetic apparatus comprises a tunneling magnetoresistance effect device or a giant magnetoresistance effect device having said Co2Fe(Si1-xAlx) magnetic thin film as a ferromagnetic layer for said tunneling magnetoresistance effect device or said giant magnetoresistance effect device.
[claim18]
18. The magnetic apparatus as set forth in claim 16 or claim 17, characterized in that said substrate is comprised of any one of thermally oxidized Si, glass, MgO single crystal, GaAs single crystal and Al2O3 single crystal.
[claim19]
19. The magnetic apparatus as set forth in any one of claim 16 to claim 17, characterized in that a buffer layer is interposed between said substrate and said Co2Fe(Si1-xAlx) magnetic thin film (where 0<x<1).
[claim20]
20. The magnetic apparatus as set forth in any one of claim 16 to claim 17, characterized in that said magnetic apparatus is one of apparatuses of the class which consists of a magnetic sensor, magnetic head, a hard disc driver and an MRAM.
[claim21]
21. The magnetic thin film as set forth in claim 3, characterized in that said buffer layer is composed of at least one of Cr, Ta, V, Nb, Ru, Fe, FeCo alloy and full-Heusler alloy.
[claim22]
22. The tunneling magnetoresistance effect device as set forth in claim 7, characterized in that said buffer layer is composed of at least one of Cr, Ta, V, Nb, Ru, Fe, FeCo alloy and full-Heusler alloy.
[claim23]
23. The giant magnetoresistance effect device as set forth in claim 11, characterized in that said buffer layer is composed of at least one of Cr, Ta, V, Nb, Ru, Fe, FeCo alloy and full-Heusler alloy.
[claim24]
24. The magnetic device as set forth in claim 15, characterized in that said buffer layer is composed of at least one of Cr, Ta, V, Nb, Ru, Fe, FeCo alloy and full-Heusler alloy.
[claim25]
25. The magnetic apparatus as set forth in claim 19, characterized in that said buffer layer is composed of at least one of Cr, Ta, V, Nb, Ru, Fe, FeCo alloy and full-Heusler alloy.
[claim26]
26. The tunneling magnetoresistance effect device as set forth in claim 6, characterized in that a buffer layer is interposed between said substrate and said Co2Fe(Si1-xAlx) magnetic thin film (where 0<x<1).
[claim27]
27. The giant magnetoresistance effect device as set forth in claim 10, characterized in that a buffer layer is interposed between said substrate and said Co2Fe(Si1-xAlx) magnetic thin film (where 0<x<1).
[claim28]
28. The magnetic apparatus as set forth in claim 18, characterized in that said magnetic apparatus is one of apparatuses of the class which consists of a magnetic sensor, magnetic head, a hard disc driver and an MRAM.
[claim29]
29. The magnetic device as set forth in claim 14, characterized in that a buffer layer is interposed between said substrate and said Co2Fe(Si1-xAlx) magnetic thin film (where 0<x<1).
[claim30]
30. The magnetic apparatus as set forth in claim 18, characterized in that a buffer layer is interposed between said substrate and said Co2Fe(Si1-xAlx) magnetic thin film (where 0<x<1).
  • 発明者/出願人(英語)
  • INOMATA KOUICHIRO
  • TEZUKA NOBUKI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
参考情報 (研究プロジェクト等) CREST Creation of Nanodevices and System Based on New Physical Phenomena and Functional Principles AREA
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