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Field-effect transistor, single-electron transistor and sensor using the same

外国特許コード F110003365
整理番号 A242-23WO
掲載日 2011年6月23日
出願国 アメリカ合衆国
出願番号 57027904
公報番号 20070063304
公報番号 8502277
出願日 平成16年8月27日(2004.8.27)
公報発行日 平成19年3月22日(2007.3.22)
公報発行日 平成25年8月6日(2013.8.6)
国際出願番号 JP2004012402
国際公開番号 WO2005022134
国際出願日 平成16年8月27日(2004.8.27)
国際公開日 平成17年3月10日(2005.3.10)
優先権データ
  • 特願2003-307798 (2003.8.29) JP
  • 2004WO-JP12402 (2004.8.27) WO
発明の名称 (英語) Field-effect transistor, single-electron transistor and sensor using the same
発明の概要(英語) (US8502277)
A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided.
It comprises a field-effect transistor 1A having a substrate 2, a source electrode 4 and a drain electrode 5 provided on said substrate 2, and a channel 6 forming a current path between said source electrode 4 and said drain electrode 5; wherein said field-effect transistor 1A comprises: an interaction-sensing gate 9 for immobilizing thereon a specific substance 10 that is capable of selectively interacting with the detection targets; and a gate 7 applied a voltage thereto so as to detect the interaction by the change of the characteristic of said field-effect transistor 1A.
特許請求の範囲(英語) [claim1]
1. A sensor for detecting a detection target, the sensor comprising: a field effect transistor having a substrate,
a source electrode overlying the substrate and a drain electrode overlying the substrate, and
a channel forming a current path between the source electrode and the drain electrode;
an insulator overlying the substrate and covering a portion of the channel;
an interaction-sensing gate overlying the insulator, the interaction-sensing gate having a specific substance that is capable of selectively interacting with the detection target;
a gate for applying a gate voltage to adjust a characteristic of the field-effect transistor;
wherein the detection target changes the characteristic of the field-effect transistor when interacting with the specific substance;
wherein the interaction-sensing gate is not in direct contact with the source electrode and is not in direct contact with the drain electrode.
[claim2]
2. The sensor of claim 1, wherein the interaction-sensing gate is spaced from the substrate by the insulator.
[claim3]
3. The sensor of claim 1, wherein the channel comprises a carbon nano tube, the carbon nano tube being bent between the source electrode and the drain electrode at room temperature.
[claim4]
4. The sensor of claim 1, further comprising an insulator layer having a low-permittivity insulating material.
[claim5]
5. The sensor of claim 1, wherein the specific substance is disposed on a same side of the sensor as the source electrode and drain electrode.
[claim6]
6. The sensor of claim 1, wherein the characteristic is a threshold of a Coulomb Oscillation, a Coulomb Oscillation period, a threshold of a Coulomb Diamond, or a Coulomb Diamond period.
[claim7]
7. A field-effect transistor used for a sensor to detect a detection target, the field effect transistor comprising: a substrate;
a source electrode overlying the substrate and a drain electrode overlying the substrate;
a channel forming a current path between the source electrode and the drain electrode;
an insulator overlying the substrate and covering a portion of the channel;
an interaction-sensing gate overlying the insulator, the interaction-sensing gate having a specific substance that is capable of selectively interacting with the detection target;
a gate for applying a gate voltage to adjust a characteristic of the field-effect transistor;
wherein the detection target changes the characteristic of the field-effect transistor when interacting with the specific substance;
wherein the interaction-sensing gate is not in direct contact with the source electrode and is not in direct contact with the drain electrode.
[claim8]
8. The field effect transistor of claim 7, wherein the interaction-sensing gate is spaced from the substrate by the insulator.
[claim9]
9. The field effect transistor of claim 7, wherein the channel comprises a carbon nano tube, the carbon nano tube being bent between the source electrode and the drain electrode at room temperature.
[claim10]
10. The field effect transistor of claim 7, further comprising an insulator layer having a low-permittivity insulating material.
[claim11]
11. The field effect transistor of claim 7, wherein the specific substance is disposed on a same side of the sensor as the source electrode and drain electrode.
[claim12]
12. The field effect transistor of claim 7, wherein the characteristic is a threshold of a Coulomb Oscillation, a Coulomb Oscillation period, a threshold of a Coulomb Diamond, or a Coulomb Diamond period.
[claim13]
13. A sensor for detecting a detection target, the sensor comprising: a single-electron transistor having a substrate,
a source electrode overlying the substrate and a drain electrode overlying the substrate, and
a channel forming a current path between the source electrode and the drain electrode;
an insulator overlying the substrate and covering a portion of the channel;
an interaction-sensing gate overlying the insulator, the interaction-sensing gate having a specific substance that is capable of selectively interacting with the detection target;
a gate for applying a gate voltage to adjust a characteristic of the field-effect transistor;
wherein the detection target changes the characteristic of the field-effect transistor when interacting with the specific substance;
wherein the interaction-sensing gate is not in direct contact with the source electrode and is not in direct contact with the drain electrode.
[claim14]
14. The sensor of claim 13, wherein the interaction-sensing gate is spaced from the substrate by the insulator.
[claim15]
15. The sensor of claim 13, wherein the channel comprises a carbon nano tube, the carbon nano tube being bent between the source electrode and the drain electrode at room temperature.
[claim16]
16. The sensor of claim 13, further comprising an insulator layer having a low-permittivity insulating material.
[claim17]
17. The sensor of claim 13, wherein the specific substance is disposed on a same side of the sensor as the source electrode and drain electrode.
[claim18]
18. The sensor of claim 13, wherein the characteristic is a threshold of a Coulomb Oscillation, a Coulomb Oscillation period, a threshold of a Coulomb Diamond, or a Coulomb Diamond period.
[claim19]
19. A single-electron transistor for a sensor to detect a detection target, the single-electron transistor comprising: a substrate;
a source electrode overlying the substrate and a drain electrode overlying the substrate;
a channel forming a current path between the source electrode and the drain electrode;
an insulator overlying the substrate and covering a portion of the channel;
an interaction-sensing gate overlying the insulator, the interaction-sensing gate having a specific substance that is capable of selectively interacting with the detection target;
a gate for applying a gate voltage to adjust a characteristic of the field-effect transistor;
wherein the detection target changes the characteristic of the field-effect transistor when interacting with the specific substance;
wherein the interaction-sensing gate is not in direct contact with the source electrode and is not in direct contact with the drain electrode.
[claim20]
20. The single-electron transistor of claim 7, wherein the interaction-sensing gate is spaced from the substrate by the insulator.
[claim21]
21. The single-electron transistor of 19, wherein the channel comprises a carbon nano tube, the carbon nano tube being bent between the source electrode and the drain electrode at room temperature.
[claim22]
22. The single-electron transistor of claim 19, further comprising an insulator layer having a low-permittivity insulating material.
[claim23]
23. The single-electron transistor of claim 19, wherein the specific substance is disposed on a same side of the sensor as the source electrode and drain electrode.
[claim24]
24. The single-electron transistor of claim 19, wherein the characteristic is a threshold of a Coulomb Oscillation, a Coulomb Oscillation period, a threshold of a Coulomb Diamond, or a Coulomb Diamond period.
  • 発明者/出願人(英語)
  • MATSUMOTO KAZUHIKO
  • KOJIMA ATSUHIKO
  • NAGAO SATORU
  • KATOU MASANORI
  • YAMADA YUTAKA
  • NAGAIKE KAZUHIRO
  • IFUKU YASUO
  • MITANI HIROSHI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
参考情報 (研究プロジェクト等) CREST Creation of Nanodevices and System Based on New Physical Phenomena and Functional Principles AREA
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