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Field-effect transistor, single-electron transistor and sensor using the same

Foreign code F110003365
File No. A242-23WO
Posted date Jun 23, 2011
Country United States of America
Application number 57027904
Gazette No. 20070063304
Gazette No. 8502277
Date of filing Aug 27, 2004
Gazette Date Mar 22, 2007
Gazette Date Aug 6, 2013
International application number JP2004012402
International publication number WO2005022134
Date of international filing Aug 27, 2004
Date of international publication Mar 10, 2005
Priority data
  • P2003-307798 (Aug 29, 2003) JP
  • 2004WO-JP12402 (Aug 27, 2004) WO
Title Field-effect transistor, single-electron transistor and sensor using the same
Abstract (US8502277)
A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided.
It comprises a field-effect transistor 1A having a substrate 2, a source electrode 4 and a drain electrode 5 provided on said substrate 2, and a channel 6 forming a current path between said source electrode 4 and said drain electrode 5; wherein said field-effect transistor 1A comprises: an interaction-sensing gate 9 for immobilizing thereon a specific substance 10 that is capable of selectively interacting with the detection targets; and a gate 7 applied a voltage thereto so as to detect the interaction by the change of the characteristic of said field-effect transistor 1A.
Scope of claims [claim1]
1. A sensor for detecting a detection target, the sensor comprising: a field effect transistor having a substrate,
a source electrode overlying the substrate and a drain electrode overlying the substrate, and
a channel forming a current path between the source electrode and the drain electrode;
an insulator overlying the substrate and covering a portion of the channel;
an interaction-sensing gate overlying the insulator, the interaction-sensing gate having a specific substance that is capable of selectively interacting with the detection target;
a gate for applying a gate voltage to adjust a characteristic of the field-effect transistor;
wherein the detection target changes the characteristic of the field-effect transistor when interacting with the specific substance;
wherein the interaction-sensing gate is not in direct contact with the source electrode and is not in direct contact with the drain electrode.
[claim2]
2. The sensor of claim 1, wherein the interaction-sensing gate is spaced from the substrate by the insulator.
[claim3]
3. The sensor of claim 1, wherein the channel comprises a carbon nano tube, the carbon nano tube being bent between the source electrode and the drain electrode at room temperature.
[claim4]
4. The sensor of claim 1, further comprising an insulator layer having a low-permittivity insulating material.
[claim5]
5. The sensor of claim 1, wherein the specific substance is disposed on a same side of the sensor as the source electrode and drain electrode.
[claim6]
6. The sensor of claim 1, wherein the characteristic is a threshold of a Coulomb Oscillation, a Coulomb Oscillation period, a threshold of a Coulomb Diamond, or a Coulomb Diamond period.
[claim7]
7. A field-effect transistor used for a sensor to detect a detection target, the field effect transistor comprising: a substrate;
a source electrode overlying the substrate and a drain electrode overlying the substrate;
a channel forming a current path between the source electrode and the drain electrode;
an insulator overlying the substrate and covering a portion of the channel;
an interaction-sensing gate overlying the insulator, the interaction-sensing gate having a specific substance that is capable of selectively interacting with the detection target;
a gate for applying a gate voltage to adjust a characteristic of the field-effect transistor;
wherein the detection target changes the characteristic of the field-effect transistor when interacting with the specific substance;
wherein the interaction-sensing gate is not in direct contact with the source electrode and is not in direct contact with the drain electrode.
[claim8]
8. The field effect transistor of claim 7, wherein the interaction-sensing gate is spaced from the substrate by the insulator.
[claim9]
9. The field effect transistor of claim 7, wherein the channel comprises a carbon nano tube, the carbon nano tube being bent between the source electrode and the drain electrode at room temperature.
[claim10]
10. The field effect transistor of claim 7, further comprising an insulator layer having a low-permittivity insulating material.
[claim11]
11. The field effect transistor of claim 7, wherein the specific substance is disposed on a same side of the sensor as the source electrode and drain electrode.
[claim12]
12. The field effect transistor of claim 7, wherein the characteristic is a threshold of a Coulomb Oscillation, a Coulomb Oscillation period, a threshold of a Coulomb Diamond, or a Coulomb Diamond period.
[claim13]
13. A sensor for detecting a detection target, the sensor comprising: a single-electron transistor having a substrate,
a source electrode overlying the substrate and a drain electrode overlying the substrate, and
a channel forming a current path between the source electrode and the drain electrode;
an insulator overlying the substrate and covering a portion of the channel;
an interaction-sensing gate overlying the insulator, the interaction-sensing gate having a specific substance that is capable of selectively interacting with the detection target;
a gate for applying a gate voltage to adjust a characteristic of the field-effect transistor;
wherein the detection target changes the characteristic of the field-effect transistor when interacting with the specific substance;
wherein the interaction-sensing gate is not in direct contact with the source electrode and is not in direct contact with the drain electrode.
[claim14]
14. The sensor of claim 13, wherein the interaction-sensing gate is spaced from the substrate by the insulator.
[claim15]
15. The sensor of claim 13, wherein the channel comprises a carbon nano tube, the carbon nano tube being bent between the source electrode and the drain electrode at room temperature.
[claim16]
16. The sensor of claim 13, further comprising an insulator layer having a low-permittivity insulating material.
[claim17]
17. The sensor of claim 13, wherein the specific substance is disposed on a same side of the sensor as the source electrode and drain electrode.
[claim18]
18. The sensor of claim 13, wherein the characteristic is a threshold of a Coulomb Oscillation, a Coulomb Oscillation period, a threshold of a Coulomb Diamond, or a Coulomb Diamond period.
[claim19]
19. A single-electron transistor for a sensor to detect a detection target, the single-electron transistor comprising: a substrate;
a source electrode overlying the substrate and a drain electrode overlying the substrate;
a channel forming a current path between the source electrode and the drain electrode;
an insulator overlying the substrate and covering a portion of the channel;
an interaction-sensing gate overlying the insulator, the interaction-sensing gate having a specific substance that is capable of selectively interacting with the detection target;
a gate for applying a gate voltage to adjust a characteristic of the field-effect transistor;
wherein the detection target changes the characteristic of the field-effect transistor when interacting with the specific substance;
wherein the interaction-sensing gate is not in direct contact with the source electrode and is not in direct contact with the drain electrode.
[claim20]
20. The single-electron transistor of claim 7, wherein the interaction-sensing gate is spaced from the substrate by the insulator.
[claim21]
21. The single-electron transistor of 19, wherein the channel comprises a carbon nano tube, the carbon nano tube being bent between the source electrode and the drain electrode at room temperature.
[claim22]
22. The single-electron transistor of claim 19, further comprising an insulator layer having a low-permittivity insulating material.
[claim23]
23. The single-electron transistor of claim 19, wherein the specific substance is disposed on a same side of the sensor as the source electrode and drain electrode.
[claim24]
24. The single-electron transistor of claim 19, wherein the characteristic is a threshold of a Coulomb Oscillation, a Coulomb Oscillation period, a threshold of a Coulomb Diamond, or a Coulomb Diamond period.
  • Inventor, and Inventor/Applicant
  • MATSUMOTO KAZUHIKO
  • KOJIMA ATSUHIKO
  • NAGAO SATORU
  • KATOU MASANORI
  • YAMADA YUTAKA
  • NAGAIKE KAZUHIRO
  • IFUKU YASUO
  • MITANI HIROSHI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
Reference ( R and D project ) CREST Creation of Nanodevices and System Based on New Physical Phenomena and Functional Principles AREA
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