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N-type transistor, production methods for n-type transistor and n-type transistor-use channel, and production method of nanotube structure exhibiting n-type semiconductor-like characteristics

外国特許コード F110003367
整理番号 A242-50WO
掲載日 2011年6月23日
出願国 アメリカ合衆国
出願番号 81587106
公報番号 20090008629
公報番号 7902089
出願日 平成18年2月10日(2006.2.10)
公報発行日 平成21年1月8日(2009.1.8)
公報発行日 平成23年3月8日(2011.3.8)
国際出願番号 JP2006302349
国際公開番号 WO2006085611
国際出願日 平成18年2月10日(2006.2.10)
国際公開日 平成18年8月17日(2006.8.17)
優先権データ
  • 特願2005-034476 (2005.2.10) JP
  • 2006WO-JP302349 (2006.2.10) WO
発明の名称 (英語) N-type transistor, production methods for n-type transistor and n-type transistor-use channel, and production method of nanotube structure exhibiting n-type semiconductor-like characteristics
発明の概要(英語) (US7902089)
An object of the present invention is to provide a new n-type transistor, different from the prior art, using a channel having a nanotube-shaped structure, and having n-type semiconductive properties.
To realize this, a film of a nitrogenous compound 6 is formed directly on a channel 5 of a transistor 1 comprising a source electrode 2, a drain electrode 3, a gate electrode 4 and the n-type channel 5 having a nanotube-shaped structure and provided between the source electrode 2 and the drain electrode 3.
特許請求の範囲(英語) [claim1]
1. A method for manufacturing a channel for an n-type transistor, wherein the method comprises: forming a film of a nitrogenous compound directly on a nanotube-shaped structure exhibiting p-type semiconductive properties using a thermal CVD technique, at a temperature of said nanotube-shaped structure of 500 deg. C. or higher and 1600 deg. C. or lower; and
changing a nanotube-shaped structure exhibiting p-type semiconductive properties to said nanotube-shaped structure exhibiting n-type semiconductive properties.
[claim2]
2. The method for manufacturing a channel for an n-type transistor according to claim 1, wherein said forming said film of the nitrogenous compound is performed under normal pressure.
[claim3]
3. The method for manufacturing a channel for an n-type transistor according to claim 1, wherein said forming said film of the nitrogenous compound is performed in an atmosphere of oxygen concentration of 1 volume % or less.
[claim4]
4. The method for manufacturing a channel for an n-type transistor according to claim 1, wherein said forming said film of the nitrogenous compound is performed in a reducing atmosphere.
[claim5]
5. A method for manufacturing a nanotube-shaped structure exhibiting n-type semiconductive properties, wherein the method comprises: forming a film of a nitrogenous compound directly on a nanotube-shaped structure exhibiting p-type semiconductive properties using a thermal CVD technique, at a temperature of said nanotube-shaped structure of 500 deg. C. or higher and 1600 deg. C. or lower; and
changing a nanotube-shaped structure exhibiting p-type semiconductive properties to said nanotube-shaped structure exhibiting n-type semiconductive properties.
[claim6]
6. The method for manufacturing a nanotube-shaped structure exhibiting the n-type semiconductive properties according to claim 5, wherein said forming the film of the nitrogenous compound is performed under normal pressure.
[claim7]
7. The method for manufacturing the nanotube-shaped structure exhibiting the n-type semiconductive properties according to claim 5, wherein said forming said film of the nitrogenous compound is performed in an atmosphere of oxygen concentration of 1 volume % or less.
[claim8]
8. The method for manufacturing the nanotube-shaped structure exhibiting the n-type semiconductive properties according to claim 5, wherein said forming said film of the nitrogenous compound is performed in a reducing atmosphere.
  • 発明者/出願人(英語)
  • MATSUMOTO KAZUHIKO
  • KOJIMA ATSUHIKO
  • NAGAO SATORU
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
参考情報 (研究プロジェクト等) CREST Creation of Nanodevices and System Based on New Physical Phenomena and Functional Principles AREA
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