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FIELD-EFFECT TRANSISTOR

Foreign code F110003425
File No. A111-06EP
Posted date Jun 27, 2011
Country EPO
Application number 01915765
Gazette No. 1186885
Gazette No. 1186885
Date of filing Mar 26, 2001
Gazette Date Mar 13, 2002
Gazette Date Oct 25, 2006
International application number PCT/JP2001/002394
International publication number WO2001/073421
Date of international filing Mar 26, 2001
Date of international publication Oct 4, 2001
Priority data
  • P2000-085947 (Mar 27, 2000) JP
Title FIELD-EFFECT TRANSISTOR
  • Applicant
  • Japan Science and Technology Agency
  • Inventor
  • Kawarada, Hiroshi
IPC(International Patent Classification)
Reference ( R and D project ) CREST Function Evolution of Materials and Devices based on Electron/Photon Related Phenomena AREA
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