TOP > 外国特許検索 > Ferromagnetic shape memory alloy and its use

Ferromagnetic shape memory alloy and its use

外国特許コード F110003473
整理番号 A282-05WO
掲載日 2011年6月27日
出願国 アメリカ合衆国
出願番号 99381206
公報番号 20100156579
公報番号 8016952
出願日 平成18年6月27日(2006.6.27)
公報発行日 平成22年6月24日(2010.6.24)
公報発行日 平成23年9月13日(2011.9.13)
国際出願番号 JP2006312835
国際公開番号 WO2007001009
国際出願日 平成18年6月27日(2006.6.27)
国際公開日 平成19年1月4日(2007.1.4)
優先権データ
  • 特願2005-186663 (2005.6.27) JP
  • 2006WO-JP312835 (2006.6.27) WO
発明の名称 (英語) Ferromagnetic shape memory alloy and its use
発明の概要(英語) (US8016952)
A ferromagnetic shape memory alloy comprising 25-50 atomic % of Mn, 5-18 atomic % in total of at least one metal selected from the group consisting of In, Sn and Sb, and 0.1-15 atomic % of Co and/or Fe, the balance being Ni and inevitable impurities, which has excellent shape memory characteristics in a practical temperature range, thereby recovering its shape by a magnetic change caused by a magnetic-field-induced reverse transformation in a practical temperature range.
特許請求の範囲(英語) [claim1]
1. A ferromagnetic shape memory alloy consisting of 25-50 atomic % of Mn, 5-18 atomic % in total of at least one metal selected from the group consisting of In, Sn and Sb, and 0.1-15 atomic % of Co and/or Fe, the balance being Ni and inevitable impurities.
[claim2]
2. The ferromagnetic shape memory alloy according to claim 1, wherein it contains more than 40 atomic % of Ni.
[claim3]
3. The ferromagnetic shape memory alloy according to claim 1, wherein its parent phase is ferromagnetic, and its martensite phase is paramagnetic, antiferromagnetic or ferrimagnetic.
[claim4]
4. The ferromagnetic shape memory alloy according to claim 3, wherein said martensite phase has a long-period stacking structure.
[claim5]
5. The ferromagnetic shape memory alloy according to claim 3, wherein the difference is 50 emu/g or more between magnetization measured at a martensitic transformation-starting temperature and magnetization measured at a martensitic transformation-finishing temperature, and between magnetization measured at a martensitic reverse transformation-starting temperature and magnetization measured at a martensitic reverse transformation-finishing temperature, when a magnetic field of 20 kOe or more is applied.
[claim6]
6. The ferromagnetic shape memory alloy according to claim 3, wherein a rho M/rho p ratio of the electric resistance rho M of the martensite phase to the electric resistance rho p of the parent phase is 2 or more.
[claim7]
7. A magnetic-driving device comprising the ferromagnetic shape memory alloy recited in claim 1, which utilizes shape recovery and/or magnetic change caused by martensitic reverse transformation to a ferromagnetic parent phase induced by applying a magnetic field to said ferromagnetic shape memory alloy in a state of a paramagnetic, antiferromagnetic or ferrimagnetic martensite phase.
[claim8]
8. The magnetic-driving device according to claim 7, which utilizes shape change and/or magnetic change caused by a transformation to said martensite phase induced by removing a magnetic field from said ferromagnetic shape memory alloy in a state of said parent phase generated by a magnetic-field-induced reverse transformation.
[claim9]
9. The magnetic-driving device according to claim 8, which utilizes stress generated by said shape recovery and/or said shape change.
[claim10]
10. A thermomagnetic-driving device comprising a temperature-sensitive magnetic body comprising the ferromagnetic shape memory alloy recited in claim 1, which utilizes (a) magnetic change caused by a martensitic reverse transformation to a ferromagnetic parent phase induced by heating said ferromagnetic shape memory alloy in a state of a paramagnetic, antiferromagnetic or ferrimagnetic martensite phase, and/or (b) magnetic change caused by a transformation to said martensite phase induced by cooling the ferromagnetic shape memory alloy in a state of said parent phase.
[claim11]
11. A magnetic freezer composed of the ferromagnetic shape memory alloy recited in claim 1, which utilizes heat absorption occurring in a martensitic reverse transformation to a ferromagnetic parent phase induced by applying a magnetic field to said ferromagnetic shape memory alloy in a state of a paramagnetic, antiferromagnetic or ferrimagnetic martensite phase.
[claim12]
12. A heat-generating/absorbing device comprising the ferromagnetic shape memory alloy recited in claim 1, which utilizes (a) heat generation occurring in said ferromagnetic shape memory alloy in a state of a ferromagnetic parent phase by a martensitic transformation, and (b) heat absorption occurring in said ferromagnetic shape memory alloy in a state of a paramagnetic, antiferromagnetic or ferrimagnetic martensite phase by a martensitic reverse transformation.
[claim13]
13. The heat-generating/absorbing device according to claim 12, wherein (a) said martensitic transformation is induced by applying stress to the ferromagnetic shape memory alloy in a state of said parent phase, or by removing a magnetic field from the ferromagnetic shape memory alloy in a state of said parent phase generated by a magnetic-field-induced reverse transformation; and (b) said martensitic reverse transformation is induced by applying a magnetic field to the ferromagnetic shape memory alloy in a state of said martensite phase, or by removing stress from the ferromagnetic shape memory alloy in a state of a martensite phase generated by a stress-induced transformation.
[claim14]
14. A stress-magnetism device comprising the ferromagnetic shape memory alloy recited in claim 1, which utilizes (a) magnetic change caused by a transformation to a paramagnetic, antiferromagnetic or ferrimagnetic martensite phase induced by applying stress to said ferromagnetic shape memory alloy in a state of a ferromagnetic parent phase, and/or (b) magnetic change caused by a reverse transformation to said parent phase induced by removing stress from the ferromagnetic shape memory alloy in a state of a martensite phase generated by a stress-induced transformation.
[claim15]
15. A stress-resistance device comprising the ferromagnetic shape memory alloy recited in claim 1, which utilizes (a) electric resistance change caused by a transformation to a paramagnetic, antiferromagnetic or ferrimagnetic martensite phase induced by applying stress to said ferromagnetic shape memory alloy in a state of a ferromagnetic parent phase, and/or (b) electric resistance change caused by a reverse transformation to said parent phase induced by removing stress from the ferromagnetic shape memory alloy in a state of a martensite phase generated by a stress-induced transformation.
[claim16]
16. A magnetoresistance device comprising the ferromagnetic shape memory alloy recited in claim 1, which utilizes (a) electric resistance change caused by a martensitic reverse transformation to a ferromagnetic parent phase induced by applying a magnetic field to said ferromagnetic shape memory alloy in a state of a paramagnetic, antiferromagnetic or ferrimagnetic martensite phase, and/or (b) electric resistance change caused by a transformation to said martensite phase induced by removing a magnetic field from the ferromagnetic shape memory alloy in a state of a parent phase generated by a magnetic-field-induced reverse transformation.
[claim17]
17. A ferromagnetic shape memory alloy comprising 25-50 atomic % of Mn, 5-18 atomic % in total of at least one metal selected from the group consisting of In, Sn and Sb, 0.1-15 atomic % of Co and/or Fe, 0.1-15 atomic % in total of at least one metal selected from the group consisting of Ti, Pd, Pt, Al, Ga, Si, Ge, Pb and Bi, and more than 40 atomic % of Ni, the balance being inevitable impurities.
[claim18]
18. A ferromagnetic shape memory alloy comprising 25-50 atomic % of Mn, 5-18 atomic % in total of at least one metal selected from the group consisting of In, Sn and Sb, 0.1-15 atomic % of Co and/or Fe, and 0.1-15 atomic % in total of at least one metal selected from the group consisting of Pd, Pt, Pb and Bi, the balance being Ni and inevitable impurities.
[claim19]
19. The ferromagnetic shape memory alloy according to claim 18, wherein it contains more than 40 atomic % of Ni.
  • 発明者/出願人(英語)
  • ISHIDA KIYOHITO
  • OIKAWA KATSUNARI
  • KAINUMA RYOSUKE
  • KANOMATA TAKESHI
  • SUTOU YUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
参考情報 (研究プロジェクト等) CREST The Innovation of Simulation Technology and the Construction of Foundations for Its Practical Use AREA
ライセンスをご希望の方、特許の内容に興味を持たれた方は、問合せボタンを押してください。

PAGE TOP

close
close
close
close
close
close