TOP > 外国特許検索 > Ferromagnetic shape memory alloy and its use

Ferromagnetic shape memory alloy and its use

外国特許コード F110003473
整理番号 A282-05WO
掲載日 2011年6月27日
出願国 アメリカ合衆国
出願番号 99381206
公報番号 20100156579
公報番号 8016952
出願日 平成18年6月27日(2006.6.27)
公報発行日 平成22年6月24日(2010.6.24)
公報発行日 平成23年9月13日(2011.9.13)
国際出願番号 JP2006312835
国際公開番号 WO2007001009
国際出願日 平成18年6月27日(2006.6.27)
国際公開日 平成19年1月4日(2007.1.4)
優先権データ
  • 特願2005-186663 (2005.6.27) JP
  • 2006WO-JP312835 (2006.6.27) WO
発明の名称 (英語) Ferromagnetic shape memory alloy and its use
発明の概要(英語) (US8016952)
A ferromagnetic shape memory alloy comprising 25-50 atomic % of Mn, 5-18 atomic % in total of at least one metal selected from the group consisting of In, Sn and Sb, and 0.1-15 atomic % of Co and/or Fe, the balance being Ni and inevitable impurities, which has excellent shape memory characteristics in a practical temperature range, thereby recovering its shape by a magnetic change caused by a magnetic-field-induced reverse transformation in a practical temperature range.
特許請求の範囲(英語) [claim1]
1. A ferromagnetic shape memory alloy consisting of 25-50 atomic % of Mn, 5-18 atomic % in total of at least one metal selected from the group consisting of In, Sn and Sb, and 0.1-15 atomic % of Co and/or Fe, the balance being Ni and inevitable impurities.
[claim2]
2. The ferromagnetic shape memory alloy according to claim 1, wherein it contains more than 40 atomic % of Ni.
[claim3]
3. The ferromagnetic shape memory alloy according to claim 1, wherein its parent phase is ferromagnetic, and its martensite phase is paramagnetic, antiferromagnetic or ferrimagnetic.
[claim4]
4. The ferromagnetic shape memory alloy according to claim 3, wherein said martensite phase has a long-period stacking structure.
[claim5]
5. The ferromagnetic shape memory alloy according to claim 3, wherein the difference is 50 emu/g or more between magnetization measured at a martensitic transformation-starting temperature and magnetization measured at a martensitic transformation-finishing temperature, and between magnetization measured at a martensitic reverse transformation-starting temperature and magnetization measured at a martensitic reverse transformation-finishing temperature, when a magnetic field of 20 kOe or more is applied.
[claim6]
6. The ferromagnetic shape memory alloy according to claim 3, wherein a rho M/rho p ratio of the electric resistance rho M of the martensite phase to the electric resistance rho p of the parent phase is 2 or more.
[claim7]
7. A magnetic-driving device comprising the ferromagnetic shape memory alloy recited in claim 1, which utilizes shape recovery and/or magnetic change caused by martensitic reverse transformation to a ferromagnetic parent phase induced by applying a magnetic field to said ferromagnetic shape memory alloy in a state of a paramagnetic, antiferromagnetic or ferrimagnetic martensite phase.
[claim8]
8. The magnetic-driving device according to claim 7, which utilizes shape change and/or magnetic change caused by a transformation to said martensite phase induced by removing a magnetic field from said ferromagnetic shape memory alloy in a state of said parent phase generated by a magnetic-field-induced reverse transformation.
[claim9]
9. The magnetic-driving device according to claim 8, which utilizes stress generated by said shape recovery and/or said shape change.
[claim10]
10. A thermomagnetic-driving device comprising a temperature-sensitive magnetic body comprising the ferromagnetic shape memory alloy recited in claim 1, which utilizes (a) magnetic change caused by a martensitic reverse transformation to a ferromagnetic parent phase induced by heating said ferromagnetic shape memory alloy in a state of a paramagnetic, antiferromagnetic or ferrimagnetic martensite phase, and/or (b) magnetic change caused by a transformation to said martensite phase induced by cooling the ferromagnetic shape memory alloy in a state of said parent phase.
[claim11]
11. A magnetic freezer composed of the ferromagnetic shape memory alloy recited in claim 1, which utilizes heat absorption occurring in a martensitic reverse transformation to a ferromagnetic parent phase induced by applying a magnetic field to said ferromagnetic shape memory alloy in a state of a paramagnetic, antiferromagnetic or ferrimagnetic martensite phase.
[claim12]
12. A heat-generating/absorbing device comprising the ferromagnetic shape memory alloy recited in claim 1, which utilizes (a) heat generation occurring in said ferromagnetic shape memory alloy in a state of a ferromagnetic parent phase by a martensitic transformation, and (b) heat absorption occurring in said ferromagnetic shape memory alloy in a state of a paramagnetic, antiferromagnetic or ferrimagnetic martensite phase by a martensitic reverse transformation.
[claim13]
13. The heat-generating/absorbing device according to claim 12, wherein (a) said martensitic transformation is induced by applying stress to the ferromagnetic shape memory alloy in a state of said parent phase, or by removing a magnetic field from the ferromagnetic shape memory alloy in a state of said parent phase generated by a magnetic-field-induced reverse transformation; and (b) said martensitic reverse transformation is induced by applying a magnetic field to the ferromagnetic shape memory alloy in a state of said martensite phase, or by removing stress from the ferromagnetic shape memory alloy in a state of a martensite phase generated by a stress-induced transformation.
[claim14]
14. A stress-magnetism device comprising the ferromagnetic shape memory alloy recited in claim 1, which utilizes (a) magnetic change caused by a transformation to a paramagnetic, antiferromagnetic or ferrimagnetic martensite phase induced by applying stress to said ferromagnetic shape memory alloy in a state of a ferromagnetic parent phase, and/or (b) magnetic change caused by a reverse transformation to said parent phase induced by removing stress from the ferromagnetic shape memory alloy in a state of a martensite phase generated by a stress-induced transformation.
[claim15]
15. A stress-resistance device comprising the ferromagnetic shape memory alloy recited in claim 1, which utilizes (a) electric resistance change caused by a transformation to a paramagnetic, antiferromagnetic or ferrimagnetic martensite phase induced by applying stress to said ferromagnetic shape memory alloy in a state of a ferromagnetic parent phase, and/or (b) electric resistance change caused by a reverse transformation to said parent phase induced by removing stress from the ferromagnetic shape memory alloy in a state of a martensite phase generated by a stress-induced transformation.
[claim16]
16. A magnetoresistance device comprising the ferromagnetic shape memory alloy recited in claim 1, which utilizes (a) electric resistance change caused by a martensitic reverse transformation to a ferromagnetic parent phase induced by applying a magnetic field to said ferromagnetic shape memory alloy in a state of a paramagnetic, antiferromagnetic or ferrimagnetic martensite phase, and/or (b) electric resistance change caused by a transformation to said martensite phase induced by removing a magnetic field from the ferromagnetic shape memory alloy in a state of a parent phase generated by a magnetic-field-induced reverse transformation.
[claim17]
17. A ferromagnetic shape memory alloy comprising 25-50 atomic % of Mn, 5-18 atomic % in total of at least one metal selected from the group consisting of In, Sn and Sb, 0.1-15 atomic % of Co and/or Fe, 0.1-15 atomic % in total of at least one metal selected from the group consisting of Ti, Pd, Pt, Al, Ga, Si, Ge, Pb and Bi, and more than 40 atomic % of Ni, the balance being inevitable impurities.
[claim18]
18. A ferromagnetic shape memory alloy comprising 25-50 atomic % of Mn, 5-18 atomic % in total of at least one metal selected from the group consisting of In, Sn and Sb, 0.1-15 atomic % of Co and/or Fe, and 0.1-15 atomic % in total of at least one metal selected from the group consisting of Pd, Pt, Pb and Bi, the balance being Ni and inevitable impurities.
[claim19]
19. The ferromagnetic shape memory alloy according to claim 18, wherein it contains more than 40 atomic % of Ni.
  • 発明者/出願人(英語)
  • ISHIDA KIYOHITO
  • OIKAWA KATSUNARI
  • KAINUMA RYOSUKE
  • KANOMATA TAKESHI
  • SUTOU YUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • C22C019/03
  • C22C019/05R
  • C22F001/10
  • H01F001/03B2B
参考情報 (研究プロジェクト等) CREST The Innovation of Simulation Technology and the Construction of Foundations for Its Practical Use AREA
ライセンスをご希望の方、特許の内容に興味を持たれた方は、問合せボタンを押してください。

PAGE TOP

close
close
close
close
close
close