Top > Search of International Patents > Magnetic semiconductor material

Magnetic semiconductor material

Foreign code F110003550
File No. BE06003WO
Posted date Jun 29, 2011
Country United States of America
Application number 90902006
Gazette No. 20090042058
Gazette No. 8420236
Date of filing Mar 17, 2006
Gazette Date Feb 12, 2009
Gazette Date Apr 16, 2013
International application number JP2006305405
International publication number WO2006098432
Date of international filing Mar 17, 2006
Date of international publication Sep 21, 2006
Priority data
  • P2005-080572 (Mar 18, 2005) JP
  • P2005-378897 (Dec 28, 2005) JP
  • 2006WO-JP305405 (Mar 17, 2006) WO
Title Magnetic semiconductor material
Abstract (US8420236)
A magnetic semiconductor material contains at least one type of transition metals (Mn2+, Fe3+, Ru3+, Re2+, and Os3+) having five electrons in the d atomic orbital as a magnetic ion, in which the magnetic semiconductor material exhibits n-type electrical conduction by injection of an electron carrier and p-type electric conduction by injection of a hole carrier.
A specific example is a layered oxy-pnictide compound represented by LnMnOPn (wherein Ln is at least one type selected from Y and rare earth elements of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and Pn is at least one selected from pnicogen elements of N, P, As, Bi, and Sb).
A high-sensitivity magnetic sensor, current sensor, or memory device can be made by using a magnetic pn homojunction structure made of thin films composed of the magnetic semiconductor material.
Scope of claims [claim1]
1. A pn homojunction structure of magnetic material, comprising: an n-type conductive magnetic semiconductor material represented by LnMnO1-x1Pn1-y1,
wherein x1 and y1 satisfy relations: 0<x1<0.1 and 0<y1<0.1, and
a p-type conductive magnetic semiconductor material adjoining the n-type conductive magnetic semiconductor material, the p-type conductive magnetic semiconductor material being represented by LnMnO1+x2Pn1+y2,
wherein x2 and y2 satisfy 0<x2<0.1 and 0<y2<0.1,
wherein LnMnOPn is a layered oxy-pnictide compound,
Ln is at least one type selected from Y and rare earth elements of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dv, Ho, Er, Tm, Yb, and Lu, and
Pn is at least one selected from pnicogen elements of N, P, As, Bi, and Sb.
[claim2]
2. The pn homojunction structure of magnetic material according to claim 1, wherein the magnetic semiconductor material is included in a magnetic pn homojunction device.
[claim3]
3. The pn homojunction structure of magnetic material according to claim 2, wherein the magnetic pn homojunction device is one device selected from a device for detecting an external magnetic field, a device for detecting electrical current, and a memory device having functions of reading, writing, and retaining information.
[claim4]
4. A pn homojunction structure of magnetic material, comprising: a p-type conductive magnetic semiconductor material represented by LnMnOPn Ln3+ ion site is doped with a divalent metal ion selected from Mg2+, Ca2+, Sr2+, and Ba2+, and
an n-type conductive magnetic semiconductor material adjoining the p-type conductive magnetic semiconductor material, the n-type conductive magnetic semiconductor material being represented by LnMnOPn, wherein Ln3+ ion site is doped with a tetravalent metal ion selected from Ti4+, Zr4+, Hf4+, Si4+, Ge4+, Sn4+, and Pb4+,
wherein LnMnOPn is a layered oxy-pnictide compound,
Ln is at least one type selected from Y and rare earth elements of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and
Pn is at least one selected from pnicogen elements of N, P, As, Bi, and Sb.
[claim5]
5. The pn homojunction structure of magnetic material according to claim 4, wherein the magnetic semiconductor material is included in a magnetic pn homojunction device.
  • Inventor, and Inventor/Applicant
  • HOSONO HIDEO
  • HIRANO MASAHIRO
  • HIRAMATSU HIDENORI
  • KAMIYA TOSHIO
  • YANAGI HIROSHI
  • MOTOMITSU EIJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
Reference ( R and D project ) ERATO/SORST Exploring and developing applications for active functions utilizing nanostructure embedded in transparent oxides AREA
Please contact us by E-mail or facsimile if you have any interests on this patent.

PAGE TOP

close
close
close
close
close
close