Fine projection structure and fabricating method thereof
| Foreign code | F110003594 |
|---|---|
| File No. | E03510US |
| Posted date | Jun 30, 2011 |
| Country | United States of America |
| Application number | 09403198 |
| Gazette No. | 06025604 |
| Date of filing | Jun 9, 1998 |
| Gazette Date | Feb 15, 2000 |
| Priority data |
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| Title | Fine projection structure and fabricating method thereof |
| Abstract | Dispose a fine metal particle on a semiconductor substrate. By heat-treating this in a vacuum, a constituent element of the semiconductor substrate is dissolved into the fine metal particle to form a solid solution, resulting in further formation of a homogeneous liquid phase (liquid droplet) composed of semiconductor-metal. By annealing this, the constituent element of the semiconductor substrate is precipitated from the semiconductor-metal liquid droplet. Thus, a fine projection composite structure comprising a semiconductor substrate, a semiconductor fine projection epitaxially grown selectively at an arbitrary position on the semiconductor substrate, and a metal layer disposed selectively on the semiconductor fine projection, can be obtained. The metal layer can be removed as demands arise. Such a fine projection composite structure possesses applicability in, for instance, an ultra-high integration semiconductor device or a quantum size device. |
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| IPC(International Patent Classification) |
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| Reference ( R and D project ) | ERATO TANAKA Solid Junction AREA |
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