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Fine projection structure and fabricating method thereof

Foreign code F110003594
File No. E03510US
Posted date Jun 30, 2011
Country United States of America
Application number 09403198
Gazette No. 06025604
Date of filing Jun 9, 1998
Gazette Date Feb 15, 2000
Priority data
  • P1997-153651 (Jun 11, 1997) JP
Title Fine projection structure and fabricating method thereof
Abstract Dispose a fine metal particle on a semiconductor substrate. By heat-treating this in a vacuum, a constituent element of the semiconductor substrate is dissolved into the fine metal particle to form a solid solution, resulting in further formation of a homogeneous liquid phase (liquid droplet) composed of semiconductor-metal. By annealing this, the constituent element of the semiconductor substrate is precipitated from the semiconductor-metal liquid droplet. Thus, a fine projection composite structure comprising a semiconductor substrate, a semiconductor fine projection epitaxially grown selectively at an arbitrary position on the semiconductor substrate, and a metal layer disposed selectively on the semiconductor fine projection, can be obtained. The metal layer can be removed as demands arise. Such a fine projection composite structure possesses applicability in, for instance, an ultra-high integration semiconductor device or a quantum size device.
  • Inventor, and Inventor/Applicant
  • Wakayama, Yutaka; Yokohama [JP]
  • Tanaka, Shun-ichiro; Yokohama [JP]
  • Japan Science and Technology Corporation, [JP]
  • Kabushiki Kaisha Toshiba, [JP]
IPC(International Patent Classification)
Reference ( R and D project ) ERATO TANAKA Solid Junction AREA
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