Amorphous oxide and thin film transistor
|Posted date||Jul 4, 2011|
|Country||United States of America|
|Date of filing||Jan 5, 2011|
|Gazette Date||May 5, 2011|
|Gazette Date||Feb 23, 2016|
|International application number||JP2005003273|
|International publication number||WO2005088726|
|Date of international filing||Feb 28, 2005|
|Date of international publication||Sep 22, 2005|
|Title||Amorphous oxide and thin film transistor|
The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide.
In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide.
In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.
|Scope of claims||
1. A thin film transistor device comprising: a drain electrode;
a source electrode;
a channel layer contacting the drain electrode and the source electrode, wherein the channel layer is formed of an amorphous InxSn1-xOxide (0.8 <= x <= 0.9) consisting of SnO2 in the presence of In2O3 as a host oxide, further the channel layer is prepared by a sputtering method or a pulsed laser deposition method using a In2O3 -- SnO2 polycrystalline sinter as a target in an atmosphere containing oxygen gas, and
the channel layer having a transparent, semi-insulating property represented by the electron mobility is more than 1 cm2/(V.sec) and the electron carrier concentration is 1018/cm3 or less as measured by Hall-effect measurement at room temperature;
a gate electrode; and
a gate insulating film positioned between the gate electrode and the channel.
|IPC(International Patent Classification)||
|Reference ( R and D project )||ERATO HOSONO Transparent ElectroActive Materials AREA|
Contact Information for " Amorphous oxide and thin film transistor "
- Japan Science and Technology Agency Department of Intellectual Property Management
- URL: http://www.jst.go.jp/chizai/
- Address: 5-3, Yonbancho, Chiyoda-ku, Tokyo, Japan , 102-8666
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