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Growth of planar, non-polar, group-III nitride films 実績あり

外国特許コード F110003754
整理番号 E06701US1
掲載日 2011年7月4日
出願国 アメリカ合衆国
出願番号 20740708
公報番号 20090001519
公報番号 8450192
出願日 平成20年9月9日(2008.9.9)
公報発行日 平成21年1月1日(2009.1.1)
公報発行日 平成25年5月28日(2013.5.28)
国際出願番号 US2003021916
国際公開番号 WO2004061969
国際出願日 平成15年7月15日(2003.7.15)
国際公開日 平成16年7月22日(2004.7.22)
優先権データ
  • 2002US-60433843 (2002.12.16) US
  • 2002US-60433844 (2002.12.16) US
  • 2003WO-US21916 (2003.7.15) WO
  • 2005US-10537385 (2005.6.3) US
発明の名称 (英語) Growth of planar, non-polar, group-III nitride films 実績あり
発明の概要(英語) (US8450192)
Growth methods for planar, non-polar, Group-III nitride films are described.
The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.
特許請求の範囲(英語) [claim1]
1. A method for fabricating Group-III nitride, comprising: growing one or more non-polar Group-III nitride layers on a surface of a substrate using vapor phase epitaxy, including;
(a) transporting a Group III-source to the surface of the substrate using one or more carrier gates, wherein the Group III source reacts with a nitrogen precursor at a surface of the substrate to grow the non-polar Group-III nitride layers,
(b) selecting one or more growth pressures, the one or more carrier gases, one or more growth temperatures, and one or more gas velocities, wherein;
the non-polar Group-III nitride layers have a grown top surface that is planar and a non-polar plane, with a root mean square roughness, as grown, below 0.8 nanometers over a sampling area of at least 2 by 2 micrometers, and
the non-polar Group III-nitride layers comprise a laser diode, light emitting diode, or transistor structure.
[claim2]
2. The method of claim 1, wherein the substrate, or a film between the substrate and the non-polar Group III-nitride layers, contains a dissimilar material to the non-polar Group III-nitride layers.
[claim3]
3. The method of claim 1, wherein the substrate is free-standing gallium nitride (GaN), aluminum nitride (AIN), or aluminum gallium nitride (AlGaN).
[claim4]
4. The method of claim 1, wherein the substrate is coated with a nucleation layer or a film of gallium nitride (GaN), aluminum nitride (AlN), or aluminum gallium nitride (AlGaN) and the non-polar Group-III nitride layers are grown on the film or the nucleation layer.
[claim5]
5. The method of claim 1, wherein; the non-polar Group-III nitride layers' top surface is grown using a fraction of hydrogen (H2) in the carrier gases, and
the non-polar Group-III nitride layers' top surface is grown using a reduced reactor pressure below atmospheric pressure.
[claim6]
6. A Group-III nitride film or substrate fabricated using the method of claim 1.
[claim7]
7. The method of claim 1, wherein the top surface is an a-plane.
[claim8]
8. The method of claim 1, wherein the non-polar Group-III nitride layers have a thickness that is sufficient to form a free-standing substrate.
[claim9]
9. The method of claim 1, wherein the non-polar Group-III nitride layers have a thickness of at least 200 micrometers.
[claim10]
10. The method of claim 1, wherein the non-polar Group-III nitride layers are GaN layers.
[claim11]
11. A device, comprising; one or more non-polar III-nitride layers having a top surface that is a planar and a non-polar plane, as grown, wherein;
the top surface has a root mean square roughness, as grown, below 0.8 nanometers over a sampling area of at least 2 by 2 micrometers, and
the non-polar Group III-nitride layers comprise a laser diode, light emitting diode, or transistor structure.
[claim12]
12. The device of claim 11, wherein the non-polar III-nitride layers have a thickness of at least 200 micrometers.
[claim13]
13. The device of claim 11, wherein the non-polar III-nitride layers, are a-plane layers and the non-polar plane is an a-plane.
[claim14]
14. The device of claim 11, wherein the non-polar III-nitride layers, comprise GaN.
[claim15]
15. The device of claim 11, wherein the non-polar Group III-nitride layers are grown on a substrate and the substrate contains a dissimilar material to the non-polar Group III-nitride layers.
[claim16]
16. The device of claim 11, wherein the non-polar Group-III nitride layers are grown on free-standing gallium nitride (GaN), aluminum nitride (AIN), or aluminum gallium nitride (AIGaN).
[claim17]
17. The device of claim 11, wherein the non-polar Group-III nitride layers form different Group-III-nitride films.
[claim18]
18. The device of claim 11, wherein: the top surface has pits decorating threading dislocation terminations and a pit density of no more than 2 * 109 cm-2 to 9 * 109 cm-2, and
the top surface has a root mean square roughness, as grown, below 2 nanometers over a sampling area of at least 10-20 by 10-20 micrometers.
[claim19]
19. The method of claim 1, wherein the non-polar Group-III nitride layers form different Group-III-nitride films.
[claim20]
20. The method of claim 1, wherein: the top surface has pits decorating threading dislocation terminations and a pit density of no more than 2 * 109 cm-2 to 9 * 109 cm-2, and
the top surface has a root mean square roughness, as grown, below 2 nanometers over a sampling area of at least 10-20 by 10-20 micrometers.
[claim21]
21. The method of claim 1, wherein the growing is by Hydride Vapor Phase Epitaxy (HVPE).
[claim22]
22. The method of claim 1, further comprising growing the non-polar Group III nitride layers at a growth rate greater than 200 micrometers per hour.
  • 発明者/出願人(英語)
  • HASKELL BENJAMIN A
  • FINI PAUL T
  • MATSUDA SHIGEMASA
  • CRAVEN MICHAEL D
  • DENBAARS STEVEN P
  • SPECK JAMES S
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO NAKAMURA Inhomogeneous Crystal AREA
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