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Growth of planar, non-polar, group-III nitride films achieved

Foreign code F110003754
File No. E06701US1
Posted date Jul 4, 2011
Country United States of America
Application number 20740708
Gazette No. 20090001519
Gazette No. 8450192
Date of filing Sep 9, 2008
Gazette Date Jan 1, 2009
Gazette Date May 28, 2013
International application number US2003021916
International publication number WO2004061969
Date of international filing Jul 15, 2003
Date of international publication Jul 22, 2004
Priority data
  • 2002US-60433843 (Dec 16, 2002) US
  • 2002US-60433844 (Dec 16, 2002) US
  • 2003WO-US21916 (Jul 15, 2003) WO
  • 2005US-10537385 (Jun 3, 2005) US
Title Growth of planar, non-polar, group-III nitride films achieved
Abstract (US8450192)
Growth methods for planar, non-polar, Group-III nitride films are described.
The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.
Scope of claims [claim1]
1. A method for fabricating Group-III nitride, comprising: growing one or more non-polar Group-III nitride layers on a surface of a substrate using vapor phase epitaxy, including;
(a) transporting a Group III-source to the surface of the substrate using one or more carrier gates, wherein the Group III source reacts with a nitrogen precursor at a surface of the substrate to grow the non-polar Group-III nitride layers,
(b) selecting one or more growth pressures, the one or more carrier gases, one or more growth temperatures, and one or more gas velocities, wherein;
the non-polar Group-III nitride layers have a grown top surface that is planar and a non-polar plane, with a root mean square roughness, as grown, below 0.8 nanometers over a sampling area of at least 2 by 2 micrometers, and
the non-polar Group III-nitride layers comprise a laser diode, light emitting diode, or transistor structure.
[claim2]
2. The method of claim 1, wherein the substrate, or a film between the substrate and the non-polar Group III-nitride layers, contains a dissimilar material to the non-polar Group III-nitride layers.
[claim3]
3. The method of claim 1, wherein the substrate is free-standing gallium nitride (GaN), aluminum nitride (AIN), or aluminum gallium nitride (AlGaN).
[claim4]
4. The method of claim 1, wherein the substrate is coated with a nucleation layer or a film of gallium nitride (GaN), aluminum nitride (AlN), or aluminum gallium nitride (AlGaN) and the non-polar Group-III nitride layers are grown on the film or the nucleation layer.
[claim5]
5. The method of claim 1, wherein; the non-polar Group-III nitride layers' top surface is grown using a fraction of hydrogen (H2) in the carrier gases, and
the non-polar Group-III nitride layers' top surface is grown using a reduced reactor pressure below atmospheric pressure.
[claim6]
6. A Group-III nitride film or substrate fabricated using the method of claim 1.
[claim7]
7. The method of claim 1, wherein the top surface is an a-plane.
[claim8]
8. The method of claim 1, wherein the non-polar Group-III nitride layers have a thickness that is sufficient to form a free-standing substrate.
[claim9]
9. The method of claim 1, wherein the non-polar Group-III nitride layers have a thickness of at least 200 micrometers.
[claim10]
10. The method of claim 1, wherein the non-polar Group-III nitride layers are GaN layers.
[claim11]
11. A device, comprising; one or more non-polar III-nitride layers having a top surface that is a planar and a non-polar plane, as grown, wherein;
the top surface has a root mean square roughness, as grown, below 0.8 nanometers over a sampling area of at least 2 by 2 micrometers, and
the non-polar Group III-nitride layers comprise a laser diode, light emitting diode, or transistor structure.
[claim12]
12. The device of claim 11, wherein the non-polar III-nitride layers have a thickness of at least 200 micrometers.
[claim13]
13. The device of claim 11, wherein the non-polar III-nitride layers, are a-plane layers and the non-polar plane is an a-plane.
[claim14]
14. The device of claim 11, wherein the non-polar III-nitride layers, comprise GaN.
[claim15]
15. The device of claim 11, wherein the non-polar Group III-nitride layers are grown on a substrate and the substrate contains a dissimilar material to the non-polar Group III-nitride layers.
[claim16]
16. The device of claim 11, wherein the non-polar Group-III nitride layers are grown on free-standing gallium nitride (GaN), aluminum nitride (AIN), or aluminum gallium nitride (AIGaN).
[claim17]
17. The device of claim 11, wherein the non-polar Group-III nitride layers form different Group-III-nitride films.
[claim18]
18. The device of claim 11, wherein: the top surface has pits decorating threading dislocation terminations and a pit density of no more than 2 * 109 cm-2 to 9 * 109 cm-2, and
the top surface has a root mean square roughness, as grown, below 2 nanometers over a sampling area of at least 10-20 by 10-20 micrometers.
[claim19]
19. The method of claim 1, wherein the non-polar Group-III nitride layers form different Group-III-nitride films.
[claim20]
20. The method of claim 1, wherein: the top surface has pits decorating threading dislocation terminations and a pit density of no more than 2 * 109 cm-2 to 9 * 109 cm-2, and
the top surface has a root mean square roughness, as grown, below 2 nanometers over a sampling area of at least 10-20 by 10-20 micrometers.
[claim21]
21. The method of claim 1, wherein the growing is by Hydride Vapor Phase Epitaxy (HVPE).
[claim22]
22. The method of claim 1, further comprising growing the non-polar Group III nitride layers at a growth rate greater than 200 micrometers per hour.
  • Inventor, and Inventor/Applicant
  • HASKELL BENJAMIN A
  • FINI PAUL T
  • MATSUDA SHIGEMASA
  • CRAVEN MICHAEL D
  • DENBAARS STEVEN P
  • SPECK JAMES S
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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