Growth of planar, non-polar, group-III nitride films
| Foreign code | F110003754 |
|---|---|
| File No. | E06701US1 |
| Posted date | Jul 4, 2011 |
| Country | United States of America |
| Application number | 20740708 |
| Gazette No. | 20090001519 |
| Gazette No. | 8450192 |
| Date of filing | Sep 9, 2008 |
| Gazette Date | Jan 1, 2009 |
| Gazette Date | May 28, 2013 |
| International application number | US2003021916 |
| International publication number | WO2004061969 |
| Date of international filing | Jul 15, 2003 |
| Date of international publication | Jul 22, 2004 |
| Priority data |
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| Title |
Growth of planar, non-polar, group-III nitride films
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| Abstract |
(US8450192) Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of growth techniques. |
| Scope of claims |
[claim1] 1. A method for fabricating Group-III nitride, comprising: growing one or more non-polar Group-III nitride layers on a surface of a substrate using vapor phase epitaxy, including; (a) transporting a Group III-source to the surface of the substrate using one or more carrier gates, wherein the Group III source reacts with a nitrogen precursor at a surface of the substrate to grow the non-polar Group-III nitride layers, (b) selecting one or more growth pressures, the one or more carrier gases, one or more growth temperatures, and one or more gas velocities, wherein; the non-polar Group-III nitride layers have a grown top surface that is planar and a non-polar plane, with a root mean square roughness, as grown, below 0.8 nanometers over a sampling area of at least 2 by 2 micrometers, and the non-polar Group III-nitride layers comprise a laser diode, light emitting diode, or transistor structure. [claim2] 2. The method of claim 1, wherein the substrate, or a film between the substrate and the non-polar Group III-nitride layers, contains a dissimilar material to the non-polar Group III-nitride layers. [claim3] 3. The method of claim 1, wherein the substrate is free-standing gallium nitride (GaN), aluminum nitride (AIN), or aluminum gallium nitride (AlGaN). [claim4] 4. The method of claim 1, wherein the substrate is coated with a nucleation layer or a film of gallium nitride (GaN), aluminum nitride (AlN), or aluminum gallium nitride (AlGaN) and the non-polar Group-III nitride layers are grown on the film or the nucleation layer. [claim5] 5. The method of claim 1, wherein; the non-polar Group-III nitride layers' top surface is grown using a fraction of hydrogen (H2) in the carrier gases, and the non-polar Group-III nitride layers' top surface is grown using a reduced reactor pressure below atmospheric pressure. [claim6] 6. A Group-III nitride film or substrate fabricated using the method of claim 1. [claim7] 7. The method of claim 1, wherein the top surface is an a-plane. [claim8] 8. The method of claim 1, wherein the non-polar Group-III nitride layers have a thickness that is sufficient to form a free-standing substrate. [claim9] 9. The method of claim 1, wherein the non-polar Group-III nitride layers have a thickness of at least 200 micrometers. [claim10] 10. The method of claim 1, wherein the non-polar Group-III nitride layers are GaN layers. [claim11] 11. A device, comprising; one or more non-polar III-nitride layers having a top surface that is a planar and a non-polar plane, as grown, wherein; the top surface has a root mean square roughness, as grown, below 0.8 nanometers over a sampling area of at least 2 by 2 micrometers, and the non-polar Group III-nitride layers comprise a laser diode, light emitting diode, or transistor structure. [claim12] 12. The device of claim 11, wherein the non-polar III-nitride layers have a thickness of at least 200 micrometers. [claim13] 13. The device of claim 11, wherein the non-polar III-nitride layers, are a-plane layers and the non-polar plane is an a-plane. [claim14] 14. The device of claim 11, wherein the non-polar III-nitride layers, comprise GaN. [claim15] 15. The device of claim 11, wherein the non-polar Group III-nitride layers are grown on a substrate and the substrate contains a dissimilar material to the non-polar Group III-nitride layers. [claim16] 16. The device of claim 11, wherein the non-polar Group-III nitride layers are grown on free-standing gallium nitride (GaN), aluminum nitride (AIN), or aluminum gallium nitride (AIGaN). [claim17] 17. The device of claim 11, wherein the non-polar Group-III nitride layers form different Group-III-nitride films. [claim18] 18. The device of claim 11, wherein: the top surface has pits decorating threading dislocation terminations and a pit density of no more than 2 * 109 cm-2 to 9 * 109 cm-2, and the top surface has a root mean square roughness, as grown, below 2 nanometers over a sampling area of at least 10-20 by 10-20 micrometers. [claim19] 19. The method of claim 1, wherein the non-polar Group-III nitride layers form different Group-III-nitride films. [claim20] 20. The method of claim 1, wherein: the top surface has pits decorating threading dislocation terminations and a pit density of no more than 2 * 109 cm-2 to 9 * 109 cm-2, and the top surface has a root mean square roughness, as grown, below 2 nanometers over a sampling area of at least 10-20 by 10-20 micrometers. [claim21] 21. The method of claim 1, wherein the growing is by Hydride Vapor Phase Epitaxy (HVPE). [claim22] 22. The method of claim 1, further comprising growing the non-polar Group III nitride layers at a growth rate greater than 200 micrometers per hour. |
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| IPC(International Patent Classification) | |
| Reference ( R and D project ) | ERATO NAKAMURA Inhomogeneous Crystal AREA |
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