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Growth of reduced dislocation density non-polar gallium nitride achieved

Foreign code F110003755
File No. E06702US2
Posted date Jul 4, 2011
Country United States of America
Application number 67033207
Gazette No. 20070126023
Gazette No. 7847293
Date of filing Feb 1, 2007
Gazette Date Jun 7, 2007
Gazette Date Dec 7, 2010
International application number US2003021918
International publication number WO2004061909
Date of international filing Jul 15, 2003
Date of international publication Jul 22, 2004
Priority data
  • 2002US-60433843 (Dec 16, 2002) US
  • 2002US-60433844 (Dec 16, 2002) US
  • 2003WO-US21918 (Jul 15, 2003) WO
  • 2005US-10537644 (Jun 6, 2005) US
Title Growth of reduced dislocation density non-polar gallium nitride achieved
Abstract (US7847293)
Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.
Scope of claims [claim1]
1. A method of performing a lateral epitaxial overgrowth of a planar and non-polar gallium nitride (GaN) film, comprising: (a) patterning a mask deposited on a substrate; and
(b) performing a lateral epitaxial overgrowth of the planar and non-polar GaN film off the substrate, wherein the planar and non-polar GaN film nucleates only on portions of the substrate not covered by the patterned mask, the planar and non-polar GaN film grows vertically through openings in the patterned mask, and the planar and non-polar GaN film then spreads laterally above the patterned mask and across the substrate's surface resulting in a top surface that is planar and non-polar GaN.
[claim2]
2. The method of claim 1, wherein the planar and non-polar GaN film is a coalesced planar and non-polar GaN film.
[claim3]
3. The method of claim 1, wherein the planar and non-polar GaN film is an uncoalesced planar and non-polar GaN film.
[claim4]
4. A device manufactured using the method of claim 1.
[claim5]
5. A lateral epitaxial overgrowth of a planar and non-polar gallium nitride (GaN) film off a substrate, wherein the lateral epitaxial overgrowth is created using a process comprising: (a) patterning a dielectric mask deposited on a substrate; and
(b) performing a lateral epitaxial overgrowth of the planar and non-polar GaN film off the substrate, wherein the planar and non-polar GaN film nucleates only on portions of the substrate exposed by the patterned dielectric mask, the planar and non-polar GaN film grows vertically through openings in the patterned dielectric mask, and the planar and non-polar GaN film then spreads laterally above the patterned dielectric mask and across the substrate's surface resulting in a top surface that is planar and non-polar GaN.
[claim6]
6. The process of claim 5, wherein the planar and non-polar GaN film is a coalesced planar and non-polar GaN film.
[claim7]
7. The process of claim 5, wherein the planar and non-polar GaN film is an uncoalesced planar and non-polar GaN film.
[claim8]
8. A device including a lateral epitaxial overgrowth of a planar and non-polar gallium nitride (GaN) film having a top surface that is planar and non-polar GaN.
[claim9]
9. The device of claim 8, wherein the device is light-emitting diode, a laser diode or a transistor.
  • Inventor, and Inventor/Applicant
  • HASKELL BENJAMIN A
  • CRAVEN MICHAEL D
  • FINI PAUL T
  • DENBAARS STEVEN P
  • SPECK JAMES S
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • UNIVERSITY OF CALIFORNIA
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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