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Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy 実績あり

外国特許コード F110003760
整理番号 E06707US
掲載日 2011年7月4日
出願国 アメリカ合衆国
出願番号 14089305
公報番号 20050245095
公報番号 7208393
出願日 平成15年7月15日(2003.7.15)
公報発行日 平成17年11月3日(2005.11.3)
公報発行日 平成19年4月24日(2007.4.24)
国際出願番号 US2003021918
国際公開番号 WO2004061909
国際出願日 平成15年7月15日(2003.7.15)
国際公開日 平成16年7月22日(2004.7.22)
優先権データ
  • 2002US-60372909 (2002.4.15) US
  • 2002US-60433843 (2002.12.16) US
  • 2002US-60433844 (2002.12.16) US
  • 2003US-10413690 (2003.4.15) US
  • 2003US-10413691 (2003.4.15) US
  • 2003US-10413913 (2003.4.15) US
  • 2003WO-US21916 (2003.7.15) WO
  • 2003WO-US21918 (2003.7.15) WO
  • 2003WO-US39355 (2003.12.11) WO
  • 2004US-60569749 (2004.5.10) US
  • 2004US-60576685 (2004.6.3) US
発明の名称 (英語) Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy 実績あり
発明の概要(英語) (US7208393)
A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films.
The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique.
High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.
特許請求の範囲(英語) [claim1]
1. A method of growing planar m-plane gallium nitride (GaN) films, comprising:
(a) performing a direct growth of a planar m-plane GaN film by hydride vapor phase epitaxy;
and(b) performing a lateral epitaxial overgrowth (LEO) off of a surface of the direct growth resulting in a top surface that is a planar m-plane GaN film.
[claim2]
2. The method of claim 1, wherein the planar m-plane GaN film is produced for use as a substrate for polarization-free device growth.
[claim3]
3. The method of claim 1, wherein the direct growth of the planar m-plane GaN film is performed on a substrate comprising m-plane SiC, (100)gamma -LiAlO2, or a substrate covered by an m-plane (In,Al,Ga,B)N template layer.
[claim4]
4. The method of claim 1, wherein the performing step (a) further comprises:
(1) loading a substrate into a reactor;(2) heating the reactor to a growth temperature, with a mixture of ammonia (NH3), hydrogen (H2) and nitrogen (H2) flowing into a growth chamber;(3) reducing the reactor's pressure to a desired deposition pressure, wherein the desired deposition pressure is below atmospheric pressure;(4) initiating a gaseous hydrogen chloride (HCl) flow to a gallium (Ga) source to begin growth of the planar m-plane GaN film directly on the substrate, wherein the gaseous HCl reacts with the Ga to form gallium monochloride (GaCl);(5) transporting the GaCl to the substrate using a carrier gas that includes at least a fraction of hydrogen (H2), wherein the GaCl reacts with ammonia (NH3) at the substrate to form the planar m-plane GaN film;
and(6) after a desired growth time has elapsed, interrupting the gaseous HCl flow, returning the reactor's pressure to atmospheric pressure, and reducing the reactor's temperature to room temperature.
[claim5]
5. The method of claim 4, wherein the substrate is coated wit a nucleation layer deposited either at low temperatures or at the growth temperature.
[claim6]
6. The method of claim 4, further comprising nitridating the substrate by adding anhydrous ammonia (NH3) to a gas stream in the reactor.
[claim7]
7. The method of claim 4, wherein the interrupting step (6) further comprises including anhydrous ammonia (NH3) in a gas stream to prevent decomposition of the GaN film during the reduction of the reactor's temperature.
[claim8]
8. The method of claim 4, wherein the interrupting step (6) further comprises cooling the substrate at a reduced pressure.
[claim9]
9. The method of claim 1, wherein the performing step (b) further comprises:
(1) patterning a mask deposited on the surface of the direct growth;
and(2) performing a lateral epitaxial overgrowth off the surface of the direct growth using hydride vapor phase epitaxy, wherein GaN nucleates only on portions of the surface of the direct growth not covered by the patterned mask, the GaN grows vertically through openings in the patterned mask, and the GaN then spreads laterally above the patterned mask and across the surface of the direct growth.
[claim10]
10. The method of claim 9, wherein the lateral epitaxial overgrowth utilizes growth pressures of approximately atmospheric pressure or below, and a carrier gas containing a fraction of hydrogen.
[claim11]
11. The method of claim 10, wherein the carrier gas is predominantly hydrogen.
[claim12]
12. The method of claim 11, wherein the carrier gas comprises a mixture of hydrogen and nitrogen, argon, or helium.
[claim13]
13. The method of claim 9, wherein the lateral epitaxial overgrowth reduces threading dislocations and defect densities in the planar m-plane GaN film.
[claim14]
14. The method of claim 9, wherein the patterned mask is comprised of a metallic material or a dielectric material.
[claim15]
15. The method of claim 9, wherein the patterning step comprises: depositing a silicon dioxide (SiC2) film on the surface of the direct growth;
patterning a photoresist layer on the silicon dioxide film;etching away any portions of the silicon dioxide film exposed by the patterned photoresist layer;removing remaining portions of the photoresist layer;
and
cleaning the surface of the direct growth.
[claim16]
16. The method of claim 9, wherein the surface of the direct growth is coated with a nucleation layer deposited at either low temperatures or at the growth temperature.
[claim17]
17. The method of claim 1, wherein the lateral epitaxial overgrowth comprises:
(1) etching pillars or stripes out of the surface of the direct growth;
and(2) growing laterally from the pillars or stripes.
[claim18]
18. The method of claim 1, wherein the lateral epitaxial overgrowth comprises:
(1) etching pillars or stripes out of the surface of the direct growth;(2) masking an upper surface of the pillars or stripes;
and(3) growing laterally from exposed portions of the masked upper surface of the pillars or stripes.
[claim19]
19. A device manufactured using the method of claim 1.
  • 発明者/出願人(英語)
  • HASKELL BENJAMIN A
  • MCLAURIN MELVIN B
  • DENBAARS STEVEN P
  • SPECK JAMES STEPHEN
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO NAKAMURA Inhomogeneous Crystal AREA
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