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Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy 実績あり

外国特許コード F110003761
整理番号 E06707US2
掲載日 2011年7月4日
出願国 アメリカ合衆国
出願番号 69745707
公報番号 20070184637
公報番号 7956360
出願日 平成19年4月6日(2007.4.6)
公報発行日 平成19年8月9日(2007.8.9)
公報発行日 平成23年6月7日(2011.6.7)
優先権データ
  • 2004US-60576685 (2004.6.3) US
  • 2005US-11140893 (2005.5.31) US
発明の名称 (英語) Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy 実績あり
発明の概要(英語) (US7956360)
A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films.
The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique.
High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.
特許請求の範囲(英語) [claim1]
1. A device having a structure that includes a lateral epitaxial overgrowth layer grown in a non-polar direction and having a top surface that is non-polar, the lateral epitaxial overgrowth layer comprising a non-polar III-nitride film with a reduction in dislocation density as compared to III-nitride films grown heteroepitaxially containing dislocation densities in excess of 108 cm-2.
[claim2]
2. The device of claim 1, wherein the device is a spontaneous and piezoelectric polarization-free device.
[claim3]
3. The device of claim 1, wherein the lateral epitaxial overgrowth layer resides on a surface of a direct growth layer, the direct growth layer comprising a III-nitride film.
[claim4]
4. The device of claim 1, wherein the non-polar III-nitride film is a planar film.
[claim5]
5. The device of claim 1, wherein the non-polar III-nitride film is an m-plane gallium nitride (GaN) film.
[claim6]
6. The device of claim 1, wherein the non-polar III-nitride film contains dislocation densities less than 108 cm-2.
[claim7]
7. The device of claim 1, wherein the device is a laser diode, light-emitting diode or transistor.
  • 発明者/出願人(英語)
  • HASKELL BENJAMIN A
  • MCLAURIN MELVIN B
  • DENBAARS STEVEN P
  • SPECK JAMES STEPHEN
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO NAKAMURA Inhomogeneous Crystal AREA
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