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Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy achieved

Foreign code F110003761
File No. E06707US2
Posted date Jul 4, 2011
Country United States of America
Application number 69745707
Gazette No. 20070184637
Gazette No. 7956360
Date of filing Apr 6, 2007
Gazette Date Aug 9, 2007
Gazette Date Jun 7, 2011
Priority data
  • 2004US-60576685 (Jun 3, 2004) US
  • 2005US-11140893 (May 31, 2005) US
Title Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy achieved
Abstract (US7956360)
A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films.
The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique.
High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.
Scope of claims [claim1]
1. A device having a structure that includes a lateral epitaxial overgrowth layer grown in a non-polar direction and having a top surface that is non-polar, the lateral epitaxial overgrowth layer comprising a non-polar III-nitride film with a reduction in dislocation density as compared to III-nitride films grown heteroepitaxially containing dislocation densities in excess of 108 cm-2.
[claim2]
2. The device of claim 1, wherein the device is a spontaneous and piezoelectric polarization-free device.
[claim3]
3. The device of claim 1, wherein the lateral epitaxial overgrowth layer resides on a surface of a direct growth layer, the direct growth layer comprising a III-nitride film.
[claim4]
4. The device of claim 1, wherein the non-polar III-nitride film is a planar film.
[claim5]
5. The device of claim 1, wherein the non-polar III-nitride film is an m-plane gallium nitride (GaN) film.
[claim6]
6. The device of claim 1, wherein the non-polar III-nitride film contains dislocation densities less than 108 cm-2.
[claim7]
7. The device of claim 1, wherein the device is a laser diode, light-emitting diode or transistor.
  • Inventor, and Inventor/Applicant
  • HASKELL BENJAMIN A
  • MCLAURIN MELVIN B
  • DENBAARS STEVEN P
  • SPECK JAMES STEPHEN
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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