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Technique for the growth of planar semi-polar gallium nitride 実績あり

外国特許コード F110003762
整理番号 E06712US1
掲載日 2011年7月4日
出願国 アメリカ合衆国
出願番号 37291406
公報番号 20060205199
公報番号 7220324
出願日 平成18年3月10日(2006.3.10)
公報発行日 平成18年9月14日(2006.9.14)
公報発行日 平成19年5月22日(2007.5.22)
優先権データ
  • 2005US-60660283 (2005.3.10) US
発明の名称 (英語) Technique for the growth of planar semi-polar gallium nitride 実績あり
発明の概要(英語) (US7220324)
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface.
The planar films and substrates are: (1) {10 <O OSTYLE="SINGLE">11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 <O OSTYLE="SINGLE">13} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 <O OSTYLE="SINGLE">22} gallium nitride (GaN) grown on a {1 <O OSTYLE="SINGLE">100} sapphire substrate, and (4) {10 <O OSTYLE="SINGLE">13} gallium nitride (GaN) grown on a {1 <O OSTYLE="SINGLE">100} sapphire substrate.
特許請求の範囲(英語) [claim1]
1. A method for growing a nitride film, comprising: growing a planar, semi-polar nitride film on a substrate, wherein the planar, semi-polar nitride film is grown parallel to the substrate's surface.
[claim2]
2. The method of claim 1, wherein a surface area of the planar, semi-polar nitride film of at least 10 mm * 10 mm is parallel to the substrate's surface.
[claim3]
3. The method of claim 1, wherein a surface area of the planar, semi-polar nitride film having at least a 2 inch diameter is parallel to the substrate's surface.
[claim4]
4. The method of claim 1, wherein the planar, semi-polar nitride film is {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions.
[claim5]
5. The method of claim 4, wherein the specific directions comprise <001>, <010> and <011>.
[claim6]
6. The method of claim 1, wherein the planar, semi-polar nitride film is {10 11} AlN, InN, AlGaN, InGaN, or AlInN grown on a (100) spinel substrate miscut in specific directions.
[claim7]
7. The method of claim 6, wherein the specific directions comprise <001>, <010> and <011>.
[claim8]
8. The method of claim 1, wherein the planar, semi-polar nitride film is {10 13} gallium nitride (GaN) grown on a {110} spinel substrate.
[claim9]
9. The method of claim 1, wherein the planar, semi-polar nitride film is {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate.
[claim10]
10. The method of claim 1, wherein the planar, semi-polar nitride film is {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate.
[claim11]
11. The method of claim 1, further comprising the steps of: loading the substrate into a reactor, wherein the reactor is evacuated to remove oxygen, and then backfilled with nitrogen;
turning on a furnace and ramping a temperature of the reactor under conditions that encourage nitridization of the substrate's surface;performing a gas flow of nitrogen, hydrogen, or ammonia over the substrate at atmospheric pressure;reducing the reactor's pressure when the furnace reaches a setpoint temperature;performing a gallium nitride (GaN) growth on the substrate, after the reactor's pressure is reduced, by flowing ammonia, and initiating a flow of hydrogen chloride (HCl) over gallium (Ga) to start the growth of the GaN;
and
cooling down the reactor after the growth of the GaN, wherein the HCl flow is stopped, and the reactor is cooled down while flowing ammonia to preserve the GaN.
[claim12]
12. The method of claim 11, wherein the substrate is miscut before being loaded into the reactor.
[claim13]
13. The method of claim 11, wherein, for growth of {11 22} GaN, ammonia is flowed while the furnace is ramping to the growth temperature, so that nitridation occurs at low temperature.
[claim14]
14. The method of claim 11, wherein, for growth of {10 13} GaN, only hydrogen and nitrogen are flowed during the temperature ramping step, and the substrate is then subjected to a high temperature nitridation with ammonia flow at the growth temperature.
[claim15]
15. The method of claim 1, further comprising, after the planar, semi-polar nitride film has been grown, growing one or more device layers on the on the planar, semi-polar nitride film.
[claim16]
16. The method of claim 15, wherein the step of growing the device layers on the planar, semi-polar nitride film includes doping the device layers with n-type and p-type dopants, and growing one or more quantum wells in a regrowth layer.
[claim17]
17. The method of claim 16, further comprising fabricating a light emitting diode from the device layers.
[claim18]
18. A planar, semi-polar nitride film grown using the method of claim 1.
  • 発明者/出願人(英語)
  • BAKER TROY J
  • HASKELL BENJAMIN A
  • FINI PAUL T
  • DENBAARS STEVEN P
  • SPECK JAMES S
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO NAKAMURA Inhomogeneous Crystal AREA
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